Diodes ZXTP08400BFF User Manual

ZXTP08400BFF

C
E
B

400V, SOT23F, PNP medium power high voltage transistor

Summary;

BV
BV
I
V
P
Complementary part number ZXTN08400BFF
CEO
ECO
C(cont)
CE(sat)
= 1.5W
D
> -400V
= -0.2A
< 220mV @ 100mA

Description

This PNP transistor has been designed for applications requiring high blocking voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.

Features

High voltage
Low saturation voltage

Applications

Telecoms switching
E
C

Ordering information

Device Reel size
(inches)
ZXTP08400BFFTA 7 8 3000
Tape width
(mm)
Quantity
per reel
Pinout - top view

Device marking

1D6
Issue 2 - August 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
B
ZXTP08400BFF

Absolute maximum ratings

Parameter Symbol Limit Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-collector voltage (reverse blocking) V
Emitter-base voltage V
Continuous collector current
(c)
Peak pulse current I
Base current I
Power dissipation at T
amb
=25°C
(a)
Linear derating factor P
Power dissipation at T
amb
=25°C
(b)
Linear derating factor P
Power dissipation at T
amb
=25°C
(c)
Linear derating factor P
Power dissipation at T
amb
=25°C
(d)
Linear derating factor P
Operating and storage temperature range T
j
CBO
CEO
ECO
EBO
I
C
CM
B
, T
D
D
D
D
stg
-400 V
-400 V
-6 V
-7 V
-0.2 A
-1 A
-0.2 A
0.84 W
6.72 mW/°C
1.34 W
10.72 mW/°C
1.50 W
12.0 mW/°C
2.0 W
16.0 mW/°C
-55 to 150 °C

Thermal resistamce

Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs.
(a)
(b)
(c)
(d)
R
R
R
R
JA
JA
JA
JA
149 °C/W
93 °C/W
83 °C/W
60 °C/W
Issue 2 - August 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007

Characteristics

ZXTP08400BFF
Issue 2 - August 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
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