Page 1
ZXTN2020F
100V, SOT23, NPN medium power transistor
Summary
V
(BR)CEV
I
C(cont)
R
CE(sat)
V
CE(sat)
P
D
Complementary part number: ZXTP2029F
> 160V, V
= 4A
= 30m⍀ typical
< 50mV @ 1A
= 1.2W
(BR)CEO
> 100V
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
• Higher power dissipation SOT23 package
• High peak current
• Low saturation voltage
• 160V forward blocking voltage
Applications
• MOSFET and IGBT gate driving
• Motor drive
• Relay, lamp and solenoid drive
Ordering information
Device Reel size
(inches)
ZXTN2020FTA 7 8 3,000
Tape width
(mm)
Quantity per reel
Pinout - top view
Device marking
853
Issue 4 - January 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
Page 2
ZXTN2020F
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage V
Collector-emitter voltage V
(BR)CEV
Collector-emitter voltage V
Emitter-base voltage V
Peak pulse current I
Continuous collector current
(a)
Base current I
Power dissipation @ T
A
=25oC
(a)
Linear derating factor
Power dissipation @ T
A
=25oC
(b)
Linear derating factor
Power dissipation @ T
A
=25oC
(c)
Linear derating factor
Operating and storage temperature T
CBO
CEO
EBO
CM
I
C
B
P
D
P
D
P
D
j:Tstg
160 V
160 V
100 V
7V
12 A
4A
1A
1.0
8
mW/
1.2
9.6
mW/
1.56
12.5
mW/
-55 to +150
W
W
W
o
o
C
o
C
o
C
C
Thermal resistance
Parameter Symbol Value Unit
Junction to ambient
Junction to ambient
Junction to ambient
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(c) as (b) above measured at t<5secs.
(a)
(b)
(c)
Rθ
Rθ
Rθ
JA
JA
JA
125
104
80
o
C/W
o
C/W
o
C/W
Issue 4 - January 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Page 3
Characteristics
ZXTN2020F
Issue 4 - January 2006 3 www.zetex.com
© Zetex Semiconductors plc 2006
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ZXTN2020F
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
V
(BR)CBO
160 200 V IC=100µA
voltage
Collector-emitter breakdown
V
(BR)CEV
160 200 V
IC =1µA, -1V< VBE<+0.3V
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
V
(BR)CEO
V
(BR)EBO
100 115 V
=10mA
I
C
78 VIE=100µA
voltage
Collector-emitter cut-off
current
Collector-base cut-off
I
CEV
I
CBO
<1 20 nA V
V
CES
BE
=128V,
= -1V
<1 20 nA VCB=128V
current
Emitter-base cut-off current I
Static forward current
transfer ratio
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Base-emitter turn-on voltage V
Transition frequency f
EBO
H
FE
V
CE(sat)
V
BE(sat)
BE(on)
T
100
100
35
<1 10 nA VEB=6V
220
200
300
60
13
20
40
85
120
30
50
105
150
mV
mV
mV
mV
0.94 1.05 V
0.84 0.94 V
I
=10mA, VCE=2V
C
IC=1A, VCE=2V
IC=4A, VCE=2V
IC=10A, VCE=2V
I
=0.1A, IB=5mA
C
IC=1A, IB=100mA
IC=2A, IB=100mA
IC=4A, IB=400mA
=4A, IB=400mA
I
C
=4A, VCE=2V
I
C
130 MHz Ic=100mA, VCE=10V,
f=50MHz
Output capacitance C
Tur n –o n ti m e t
Turn-off time t
obo
(on)
(off)
22 pF VCB=10V, f=1MHz
37 ns VCC=10V, IC=1A,
910 ns IB1=IB2=100mA
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300
S. Duty cycle ⱕ2%.
Issue 4 - January 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Page 5
Typical characteristics
ZXTN2020F
Issue 4 - January 2006 5 www.zetex.com
© Zetex Semiconductors plc 2006
Page 6
Packaging details - SOT23
L
N
ZXTN2020F
H
D
G
3 leads
M
B
A
C
K
F
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Max. Max.
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM - - - - -
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
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D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
For international sales offices visit www.zetex.com/offices
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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
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Corporate Headquarters
Zetex Semiconductors plc
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United Kingdom
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[email protected]
Issue 4 - January 2006 6 www.zetex.com
© Zetex Semiconductors plc 2006
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