Diodes ZXTD617MC User Manual

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DUAL 15V NPN LOW SATURATION TRANSISTORS
Features and Benefits
• BV
• I
• Low Saturation Voltage (100mV max @ 1A)
• R
• h
• Dual NPN saving footprint and component count
• Low profile 0.8mm high package for thin applications
• R
• 6mm
• Lead-Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Top View
> 15V
CEO
= 4.5A Continuous Collector Current
C
= 45 mΩ for a Low Equivalent On-Resistance
SAT
specified up to 12A for high current gain hold up
FE
efficient, 40% lower than SOT26
θJA
2
footprint, 50% smaller than TSOP6 and SOT26
DFN3020B-8
Bottom View
B2
NPN Transistor
Mechanical Data
• Case: DFN3020B-8
• Case Material: Molded Plastic. “Green” Molding Compound.
• Terminals: Pre-Plated NiPdAu leadframe
• UL Flammability Rating 94V-0
• Nominal Package Height: 0.8mm
• Moisture Sensitivity: Level 1 per J-STD-020
• Weight: 0.013 grams (approximate)
Applications
• DC-DC Converters
• Charging circuits
• Motor control
• Power switches
• Portable applications
C
B1
E2
NPN Transistor
Equivalent Circuit
Diodes Incorporated
C
C2 C2 C1 C1
C2
E2 B2 E1 B1
ZXTD617MC
C1
Pin 1
Bottom View
Pin-Out
Ordering Information
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTD617MCTA DAA 7 8 3000
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
DAA
ZXTD617MC
Document Number DS31930 Rev. 3 - 2
DAA = Product type marking code Top view, dot denotes pin 1
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ZXTD617MC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current
Continuous Collector Current Base Current
V
CBO
V
CEO
V
EBO
I (Notes 3 & 6) (Notes 4 & 6) 5
CM
I
I
C
B
40 15
7
15
4.5
1
V
A
Thermal Characteristics @ T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
1.5 12
2.45
19.6
1.13 8
1.7
13.6
83.3
W
mW/°C
°C/W
Power Dissipation Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Notes 3 & 6) (Notes 4 & 6)
P
D
(Notes 5 & 6) (Notes 5 & 7)
(Notes 3 & 6) (Notes 4 & 6) 51.0 (Notes 5 & 6) 111
R
JA
θ
(Notes 5 & 7) 73.5 Thermal Resistance, Junction to Lead (Notes 6 & 8) Operating and Storage Temperature Range
Notes: 3. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
4. Same as note (3), except the device is measured at t <5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm
6. For a dual device with one active die.
7. For dual device with 2 active die running at equal power.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
R
JL
, T
T
J
STG
2
) FR4 PCB with high coverage of single sided 1oz copper.
17.1
-55 to +150
°C
ZXTD617MC
Document Number DS31930 Rev. 3 - 2
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Thermal Characteristics
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ZXTD617MC
V
CE(SAT)
10
Limited
0.01
Collector Current (A)
C
I
1
0.1
DC
8sqcm 2oz Cu One active die
Single Pulse, T
1s
100ms
=25°C
amb
10ms
1ms
100us
0.1 1 10
VCE Collector-Emitter Voltage (V)
Safe Operating A rea
8sqcm 2oz Cu
80
One active die
60
D=0.5
40
D=0.2
20
Thermal Resistance (°C/W)
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impeda nc e
2.0
10sqcm 1oz Cu Two active die
1.5
1.0
8sqcm 2oz Cu One a ctive die
10sqcm 1oz Cu One a ctive die
0.5
0.0 0 25 50 75 100 125 150
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
225 200 175 150
1oz Cu One active die
1oz Cu Two active die
125 100
75 50 25
Thermal Resistance (°C/W)
2oz Cu One active die
0
0.1 1 10 100
2oz Cu Two active die
Board Cu Area (sqcm)
Thermal Resistance v B o ard A rea
3.5
3.0
2.5
2.0
T
=25°C
amb
T
=150°C
j max
Continuous
2oz Cu One active die
2oz Cu Two active die
1.5
1.0
Dissipation (W)
D
0.5
P
0.0
0.1 1 10 100
1oz Cu One active die
1oz Cu Two active die
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTD617MC
Document Number DS31930 Rev. 3 - 2
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ZXTD617MC
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9) Base-Emitter Saturation Voltage (Note 9) Output Capacitance
Transition Frequency Turn-on Time
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
BV BV BV
I
CBO
I
EBO
I
CES
h
V
CE(sat)
V
BE(on
V
BE(sat
C
f
t t
CBO CEO EBO
FE
obo
T
on off
40 70 - V 15 18 - V
7 8.2 - V
- - 100 nA
- - 100 nA
- - 100 nA
200 300 200 150
-
-
-
-
-
-
415 450 320 240
80
8
70 165 240 200
-
-
-
-
-
14 100 200 310
-
-
-
-
-
-
mV mV mV mV mV
- 0.88 0.96 V
- 0.94 1.05 V
- 30 40 pF
80 120 - MHz
- 120 - ns
- 160 - ns
IC = 100µA IC = 10mA IE = 100µA V
= 30V
CB
V
= 6V
EB
V
= 12V
CES
I
= 10mA, V
C
= 200mA, V
I
C
I
= 3A, V
C
= 5A, V
I
C
I
= 12A, VCE= 2V
C
I
=0.1A, IB = 10mA
C
= 1A, IB = 10mA
I
C
I
= 3A, IB = 50mA
C
=4.5A, IB = 50mA
I
C
I
=4.5A, IB= 100mA
C
CE CE
CE
CE
= 2V = 2V
= 2V
= 2V
IC = 4.5A, VCE= 2V IC = 4.5A, IB= 50mA V
= 10V. f = 1MHz
CB
V
= 10V, IC = 50mA,
CE
f = 100MHz
= 10V, IC = 1A
V
CC
I
= IB2 = 10mA Turn-off Time
B1
ZXTD617MC
Document Number DS31930 Rev. 3 - 2
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Typical Electrical Characteristics
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Diodes Incorporated
ZXTD617MC
1
Tamb=25°C
100m
(V)
V
10m
CE(SAT)
1m
IC/IB=100
IC/IB=50
IC/IB=10
1m 10m 100m 1 10
IC Colle c to r C urrent (A)
V
CE(SAT)
1.2
1.0
0.8
0.6
0.4
Normalised Gain
0.2
0.0 1m 10m 100m 1 10
100°C
25°C
-55°C
v I
C
VCE=2V
IC Collector Current (A)
hFE v I
C
630 540 450 360 270 180 90 0
0.25
IC/IB=50
0.20
0.15
100°C
(V)
0.10
CE(SAT)
V
0.05
0.00 1m 10m 100m 1 10
25°C
-55°C
IC Colle c to r C urrent (A)
1.0
IC/IB=50
V
CE(SAT)
v I
C
)
FE
0.8
(V)
0.6
BE(SAT)
V
Typical Gain (h
0.4
1m 10m 100m 1 10
-55°C
25°C
100°C
IC Colle c to r C urrent (A)
V
BE(SAT)
v I
C
VCE=2V
1.0
0.8
(V)
0.6
BE(ON)
V
0.4
0.2
-55°C
25°C
100°C
1m 10m 100m 1 10
IC Colle c to r C urrent (A)
V
ZXTD617MC
Document Number DS31930 Rev. 3 - 2
BE(ON)
v I
C
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ZXTD617MC
Package Outline Dimensions
A
A1
D
D4
E
L
D2
b
Z
D4
E2
e
A3
DFN3020B-8
Dim Min Max Typ
A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 - - 0.15
b 0.25 0.35 0.30
D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11
e - - 0.65
E 1.95 2.075 2.00 E2 0.43 0.63 0.53
L 0.25 0.35 0.30
Z - - 0.375
All Dimensions in mm
Suggested Pad Layout
G
ZXTD617MC
Document Number DS31930 Rev. 3 - 2
C
Y2
G1
X
X1
Y1
Y
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Dimensions
C 0.650 G 0.285
G1 0.090
X 0.400
X1 1.120
Y 0.730 Y1 0.500 Y2 0.365
Value (in mm)
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporat ed does not assume an y liabi lity arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support devic e or s ystem whose failure to p erfo rm can be re asonabl y e xpected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices­or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorpor ated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
Diodes Incorporated
ZXTD617MC
ZXTD617MC
Document Number DS31930 Rev. 3 - 2
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