Diodes ZXTC6720MC User Manual

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DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION

Features and Benefits

NPN Transistor

• BV

• I

• Low Saturation Voltage (185mV max @ 1A)

• R

PNP Transistor

• BV

• I

• Low Saturation Voltage (-220mV max @ -1A)

• R

• h

FE

• Low profile 0.8mm high package for thin applications

• R

θJA

• 6mm

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Top View

> 80V

CEO

= 3.5A Continuous Collector Current

C

= 68mΩ for a low equivalent On-Resistance

SAT

> -70V

CEO

= -2.5A Continuous Collector Current

C

= 117mΩ for a low equivalent On-Resistance

SAT

characterized up to -5A for high current gain hold up

efficient, 40% lower than SOT26

2

footprint, 50% smaller than TSOP6 and SOT26

DFN3020B-8

B1

Bottom View

NPN Transistor

Mechanical Data

• Case: DFN3020B-8

• Case Material: Molded Plastic. “Green” Molding Compound.

• Terminals: Pre-Plated NiPdAu leadframe.

• Nominal package height: 0.8mm

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Weight: 0.013 grams (approximate)

Applications

• DC – DC Converters

• Charging circuits

• Power switches

• Motor control

• Portable applications

C

B2

PNP Transistor

Equivalent Circuit

Diodes Incorporated

C2

C2 C2 C1 C1

2

E2 B2 E1 B1

ZXTC6720MC

C1C2

Pin 1

Bottom View

Pin Out

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTC6720MCTA DE4 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For Packaging Details, go to our website at http://www.diodes.com.

Marking Information

ZXTC6720MC

Document number: DS31929 Rev. 3 - 2

DE4

www.diodes.com

DE4 = Product type marking code Top View, Dot Denotes Pin 1

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Maximum Ratings @ T

= 25°C unless otherwise specified

A

Parameter Symbol NPN PNP Unit

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current

Continuous Collector Current Base Current

V

CBO

V

CEO

V

EBO

I (Notes 4 & 7) (Notes 5 & 7) 4 -3

CM

I

C

B

100 -70

80 -70

7 -7 5 -3

3.5 -2.5

1

V

A

Thermal Characteristics @ T

= 25°C unless otherwise specified

A

Characteristic Symbol NPN PNP Unit

1.5 12

2.45

19.6

1.13 8

1.7

13.6

83.3

W

mW/°C

°C/W

Power Dissipation Linear Derating Factor

Thermal Resistance, Junction to Ambient

(Notes 4 & 7) (Notes 5 & 7)

P

D

(Notes 6 & 7) (Notes 6 & 8)

(Notes 4 & 7) (Notes 5 & 7) 51.0 (Notes 6 & 7) 111

R

JA

θ

(Notes 6 & 8) 73.5 Thermal Resistance, Junction to Lead (Notes 7 & 9) Operating and Storage Temperature Range

Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.

5. Same as note (4), except the device is measured at t <5 sec.

6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm

7. For a dual device with one active die.

8. For dual device with 2 active die running at equal power.

9. Thermal resistance from junction to solder-point (at the end of the collector lead).

R

JL

T

, T

J

STG

2

) FR4 PCB with high coverage of single sided 1oz copper.

17.1

-55 to +150

°C

ZXTC6720MC

Document number: DS31929 Rev. 3 - 2

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Thermal Characteristics

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ZXTC6720MC

DC

1

V

0.1

Limited

Collector Current (A)

C

I

0.01

0.1 1 10 100

1s

CE(SAT)

8sqcm 2oz Cu One active die

Single Pulse, T

100ms

amb

=25°C

10ms

1ms

100us

VCE Colle c to r-Emitter Voltage (V)

NPN Safe Operating Area

8sqcm 2oz Cu

80

One active die

60

D=0.5

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Sing le Pu ls e

D=0.05

D=0.1

1

0.1

Collector Current (A)

C

0.01

-I

0.1 1 10 100

DC

V

CE(SAT)

Limited

8sqcm 2oz Cu One active die

Single Pulse, T

1s

100ms

amb

=25°C

10ms

1ms

100us

-VCE Collector-Emitter Voltage (V)

PNP Safe Operating Area

2.0

1.5

1.0

0.5

0.0 0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

10sqcm 1o z Cu Two active die

8sqcm 2oz Cu One active die

10sqcm 1oz Cu One active die

Transient Thermal Impedance

3.5

3.0

2.5

2.0

T

=25°C

amb

T

=150°C

j max

Continuous

2oz Cu One active die

2oz Cu Two active die

1.5

1.0

Dissipation (W)

D

0.5

P

0.0 100m 1 10 100

1oz Cu One active die

1oz Cu Two active die

Board Cu Area (sqcm)

Power Dissipation v Board Area

ZXTC6720MC

Document number: DS31929 Rev. 3 - 2

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225 200 175 150 125 100

75 50 25

Thermal Resistance (°C/W)

0

0.1 1 10 100

Thermal Resistance v Board Area

Derating Curve

1oz Cu One a ctive die

2oz Cu Once a ctive die

2oz Cu Two active die

Board Cu Area (sqcm)

1oz Cu Two active die

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ZXTC6720MC

Electrical Characteristics, NPN Transistor (at T

= 25°C unless otherwise specified)

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current

Static Forward Current Transfer Ratio (Note 10)

Collector-Emitter Saturation Voltage (Note 10)

Base-Emitter Turn-On Voltage (Note 10) Base-Emitter Saturation Voltage (Note 10) Output Capacitance

Transition Frequency Turn-on Time

Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

BV BV BV

I I I

V

CE(sat)

V

BE(on

V

BE(sat

C

CBO CEO

EBO CBO EBO CES

h

FE

obo

f

T

t

on

t

off

100 180 - V

80 110 - V

7 8.2 - V

- - 100 nA

- - 100 nA

- - 100 nA

200 300 110

60 20

-

450 450 170

90 30 10

15

45 145 160 240

-

900

-

20

60 185 200 340

-

mV

- 0.96 1.05 V

- 1.09 1.175 V

- 11.5 18 pF

100 160 - MHz

- 86 - ns

- 1128 - ns

IC = 100µA IC = 10mA IE = 100µA V

= 80V

CB

V

= 6V

EB

V

= 65V

CE

I

= 10mA, V

C

I

= 200mA, V

C

= 1A, VCE = 2V

I

C

I

= 1.5A, V

C

= 3A, VCE = 2V

I

C

I

= 5A, VCE= 2V

C

I

= 0.1A, IB = 10mA

C

= 0.5A, IB = 50mA

I

C

I

= 1A, IB = 20mA

C

= 1.5A, IB = 50mA

I

C

I

= 3.5A, IB= 300mA

C

CE

= 2V

IC = 3.5A, VCE= 2V IC = 3.5A, IB= 300mA V

= 10V. f = 1MHz

CB

V

= 10V, IC = 50mA,

CE

f = 100MHz V

= 10V, IC = 1A

CC

I

= IB2 = 25mA Turn-off Time

B1

ZXTC6720MC

Document number: DS31929 Rev. 3 - 2

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NPN - Typical Electrical Characteristics

Tamb=25°C

100m

(V)

V

10m

CE(SAT)

IC/IB=100

IC/IB=10

IC/IB=20

IC/IB=50

(V)

V

0.25

0.20

0.15

0.10

CE(SAT)

0.05

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Diodes Incorporated

ZXTC6720MC

IC/IB=50

100°C

25°C

-55°C

1m

1m 10m 100m 1 10

IC Colle c to r C urrent (A)

V

CE(SAT)

1.4

1.2

1.0

0.8

0.6

0.4

Normalised Gain

0.2

0.0 1m 10m 100m 1 10

100°C

25°C

-55°C

v I

C

VCE=2V

IC Colle c to r Current (A)

hFE v I

VCE=2V

1.0

0.8

(V)

0.6

BE(ON)

V

0.4

-55°C

25°C

C

100°C

630 540 450 360 270 180 90 0

0.00 1m 10m 100m 1

IC Colle ctor Curr e nt (A)

1.0

IC/IB=50

V

CE(SAT)

v I

C

)

FE

0.8

(V)

0.6

BE(SAT)

V

Typical Gain (h

0.4

1m 10m 100m 1

-55°C

25°C

100°C

IC Colle ctor Curr e nt (A)

V

BE(SAT)

v I

C

0.2 1m 10m 100m 1 10

IC Colle c to r C urrent (A)

V

ZXTC6720MC

Document number: DS31929 Rev. 3 - 2

BE(ON)

v I

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PNP - Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 11) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current

Static Forward Current Transfer Ratio (Note 11)

Collector-Emitter Saturation Voltage (Note 11)

Base-Emitter Turn-On Voltage (Note 11) Base-Emitter Saturation Voltage (Note 11) Output Capacitance

Transition Frequency Turn-on Time

Notes: 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

V V

V

I

CBO

I

EBO

I

CES

h

CE(sat)

V

BE(on

BE(sat

C

t t

FE

obo

f

on off

T

CBO CEO EBO

-70 -150 - V

-70 -125 - V

-7 -8.5 - V

- - -100 nA

- - -100 nA

- - -100 nA

200 300 175

40

-

470 450 275

60 10

-35

-135

-140

-175

-

-50

-200

-220

-270

-

mV

- 0.78 1.00 V

- 0.94 1.05 V

- 14 20 pF

150 180 - MHz

- 40 - ns

- 700 - ns

IC = -100µA IC = -10mA IE = -100µA V

= -55V

CB

V

= -6V

EB

V

= -55V

CE

I

= -10mA, V

C

I

= -100mA, VCE = -5V

C

= -1A, V

I

C

I

= -1.5A, V

C

= -3A, VCE= -5V

I

C

I

= -0.1A, IB = -10mA

C

I

= -0.5A, IB = -20mA

C

= -1.0A, IB = -100mA

I

C

I

= -1.5A, IB= -200mA

C

CE

= -5V

CE

= -5V

IC = -1.5A, VCE= -5V IC = -1.5A, IB= -200mA V

= -10V. f = 1MHz

CB

V

= -10V, IC = -50mA,

CE

f = 100MHz V

CC

I

B1

= -50V, I

= IB2 = -50mA Turn-off Time

= -1A

C

ZXTC6720MC

Document number: DS31929 Rev. 3 - 2

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PNP - Typical Electrical Characteristics

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ZXTC6720MC

1

Tamb=25°C

IC/IB=50

100m

(V)

CE(SAT)

- V

10m

1m 10m 100m 1 10

IC/IB=5

- IC Collector Current (A)

V

CE(SAT)

800

)

700

FE

600 500 400 300 200

Typical Gain (h

100

100°C

25°C

-55°C

0

1m 10m 100m 1

150°C

v I

C

- IC Collector Current (A)

hFE v I

C

IC/IB=20

IC/IB=10

VCE=5V

0.4

IC/IB=10

0.3

(V)

0.2

CE(SAT)

0.1

- V

0.0 10m 100m 1

150°C

100°C

- IC Collector Current (A)

1.0

0.8

IC/IB=10

V

CE(SAT)

-55°C

v I

25°C

C

(V)

0.6

BE(SAT)

0.4

- V

0.2

1m 10m 100m 1

100°C

- IC Collector Current (A)

V

BE(SAT)

v I

C

25°C

-55°C

150°C

VCE=5V

1.0

-55°C

0.8

(V)

0.6

BE(ON)

0.4

- V

0.2 1m 10m 100m 1

25°C

150°C

100°C

- IC Collector Current (A)

V

ZXTC6720MC

Document number: DS31929 Rev. 3 - 2

BE(ON)

v I

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Package Outline Dimensions

A

A1

D

D4

E

L

D2

b

Z

D4

E2

e

A3

DFN3020B-8

Dim Min Max Typ

A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 - - 0.15

b 0.25 0.35 0.30

D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11

e - - 0.65

E 1.95 2.075 2.00 E2 0.43 0.63 0.53

L 0.25 0.35 0.30

Z - - 0.375

All Dimensions in mm

Suggested Pad Layout

ZXTC6720MC

Document number: DS31929 Rev. 3 - 2

G

C

Y2

G1

X

Y1

Y

X1

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Dimensions Value (in mm)

C 0.650 G 0.285

G1 0.090

X 0.400

X1 1.120

Y 0.730 Y1 0.500 Y2 0.365

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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ZXTC6720MC

Document number: DS31929 Rev. 3 - 2

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