Diodes ZXT2MA User Manual

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Features and Benefits

• BV

• I

• Low Saturation Voltage (-220mV @ -1A)

• R

• h

• R

• 4mm

• Lead Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

> -20V

CEO

= -3.5A Continuous Collector Current

C

= 64 mΩ for a low equivalent On-Resistance

SAT

specified up to -6A for high current gain hold up

FE

efficient, 60% lower than SOT23

JA

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2

footprint, 50% smaller than SOT23

Applications

• MOSFET Gate Driving

• DC-DC Converters

• Charging Circuits

• Power switches

• Motor Control

Top View

DFN322

Bottom View

Ordering Information (Note 3)

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Diodes Incorporated

ZXT2MA

20V PNP LOW SATURATION SWITCHING TRANSISTOR

Mechanical Data

• Case: DFN322

• Case material: Molded Plastic. “Green” Molding Compound.

• Terminals: Matte Tin Finish.

• Nominal package height: 0.85mm

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Weight: 0.01 grams (approximate)

C

B

E

Device Symbol

BE

C

Bottom View

Pin Out

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXT2MATA S2 7 8 3,000
ZXT2MATC S2 13 8 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

To

S2

View

ZXT2MA

Document Number: DS35302

Rev. 1 - 2

S2 = Product Type Marking code

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ZXT2MA

Maximum Ratings

Parameter Symbol Limit Unit

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Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current

Continuous Collector Current
Base Current

Thermal Characteristics @T

Characteristic Symbol Value Unit

Power Dissipation
Linear Derating Factor

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Note 6)

Operating and Storage Temperature Range

Notes: 4. For a device surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.

5. Same as note (4), except the device is measured at t < 5 sec.

6. Thermal resistance from junction to solder-point (at the end of the collector lead).

= 25°C unless otherwise specified

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ZXT2MA

Document Number: DS35302

Rev. 1 - 2

(Note 4)
(Note 5) -4.0

(Note 4)
(Note 5)

(Note 4)
(Note 5) 51

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V
V
V

I

P

R
R

T

J, TSTG

CBO
CEO
EBO
CM

I

C

I

B

D

JA

θ

JL

-25 V

-20 V

-7.5 V

-6 A

-3.5

-1 A

1.5
12

2.45

19.6
83

16.8

-55 to +150

A

W

mW/°C

°C/W
°C/W

°C

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© Diodes Incorporated

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Diodes Incorporated

Thermal Characteristics

2.0

10

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V

CE(SAT)

Limited

1

0.1

Collector Current (A)

C

I

0.01

0.1 1 10

DC

1s

Single Pulse, T

100ms

amb

10ms

1ms

=25°C

VCE Collector-Emitter Voltage (V)

Safe Operating A rea

100us

1.5

1.0

0.5

0.0
0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

10 sqcm
Single
1oz Cu
T

=25°C

amb

ZXT2MA

10 sqcm

80

Single
1oz Cu

60

D=0.5

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

3.5

T

=25°C

amb

3.0

T

=150°C

j max

2.5

Continuous

2.0

1.5

1.0

Dissipation (W)

D

0.5

P

0.0

0.1 1 10 100

2oz copper

1oz copper

Board Cu Area (sqcm)

Power Dissipation v Bo ard A rea

225
200
175
150
125
100

75
50
25

Thermal Resistance (°C/W)

0

0.1 1 10 100

1oz copper

2oz copper

Board Cu Area (sqcm)

Thermal Resistance v B o ard Area

ZXT2MA

Document Number: DS35302

Rev. 1 - 2

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Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current

BV
BV
BV

I

CBO

I

EBO

I

CES

CBO
CEO
EBO

-25 -35 - V

-20 -25 - V

-7.5 -8.5 - V

- - -25 nA

- - -25 nA

- - -25 nA

300 475 -

Static Forward Current Transfer Ratio
(Note 7)

h

FE

300 450 ­150 230 -

15 30 -

- -19 -30

Collector-Emitter Saturation Voltage
(Note 7)

V

CE(sat)

- -170 -220

- -190 -250

- -240 -350

- -225 -300
Base-Emitter Turn-On Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Output Capacitance

Transition Frequency
Turn-On Time

Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

V

V

BE(sat

C

BE(on

obo

f

T

t

on

t

off

- -0.87 -0.95 V

- -1.01 -1.075 V

- 21 30 pF

150 180 - MHz

- 40 - ns

- 670 - ns

ZXT2MA

Document Number: DS35302

Rev. 1 - 2

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Diodes Incorporated

IC = -100µA
IC = -10mA
IE = -100µA
VCB = -20V
VEB = -6V
V

= -16V

CES

= -10mA, VCE = -2V

I

C

I

= -100mA, VCE = -2V

C

­I

= -2A, VCE = -2V

C

I

= -6A, VCE = -2V

C

I

=- 0.1A, IB= -10mA

C

I

= -1A, IB = -20mA

mV

C

I

= -1.5A, IB= -50mA

C

I

= -2.5A, IB= -150mA

C

I

= -3.5A, IB = -350mA

C

IC = -3.5A, VCE= -2V
IC = -3.5A, IB= -350mA
V

= -10V. f = 1MHz

CB

V

= -10V, IC = -50mA,

CE

f = 100MHz

= -10V, I

V

CC

I

= IB2 = -10mA Turn-Off Time

B1

ZXT2MA

= -1A

C

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© Diodes Incorporated

Product Line o

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Typical Electrical Characteristics

1

Tamb=25°C

100m

IC/IB=100

(V)

IC/IB=50

CE(SAT)

V

10m

IC/IB=10

1m 10m 100m 1 10

IC Colle c to r Current (A)

V

CE(SAT)

v I

C

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Diodes Incorporated

0.25

IC/IB=50

0.20

0.15

(V)

0.10

CE(SAT)

V

0.05

0.00
1m 10m 100m 1 10

100°C

25°C

IC Colle cto r C urrent (A)

V

CE(SAT)

v I

C

ZXT2MA

-55°C

1.4

1.2

1.0

0.8

0.6

0.4

Normalised Gain

0.2

0.0

100°C

25°C

-55°C

1m 10m 100m 1 10

VCE=2V

IC Colle cto r C urrent (A)

hFE v I

VCE=2V

1.0

0.8

(V)

0.6

BE(ON)

V

0.4

0.2
1m 10m 100m 1 10

-55°C

25°C

C

100°C

IC Colle c to r Current (A)

V

BE(ON)

v I

C

630
540
450
360
270
180
90
0

IC/IB=50

1.0

)

FE

0.8

(V)

0.6

BE(SAT)

V

Typical Gain (h

0.4

1m 10m 100m 1 10

-55°C

25°C

100°C

IC Colle cto r C urrent (A)

V

BE(SAT)

v I

C

ZXT2MA

Document Number: DS35302

Rev. 1 - 2

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Package Outline Dimensions

A3

A

D

Suggested Pad Layout

G

Y4

X1

E

A1

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ZXT2MA

ee

b (3x)

DFN322

L (3x)

E2

E4

D2

CC

X (3x)

Y3

Y2

Y (2x)

Y1

Dimensions

C 0.65
G 0.20
X 0.35

X1 1.52

Y 0.55
Y1 0.98
Y2 0.47
Y3 0.63
Y4 2.20

Dim Min Max Typ

A 0.800 1.00 0.850
A1 - 0.050 -
A3 0.153 0.253 0.203

b 0.180 0.300 0.230

D 1.900 2.100 2.000
D2 1.220 1.420 1.320

e - - 0.650

E 1.900 2.100 2.000
E2 0.780 0.990 0.880
E4 0.480 0.680 0.580

L 0.300 0.500 0.400
All Dimensions in mm

Value

(in mm)

ZXT2MA

Document Number: DS35302

Rev. 1 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

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Diodes Incorporated

ZXT2MA

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Document Number: DS35302

Rev. 1 - 2

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April 2011

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