Diodes ZXT12P40DX User Manual

ZXT12P40DX
SuperSOT4™ DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY V
=-40V; R
CEO
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.
FEATURES
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
characterised up to 5A
h
FE
I
=2A Continuous Collector Current
C
MSOP8 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
ZXT12P40DXTA 7
ZXT12P40DXTC 13
= 75m ;IC= -2A
(inches)
B1
TAPE WIDTH (mm)
12mm embossed
12mm embossed
C1
E1
QUANTITY PER REEL
1000 units
4000 units
B2
E1 B1 E2
B2
Top View
MSOP8
1 2
3
4
C2
8 7 6 5
E2
C1 C1 C2
C2
DEVICE MARKING
T12P40DX
ISSUE 2 - DECEMBER 2006
1
ZXT12P40DX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at TA=25°C (a)(d) Linear Derating Factor
Power Dissipation at TA=25°C (a)(e) Linear Derating Factor
Power Dissipation at TA=25°C (b)(d) Linear Derating Factor
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
B
P
D
P
D
P
D
j:Tstg
-50 V
-40 V
-7.5 V
-5 A
-2 A
-500 mA
0.87
6.9
mW/°C
1.04
8.3
mW/°C
1.25 10
mW/°C
-55 to +150 °C
W
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (b)(d) R
Junction to Ambient (a)(e) R
θJA
θJA
θJA
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power.
ISSUE 2 - DECEMBER 2006
2
143 °C/W
100 °C/W
120 °C/W
CHARACTERISTICS
ZXT12P40DX
ISSUE 2 - DECEMBER 2006
3
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