Diodes ZXT12N50DX User Manual
ZXT12N50DX
SuperSOT4™
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
=50V; R
CEO
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Extremely Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
•
characterised up to 5A
h
•
FE
I
=3A Continuous Collector Current
•
C
• MSOP8 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
= 45m ;IC= 3A
SAT
(inches)
TAPE WIDTH
(mm)
B1
C1
E1
QUANTITY
PER REEL
MSOP8
C2
B2
E2
E1
1
B1
2
E2
3
B2
4
8
C1
C1
7
C2
6
5
C2
ZXT12N50DXTA 7 12mm embossed 1000 units
ZXT12N50DXTC 13
12mm embossed
4000 units
DEVICE MARKING
T12N50DX
ISSUE 1 - MARCH 2000
1
Top View
ZXT12N50DX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
B
P
D
P
D
P
D
j:Tstg
100 V
50 V
7.5 V
10 A
3A
500 mA
0.87
6.9
mW/°C
1.04
8.3
mW/°C
1.25
10
mW/°C
-55 to +150 °C
W
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (b)(d) R
Junction to Ambient (a)(e) R
θJA
θJA
θJA
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - MARCH 2000
2
143 °C/W
100 °C/W
120 °C/W
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