Diodes ZXT12N20DX User Manual
ZXT12N20DX
SuperSOT4™
DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
=20V; R
CEO
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Extremely Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
•
characterised up to 10A
h
•
FE
I
=3.5A Continuous Collector Current
•
C
• MSOP8 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
ZXT12N20DXTA 7
ZXT12N20DXTC 13
= 40m ;IC= 3.5A
SAT
(inches)
C1
B1
TAPE WIDTH
(mm)
12mm embossed
12mm embossed 4000 units
QUANTITY
PER REEL
1000 units
E1
B2
E1
B1
E2
B2
Top View
MSOP8
1
2
3
4
C2
8
7
6
5
E2
C1
C1
C2
C2
DEVICE MARKING
T12N20DX
ISSUE 1 - MARCH 2000
1
ZXT12N20DX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
B
P
D
P
D
P
D
j:Tstg
50 V
20 V
7.5 V
15 A
3.5 A
500 mA
0.87
6.9
mW/°C
1.04
8.3
mW/°C
1.25
10
mW/°C
-55 to +150 °C
W
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (b)(d) R
Junction to Ambient (a)(e) R
θJA
θJA
θJA
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - MARCH 2000
2
143 °C/W
100 °C/W
120 °C/W
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