Diodes ZXT11N20DF User Manual

SuperSOT4™
20V NPN SILICON LOW SATURATION TRANSISTOR

SUMMARY
V

=20V; R

CEO

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.

FEATURES

Extremely Low Equivalent On Resistance

•

Extremely Low Saturation Voltage

•

characterised up to 5A

h

•

FE

=2.5A Continuous Collector Current

• I

C

• SOT23 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

•

Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

= 40m ;IC= 2.5A

SAT

(inches)

TAPE WIDTH
(mm)

QUANTITY
PER REEL

ZXT11N20DF

SOT23

E

C

B

Top View

ZXT11N20DFTA 7 8mm embossed 3000 units

ZXT11N20DFTC 13 8mm embossed 10000 units

DEVICE MARKING

2N0

ISSUE 1 - DECEMBER 1999

1

ZXT11N20DF

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at TA=25°C (a)
Linear Derating Factor

Power Dissipation at TA=25°C (b)
Linear Derating Factor

Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

B

P

D

P

D

j:Tstg

40 V

20 V

7.5 V

5A

2.5 A

500 mA

625

5

806

6.4

mW

mW/°C

mW

mW/°C

-55 to +150 °C

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

θJA

θJA

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.

2

200 °C/W

155 °C/W

ISSUE 1 - DECEMBER 1999