Diodes ZXT10N20DE6 User Manual
ZXT10N20DE6
C
C
SuperSOT™
20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
=20V; R
CEO
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
•
characterised up to 12A
h
•
FE
I
=3.5A Continuous Collector Current
•
C
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
ZXT10N20DE6TA 7 8mm embossed 3000 units
ZXT10N20DE6TC 13 8mm embossed 10000 units
= 55m ;IC= 3.5A
SAT
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
SOT23-6
C
C
B
Top View
E
DEVICE MARKING
618
ISSUE 1 - SEPTEMBER 2000
1
ZXT10N20DE6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
B
P
D
P
D
j:Tstg
20 V
20 V
5V
19 A
3.5 A
500 mA
1.1
8.8
mW/°C
1.7
13.6
mW/°C
-55 to +150 °C
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
2
113 °C/W
73 °C/W
ISSUE 1 - SEPTEMBER 2000
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