Diodes ZXT10N15DE6 User Manual

ZXT10N15DE6

C

C

SuperSOT™
15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY
V

=15V; R

CEO

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.

FEATURES

Low Equivalent On Resistance

•

Extremely Low Saturation Voltage

•

characterised up to 12A

h

•

FE

I

=4A Continuous Collector Current

•

C

• SOT23-6 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXT10N15DE6TA 7 8mm embossed 3000 units
ZXT10N15DE6TC 13 8mm embossed 10000 units

= 50m ;IC= 4A

SAT

(inches)

TAPE WIDTH
(mm)

QUANTITY
PER REEL

SOT23-6

C
C
B

Top View

E

DEVICE MARKING

617

ISSUE 1 - SEPTEMBER 2000

1

ZXT10N15DE6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at TA=25°C (a)

Linear Derating Factor
Power Dissipation at TA=25°C (b)

Linear Derating Factor
Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

B

P

D

P

D

j:Tstg

15 V
15 V

5V

13 A

4A

500 mA

1.1

8.8

mW/°C

1.7

13.6

mW/°C

-55 to +150 °C

W

W

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R

θJA

θJA

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.

2

113 °C/W

73 °C/W

ISSUE 1 - SEPTEMBER 2000