The ZXSC410/420/440 are DC-DC boost controllers. Their wide input
voltage range make suitable for operation from a number of battery
configurations including single Li-Ion cell and 2~3 alkaline/NiCd/NiMH
cells. Using high gain Diodes Zetex-brand switching npn-transistors
allow high voltage boost ratios and/or high output current depending
on transistor. The ZXSC410/440 has a shutdown feature that can also
be used for some dimming functionality. ZXSC420/440 includes an
End of Regulation flag that can be used to indicate when the regulator
is no longer able to maintain the regulated output voltage/current or
has reached the required current/voltage. The ZXSC440 combines
the features of the ZXSC410 and ZXSC420 into one device.
Features
1.65V to 8V Supply Range
Typical Output Regulation of ±1%
Over 85% Typical Efficiency
Output Currents Up to 300mA
4.5µA Typical Shutdown Current ZXSC410/440
End of Regulation Output ZXSC420/440
Available in SOT26 and MSOP-8
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
Pin Assignments
ZXSC410 (SOT26)
V
1
CC
GND
STDN
2
3
ZXSC420 (SOT26)
1
V
CC
GND
EOR
2
3
ZXSC440 (MSOP-8)
DRIVE
SENSE
VFB
N/C
1
2
3
4
Applications
System Power for Battery Portable Products
LCD Bias
Local Voltage Conversion
High Brightness LED Driving
VFB, Sense -0.3 to The lower of (+5.0) or (VCC +0.3)
Operating Temperature -40 to +85 °C
Storage Temperature -55 to +120 °C
Power Dissipation @ +25°C 450 mW
Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may
be affected byexposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.
Recommended Operating Conditions(@T
Symbol Parameter Min Max Unit
VCC VCC Range
TA
VIH
VIL
Ambient Temperature Range
Shutdown Threshold
Shutdown Threshold
Electrical Characteristics (V
Symbol Parameter Conditions Min Typ Max Unit
IQ (Note 4)
I
STDN
EFF (Note 5)
ACC
REF
TCO
REF
T
DRV
F
OSC
Input Parameters
V
SENSE
I
SENSE
VFB
IFB (Note 6)
dVLN
Output Parameters
I
(Note 7)
OUT
I
DRIVE
V
DRIVE
C
DRIVE
V
OHEOR
V
OLEOR
T
EOR
dILD
Notes: 4. Excluding gate/base drive current.
5. Effective sense voltage observed when switching at approximately 100kHz. The internal comparator propagation delay of approximately 1µs causes an
increase in the effective sense voltage over a DC measurement of the sense voltage.
6. I
7. System not device specification, including recommended transistors.
Quiescent Current
Shutdown Current
Efficiency
Reference Tolerance
Reference Temp Co.
Discharge Pulse Width
Operating Frequency
Sense Voltage (Note 5)
Sense Input Current
Feedback Voltage
Feedback Input Current
Line Voltage Regulation
Output Current
Transistor Drive Current
Transistor Voltage Drive
MOSFET Gate Drive cpbty
EOR Flag Output High
EOR Flag Output Low
EOR Delay Time
Load Current Regulation
is typically half of these values at 3V.
FB
= +25°C, unless otherwise specified.)
A
CC
CC
+0.3
+0.3
CC
+0.3)
V
V
V
V
= +25°C, unless otherwise specified.)
A
1.8 8 V
-40 +85 °C
1.5
VCC
V
0 0.55 V
= 3V, @TA = +40°C to +85°C, unless otherwise specified.)