Diodes ZXSC300 User Manual

SINGLE OR MULTI CELL LED DRIVER SOLUTION
Q1
FMMT617
R1
L1
100µH
V
BATT
LED1
WHITE LED
V
cc
Gnd
I
sense
V
drive
U1
ZXSC300
DESCRIPTION
The ZXSC300 is a single or multi cell LED driver designed for applications where step-up voltage conversion from very low input voltages is required. These applications mainly operate from single 1.5V or
1.2V battery cells. The circuit generates constant current pulses that are ideal for driving single or multiple LED’s over a widerangeofoperating voltages.
The ZXSC300 is a PFM controller IC that drives an external Zetex switching transistor with a very low saturation resistance. These transistors are the best switching devices available for this type of switching conversion enabling high efficiency conversion with input voltages below 1 volt. The drive output of the ZXSC controller generates a dynamic drive signal for the switching transistor.
The circuit can start up under full load and operates down to an input voltage of 0.8 volts. The solution configuration ensures optimum efficiency over a wide range of load currents, several circuit configurations are possible depending on battery life versus brightness considerations.
The ZXSC300 is offered in the SOT23-5 package which, when combined with a SOT23 switching transistor, generates a high efficiency small size circuit solution. The IC and discrete combination offers the ultimate cost vs performance solution for single cell LEDdriving applications.
ZXSC300
FEATURES
94% efficiency
Minimum operating input voltage 0.8V
Fixed output current
Low saturation voltage switching transistor
SOT23-5 package
TYPICAL APPLICATION CIRCUIT
APPLICATIONS
LED flashlights and torches
LED backlights
White LED driving
Multiple LED driving
Solar Equipment
ORDERING INFORMATION
DEVICE Reel Tapewidth Quantity
ZXSC300E5TA 7” 8mm 3,000
per reel
DEVICE MARKING C300
Package SOT23-5
ISSUE 4 - SEPTEMBER 2007
1
ZXSC300
ABSOLUTE MAXIMUM RATING
Supply Voltage -0.3 to 10V Maximum Voltage Other Pins -0.3 to V Power Dissipation 450mW
CC
+0.3V
Operating Temperature -40 to 85°C Storage Temperature -55 to 150°C
ELECTRICAL CHARACTERISTICS: Test conditions unless otherwise stated: V
=1.5V, T
CC
AMB
=25°C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
η
V
CC
V
CC(min)
I
Q
I
VDRIVE
I
CC
V
VDRIVE(high)
V
VDRIVE(low)
V
ISENSE
(threshold)
T
CVISENSE
I
ISENSE
T
DRV
Efficiency
Recommended
(1)
0.8 8 V
supply voltage range
Minimum startup and operating voltage
Quiescent current
Base drive current V
Supply current
(3)
High level drive voltage
Low level drive voltage
Output current
(2)
I
DRIVE
I
DRIVE
T
AMB
DRIVE
V
DRIVE
V
ISENSE
V
ISENSE
=-600µA, V
=-600µA, V
(3)
=-10°C
=0.7V,V
=0.7V,V
=0V,I
=50mV,I
=0.7V
DRIVE
=0.7V,
DRIVE
=0V 1.5 3.6 mA
ISENSE
=0V 2 4 mA
ISENSE
=-0.5mA VCC-0.3 VCCV
VDRIVE
=5mA 0 0.2 V
VDRIVE
14 19 24 mV
reference voltage
I
SENSE
voltage temp co.
I
input current V
SENSE
2
=0V 0 -30 -65 µA
ISENSE
Discharge pulse width 1.2 1.7 3.2 µs
94 %
0.8
0.92 V
0.9
0.2 mA
0.4 %/°C
OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS
F
OSC
1
Application dependent, see reference designs.
2
These parameters guaranteed by design and characterisation
3
Total supply current =IQ+ I
4
Operating frequency is application circuit dependent. See applications section.
Recommended operating frequency
, see typical characteristics
VDRIVE
(4)
200 kHz
ISSUE 4 - SEPTEMBER 2007
2
ZXSC300
FMMT617
For the circuits described in the applications section, Zetex FMMT617 is the recommended pass transistor. The following indicates outline data for the transistor, more detailed information can be found at www.zetex.com/FMMT617
ELECTRICAL CHARACTERISTICS (at TA= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-Emitter Saturation Voltage
Collector-Emitter Breakdown Voltage
V
CE(sat)
V
(BR)CEO
15 18 V IC=10mA*
8
70
150
*Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2%
ZHCS1000
For the circuits described in the applications section Zetex ZHCS1000 is the recommended Schottky diode. The following indicates outline data for the diode, more detailed information is available at www.zetex.com
14 100 200
mV mV mV
IC=0.1A, IB=10mA* I
=1A, IB=10mA*
C
I
=3A, IB=40mA*
C
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Forward Voltage V
Reverse Current I
Reverse Recovery Time
F
R
t
rr
= 25°C unless otherwise stated).
amb
400 500mVmV
50 100
12 ns Switched from IF= 500mA
μA
IF=500mA I
=1A
F
VR=30V
to I
= 500mA. Measured
R
at I
=50mA
R
*Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2%
ISSUE 4 - SEPTEMBER 2007
3
ZXSC300
TYPICAL CHARACTERISTICS
ISSUE 4 - SEPTEMBER 2007
4
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