Page 1
Product Summary
• Schottky Bridge and Freewheel diode for use in MR16 LED
Drive
• Internal Ambient Temperature = 90°C MAX within MR16 circuit
enclosure
• V
R
• I
= 0.4A
F
• I
R
= 13.2V
= 10μA
AVG
RMS
Description and Applications
This low leakage Schottky bridge and freewheel diode have been
specifically designed for the MR16 LED driver solution alongside
ZXLD1350E5 as described in Design Note DN86.
SM-8
Top View
Device Circuit
ZXSBMR16PT8
SCHOTTKY BRIDGE RECTIFIER PLUS FREEWHEEL DIODE
Features and Benefits
• Compact surface mount solution and reduced component count in
MR16 LED drive circuit
• Optimized bridge and freewheel diode for use in MR16 LED diode
circuitry
• Low V
• Qualified to AEC-Q101 Standards for High Reliability
and low reverse leakage current
F
Mechanical Data
• Case: SM-8
• Case Material: TBD
• Moisture Sensitivity: TBD
• Terminals: TBD
• Weight: TBD grams (approximate)
Top View
Pin-Out
Ordering Information (Note 1)
Device Packaging Shipping
ZXSBMR16PT8TA SM-8 1000/Tape & Reel
Notes: 1. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
ZXMB
MR16P
www.diodes.com
ZXSBMR16P = Product Type Marking Code
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)
ZXSBMR16PT8
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
Average Rectified Forward Current (Notes 2 & 3)
Peak Repetitive Forward Current
Non Repetitive Forward Current
≤ 100μs
t
t ≤ 10ms
V
V
I
F(AV
I
I
RRM
RMS
FPK
FSM
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation, TA = 25°C (Note 2) PD
Thermal Resistance, Junction to Ambient (Note 2)
Junction Temperature, Forward Dissipation Only
Junction Temperature, Reverse Dissipation (Notes 2, 3, & 4)
Storage Temperature Range
MR16 LED Internal Ambient Temperature (Note 4)
Notes: 2. For a bridge mounted on1.6mm FR4 PCB with minimum copper pads and track dimensions in still air.
3. Supply 12V RMS with capacitive bridge load.
4. Maximum bridge operating junction temperature must be reduced with increased reverse bias voltage to maintain unconditional thermal stability.
5. Refer to Design Note DN86
R
T
θJA
T
T
STG
T
J
J
A
40 V
13.2 V
0.4 A
3.5 A
13 A
3.5 A
1 W
125 °C/W
150 °C
125 °C
-55 to +150 °C
90 °C
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
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(BR)
ZXSBMR16PT8
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage
Forward Voltage (Note 4)
Reverse Current
Diode Capacitance
V
V
F
I
R
C
D
Reverse Recovery Time trr - 3 - ns
40 - - V
R
- 305 360
- 355 410
- 405 470
- 485 550
- 570 660
- 640 750
- 415 -
- 6 10
- 370 -
- 16 - pF
IR = 200μA
I
F
I
F
I
F
mV
I
F
I
F
I
F
I
F
V
μA
R
V
R
f = 1MHz, VR = 30V
Switched from I
I
R
Measured @ I
Reverse Recovery Charge
Notes: 4. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle ≤ 2%.
Q
rr
- 210 - pC
di/dt = 500mA/ns.
R
source
= 50mA
= 100mA
= 250mA
= 500mA
= 750mA
= 1A
= 500mA, TA = 100°C
= 30V
= 30V, TA = 85°C
= 100mA to
F
= 100mA
= 10mA
R
= 6Ω; R
load
= 10Ω
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
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ZXSBMR16PT8
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
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ZXSBMR16PT8
Package Outline Dimensions
b
D
15°
E1
E
ee1
45°
c
L
A
A1
Dim Min Max Typ
A
A1 0.02 0.1
b
c 0.24 0.32
D 6.3 6.7
e
e1
E 6.7 7.3
E1 3.3 3.7
L 0.9
SM-8
1.7
−
0.7
−
− −
− −
All Dimensions in mm
− −
−
−
−
−
−
1.53
4.59
−
−
Suggested Pad Layout
Y1
C1
X (8x) C
Y (8x)
Dimensions Value (in mm)
C 1.52
C1 4.6
X 0.95
Y 2.80
Y1 6.80
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
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Copyright © 2011, Diodes Incorporated
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ZXSBMR16PT8
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
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