Diodes ZXSBMR16PT8 User Manual

Product Summary
Schottky Bridge and Freewheel diode for use in MR16 LED Drive
Internal Ambient Temperature = 90°C MAX within MR16 circuit enclosure
V
R
I
= 0.4A
F
I
R
= 13.2V
= 10μA
AVG
RMS
Description and Applications
This low leakage Schottky bridge and freewheel diode have been specifically designed for the MR16 LED driver solution alongside ZXLD1350E5 as described in Design Note DN86.
SM-8
Top View
Device Circuit
ZXSBMR16PT8
SCHOTTKY BRIDGE RECTIFIER PLUS FREEWHEEL DIODE
Features and Benefits
Compact surface mount solution and reduced component count in MR16 LED drive circuit
Optimized bridge and freewheel diode for use in MR16 LED diode circuitry
Low V
Qualified to AEC-Q101 Standards for High Reliability
and low reverse leakage current
F
Mechanical Data
Case: SM-8
Case Material: TBD
Moisture Sensitivity: TBD
Terminals: TBD
Weight: TBD grams (approximate)
Top View
Pin-Out
Ordering Information (Note 1)
Device Packaging Shipping
ZXSBMR16PT8TA SM-8 1000/Tape & Reel
Notes: 1. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
ZXMB
MR16P
www.diodes.com
ZXSBMR16P = Product Type Marking Code
1 of 6
February 2011
© Diodes Incorporated
)
ZXSBMR16PT8
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage Average Rectified Forward Current (Notes 2 & 3) Peak Repetitive Forward Current
Non Repetitive Forward Current
100μs
t
t ≤ 10ms
V V I
F(AV
I
I
RRM RMS
FPK
FSM
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation, TA = 25°C (Note 2) PD
Thermal Resistance, Junction to Ambient (Note 2) Junction Temperature, Forward Dissipation Only
Junction Temperature, Reverse Dissipation (Notes 2, 3, & 4) Storage Temperature Range MR16 LED Internal Ambient Temperature (Note 4)
Notes: 2. For a bridge mounted on1.6mm FR4 PCB with minimum copper pads and track dimensions in still air.
3. Supply 12V RMS with capacitive bridge load.
4. Maximum bridge operating junction temperature must be reduced with increased reverse bias voltage to maintain unconditional thermal stability.
5. Refer to Design Note DN86
R
T
θJA
T T
STG
T
J J
A
40 V
13.2 V
0.4 A
3.5 A 13 A
3.5 A
1 W
125 °C/W 150 °C
125 °C
-55 to +150 °C 90 °C
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
2 of 6
www.diodes.com
February 2011
© Diodes Incorporated
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