1 PGND1 Power Ground 1: Ground return for emitter of output transistor: Connect PGND1/2 and GND together.
2 OUT1
3 GND Analog Ground: Ground return for reference and amplifiers: Connect GND and PGND1/2 together.
4 PGND2 Power Ground 2: Ground return for emitter of output transistor: Connect PGND1/2 and GND together.
5 OUT2
6 FB2 Feedback Input 2. Regulates to 600mV nominal.
7 IN2 Supply Input 2. Connect a 0.1μF ceramic capacitor close to the device from IN2 to GND.
8 FB1 Feedback Input 1. Regulates to 600mV nominal.
9 No connection
10 IN1 Supply Input 1. Connect a 0.1μF ceramic capacitor close to the device from IN1 to GND.
Flag Floating or connect to GND
Name Function
Output 1. Connect a capacitor close to device between OUT1 and GND. See Applications Information
section.
Output 2. Connect a capacitor close to device between OUT2 and GND. See Applications Information
section.
ZXRD060
Function Block Diagram
NEW PRODUCT
The ZXRD060 differs from most other shunt regulators in that it has separate input and output pins and a low voltage
reference. This enables it to regulate rails do wn to 600mV and makes th e part idea l for is olated po wer suppl y applications that
use opto-couplers in the feedback loop and where the open-collect or output is required to op erate down to v oltages as lo w as
200mV.
The wide input voltage range of 2V to 18V and output voltage rang e of 0.2V to 1 8V enables the ZXRD060 to be po wered from
an auxiliary rail, while controlling a master rail which is above the auxi liary rail volt age, or belo w the minimum V
allows it to operate as a low-dropout voltage regulator for microprocessor/DSP/PLD cores.
As with other shunt regulators (and shunt references), the ZXRD060 c ompares its internal amplifier FB pin to a high accurac y
internal reference; if FB is below the reference then OUT turns off, but if FB is above the reference then OUT sinks current –
up to a maximum of 15mA.
Absolute Maximum Ratings (Voltages to GND Unless Otherwise Stated)
Symbol Parameter Rating Unit
VIN IN Voltage relative to GND 20 V
V
OUT Voltage relative to GND 20 V
OUT
VFB FB Voltage relative to GND 20 V
P
PGND Voltage relative to GND -0.3 to +0.3 V
GND
I
OUT Pin Current 20 mA
OUT
TJ Operating Junction Temperture -40 to 150 °C
TST Storage Temperature 55 to 150 °C
Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional
operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure
to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and
transporting these devices.
Package Thermal Data
P
DIS
NEW PRODUCT
Package θJA
TA = 25°C, TJ = 150°C
DFN2626P10 152°C/W 0.8W
ZXRD060
Recommended Operating Conditions
Symbol Parameter Min Max Units
VIN IN Voltage Range (0 to 125°C) 2 18
VIN IN Voltage Range (-40 to 0°C) 2.2 18
V
OUT Voltage Range 0.2 18
OUT
I
OUT Pin Current 0.3 15 mA
OUT
TA Operating Ambient Temperatu r e Range-40 125 °C
Note: 3. Production testing of the device is performed at 25°C. Functional operation of the device and parameters specified over the operating temperature
range are guaranteed by design, characterisation and process control.