Diodes ZXMS6006SG User Manual
f
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
Product Summary
• Continuos drain source voltage 60V
• On-state resistance 100mΩ
• Nominal load current (VIN = 5V) 2.8A
• Clamping Energy 480mJ
Description and Applications
The ZXMS6006SG is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6006SG is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
ADVANCE INFORMATION
• Lamp Driver
• Motor Driver
• Relay Driver
• Solenoid Driver
SOT-223
Top View
IN
Features and Benefits
• Compact high power dissipation package
• Low input current
• Logic Level Input (3.3V and 5V)
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input Protection (ESD)
• High continuous current rating
• Green, RoHS Compliant (Note 1)
• Halogen and Antimony Free. (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, “Green” Molding Compound.
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.112 grams (approximate)
Device symbol
A Product Line o
Diodes Incorporated
INTELLIFET
UL Flammability Classification Rating 94V-0
D
S
Top view
Pin Out
ZXMS6006SG
®
MOSFET
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMS6006SGTA ZXMS6006S 7 12 1,000
Notes: 1. Contain <900ppm bromine, chlorine (<1500ppm total) and <1000ppm antimony compounds.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006SG
Document number: DS35141 Rev. 2 - 2
ZXMS
6006S
ZXMS6006S = Product type Marking Code
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Functional Block Diagram
ADVANCE INFORMATION
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Diodes Incorporated
ZXMS6006SG
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006SG
Document number: DS35141 Rev. 2 - 2
2 of 9
www.diodes.com
November 2011
© Diodes Incorporated
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)
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ZXMS6006SG
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Continuous Drain-Source Voltage
Drain-Source Voltage for short circuit protection
Continuous Input Voltage
Continuous Input Current @-0.2V ≤ VIN ≤ 6V
Continuous Input Current @V
< -0.2V or VIN > 6V
IN
Pulsed Drain Current @VIN = 3.3V IDM
Pulsed Drain Current @VIN = 5V IDM
Continuous Source Current (Body Diode) (Note 4)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,
= 25°C, ID = 0.5A, VDD = 24V
T
J
Electrostatic Discharge (Human Body Model)
Charged Device Model
ADVANCE INFORMATION
V
DS(SC
V
V
V
V
I
I
E
ESD
CDM
I
SM
DS
IN
S
AS
IN
60 V
16 V
-0.5 ... +6 V
No limit
│≤2
│I
IN
11 A
13 A
2 A
12 A
480 mJ
4000 V
1000 V
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Power Dissipation at TA = 25°C (Note 4)
Linear Derating Factor
Power Dissipation at TA = 25°C (Note 5)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 6)
Operating Temperature Range
Storage Temperature Range
Notes: 4. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and
source 20% to isolate connections.
5. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and
source 20% to isolate connections.
6. Thermal resistance between junction and the mounting surfaces of drain and source pins.
P
D
P
D
R
θJA
R
θJA
R
θJC
T
J
T
STG
1.0
8.0
1.6
12.8
125
83
39
-40 to +150
-55 to +150
mA
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
°C
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006SG
Document number: DS35141 Rev. 2 - 2
3 of 9
www.diodes.com
November 2011
© Diodes Incorporated
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