Diodes ZXMS6006DT8 User Manual
f
60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
Product Summary
• Continuos drain source voltage 60V
• On-state resistance 100mΩ
• Nominal load current (VIN = 5V) 2.8A
• Clamping Energy 210mJ
Description and Applications
The ZXMS6006DT8 is a dual self protected low side MOSFET with
logic level input. It integrates over-temperature, over-current, overvoltage (active clamp) and ESD protected logic level functionality. The
ZXMS6006DT8 is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
ADVANCE INFORMATION
• Lamp Driver
• Motor Driver
• Relay Driver
• Solenoid Driver
SM-8
IN1
Top View
D1
IN2
S1
Device symbol
A Product Line o
Diodes Incorporated
ZXMS6006DT8
INTELLIFET
®
Features and Benefits
• Compact high power dissipation package
• Low input current
• Logic Level Input (3.3V and 5V)
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input Protection (ESD)
• High continuous current rating
• Green, RoHS Compliant (Note 1)
• Halogen and Antimony Free. (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SM-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.117 grams (approximate)
1
D2
IN1
S1
IN2
S2
S2
Top view
Pin-Out
MOSFET
D1
D1
D2
D2
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMS6006DT8TA ZXMS6006D 7 12 1,000
Notes: 1. Contain <900ppm bromine, chlorine (<1500ppm total) and <1000ppm antimony compounds.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
ZXMS
6006D
Top View
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DT8
Document number: DS35143 Rev. 1 - 2
Pin 1
ZXMS6006D = Product Type Marking Code
1 of 9
www.diodes.com
December 2010
© Diodes Incorporated
f
Functional Block Diagram
ADVANCE INFORMATION
A Product Line o
Diodes Incorporated
ZXMS6006DT8
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DT8
Document number: DS35143 Rev. 1 - 2
2 of 9
www.diodes.com
December 2010
© Diodes Incorporated
f
)
A Product Line o
Diodes Incorporated
ZXMS6006DT8
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Continuous Drain-Source Voltage
Drain-Source Voltage For Short Circuit Protection
Continuous Input Voltage
Continuous Input Current @-0.2V ≤ VIN ≤ 6V
Continuous Input Current @V
< -0.2V or VIN > 6V
IN
Pulsed Drain Current @VIN = 3.3V ( Note 6) IDM
Pulsed Drain Current @VIN = 5V ( Note 6) IDM
Continuous Source Current (Body Diode) (Note 4)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,
= 25°C, ID = 0.5A, VDD = 24V
T
J
Electrostatic Discharge (Human Body Model)
Charged Device Model
ADVANCE INFORMATION
V
DS(SC
V
V
V
V
I
I
E
ESD
CDM
I
SM
DS
IN
S
AS
IN
60 V
16 V
-0.5 ... +6 V
No limit
│≤2
│I
IN
11 A
13 A
2 A
12 A
210 mJ
4000 V
1000 V
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Power Dissipation at TA = 25°C (Notes 4 & 7)
Linear Derating Factor
Power Dissipation at TA = 25°C (Notes 4 & 8)
Linear Derating Factor
Power Dissipation at TA = 25°C (Notes 5 & 7)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Notes 4 & 7)
Thermal Resistance, Junction to Ambient (Notes 4 & 8)
Thermal Resistance, Junction to Case (Notes 5 & 7)
Thermal Resistance, Junction to Case (Note 9)
Operating Temperature Range
Storage Temperature Range
Notes: 4. For a dual device surface mounted on a 25mm x 25mm single sided 1oz weight copper split down the middle on 1.6mm FR4 board, in still air conditions.
5. For a dual device surface mounted on FR4 PCB measured at t≤ 10sec
6. Repetitive rating25mm x 25mm FR4 PCB, D = 0.02, Pulse width = 300µs – pulse width limited by junction temperature. Refer to transient thermal
impedance graph.
7. For a dual device with one active die.
8. For a dual device with 2 active die running at equal power.
9. Thermal resistance from junction to the mounting surface of the drain pin.
P
D
P
D
P
D
R
θJA
R
θJA
R
θJC
R
θJC
T
J
T
STG
1.16
9.28
1.67
13.3
2.13
17
108
75
58.7
26.5
-40 to +150
-55 to +150
mA
W
mW/°C
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C/W
°C
°C
IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
ZXMS6006DT8
Document number: DS35143 Rev. 1 - 2
3 of 9
www.diodes.com
December 2010
© Diodes Incorporated
Loading...