Diodes ZXMS6004SG User Manual
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
Product Summary
Continuos drain source voltage 60V
On-state resistance 500mΩ
Nominal load current (VIN = 5V) 1.3A
Clamping Energy 480mJ
Description
The ZXMS6004SG is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6004SG is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Applications
Especially suited for loads with a high in-rush current such as
ADVANCE INFORMATION
lamps and motors.
All types of resistive, inductive and capacitive loads in switching
applications.
µC compatible power switch for 12V and 24V DC applications
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear Mode capability - the current-limiting protection circuitry is
designed to de-activate at low V
dissipation. The maximum DC operating current is therefore
determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not
compromise the product’s ability to self-protect at low V
to minimize on state power
DS
Top View
DS.
SOT-223
ZXMS6004SG
INTELLIFET
®
Features and Benefits
Compact high power dissipation package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input Protection (ESD)
High continuous current rating
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (approximate)
S
D
Top view
Pin Out
D
IN
MOSFET
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMS6004SGTA ZXMS6004S 7 12 1,000
Note: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
IntelliFET® is a registered trademark of Diodes Incorporated
ZXMS6004SG
Document number: DS32247 Rev. 1 - 2
ZXMS
6004S
ZXMS6004S = Product type Marking Code
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© Diodes Incorporated
Functional Block Diagram
ADVANCE INFORMATION
ZXMS6004SG
IntelliFET® is a registered trademark of Diodes Incorporated
ZXMS6004SG
Document number: DS32247 Rev. 1 - 2
2 of 9
www.diodes.com
April 2014
© Diodes Incorporated
)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Continuous Drain-Source Voltage
Drain-Source Voltage for Short Circuit Protection
Continuous Input Voltage
Continuous Input Current @-0.2V ≤ VIN ≤ 6V
Continuous Input Current @V
< -0.2V or VIN > 6V
IN
V
DS(SC
V
DS
V
IN
I
IN
Pulsed Drain Current @VIN = 3.3V IDM
Pulsed Drain Current @VIN = 5V IDM
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,
T
= 25C, ID = 0.5A, VDD = 24V
J
Electrostatic Discharge (Human Body Model)
Charged Device Model
V
V
I
E
ESD
CDM
I
SM
S
AS
Thermal Characteristics (@T
ADVANCE INFORMATION
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Power Dissipation at TA = +25C (Note 5)
Linear Derating Factor
Power Dissipation at TA = +25C (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating Temperature Range
Storage Temperature Range
Notes: 5. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions.
6. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions.
7. Thermal resistance between junction and the mounting surfaces of drain and source pins.
P
D
P
D
R
θJA
R
θJA
R
θJC
T
J
T
STG
-40 to +150
-55 to +150
ZXMS6004SG
60 V
36 V
-0.5 to +6 V
No limit
│≤2
│I
IN
2 A
2.5 A
1 A
5 A
480 mJ
4000 V
1000 V
1.0
8.0
1.6
12.8
125
83
39
mA
W
mW/C
W
mW/C
C/W
C/W
C/W
C
C
IntelliFET® is a registered trademark of Diodes Incorporated
ZXMS6004SG
Document number: DS32247 Rev. 1 - 2
3 of 9
www.diodes.com
April 2014
© Diodes Incorporated
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