Diodes ZXMS6004FF User Manual

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

Product Summary

 Continuos drain source voltage 60V
 On-state resistance 500mΩ
 Nominal load current (V
 Clamping Energy 90mJ

= 5V) 1.3A

IN

Description

The ZXMS6004FF is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6004FF is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.

Applications

 Especially suited for loads with a high in-rush current such as

lamps and motors

 All types of resistive, inductive and capacitive loads in switching

applications

 μC compatible power switch for 12V and 24V DC applications
 Automotive rated
 Replaces electromechanical relays and discrete circuits
 Linear Mode capability - the current-limiting protection circuitry is

designed to de-activate at low VDS to minimize on state power
dissipation. The maximum DC operating current is therefore
determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not
compromise the product’s ability to self-protect at low VDS.

ZXMS6004FF

INTELLIFET™ MOSFET

Features and Benefits

 Compact high power dissipation package
 Low input current
 Logic Level Input (3.3V and 5V)
 Short circuit protection with auto restart
 Over voltage protection (active clamp)
 Thermal shutdown with auto restart
 Over-current protection
 Input Protection (ESD)
 High continuous current rating
 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT-23F
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish

 Weight: 0.012 grams (approximate)

SOT23F

Top View



D

Top view

Pin Out

S

IN

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMS6004FFTA 1K6 7 12 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.

1K6

ZXMS6004FF

Document number: DS33609 Rev. 5 - 2

1K6 = Product type Marking Code

1 of 8

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March 2014

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)

Functional Block Diagram

ZXMS6004FF

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Continuous Drain-Source Voltage
Drain-Source Voltage for Short Circuit Protection
Continuous Input Voltage
Continuous Input Current @-0.2V ≤ VIN ≤ 6V
Continuous Input Current @V

< -0.2V or VIN > 6V

IN

V

DS(SC

V

DS

V

IN

I

IN

Pulsed Drain Current @VIN = 3.3V IDM
Pulsed Drain Current @VIN = 5V IDM
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,

= +25°C, ID = 0.5A, VDD = 24V

T

J

Electrostatic Discharge (Human Body Model)
Charged Device Model

V
V

I

E

ESD

CDM

I

SM

S

AS

60 V
36 V

-0.5 to +6 V
No limit

│≤2

│I

IN

mA

2 A

2.5 A
1 A
5 A

90 mJ

4000 V
1000 V

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Power Dissipation at TA = +25°C (Note 5)
Linear Derating Factor

Power Dissipation at TA = +25°C (Note 6)
Linear Derating Factor

Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating Temperature Range
Storage Temperature Range

Notes: 5. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions.

6. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions.

7. Thermal resistance from junction and the mounting surfaces of the drain pins.

P

D

P

D

R

θJA

R

θJA

R

θJC

T

J

T

STG

0.83

6.66

1.5

12.0
150

83 °C/W
44 °C/W

-40 to +150 °C

-55 to +150 °C

W

mW/°C

W

mW/°C

C/W

IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.

ZXMS6004FF

Document number: DS33609 Rev. 5 - 2

2 of 8

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March 2014

© Diodes Incorporated

Recommended Operating Conditions

The ZXMS6004FF is optimized for use with µC operating from 3.3V and 5V supplies.

Characteristic Symbol Min Max Unit

Input Voltage Range
Ambient Temperature Range
High Level Input Voltage for MOSFET to be on
Low level input voltage for MOSFET to be off
Peripheral Supply Voltage (voltage to which load is referred)

Thermal Characteristics

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Max Power Dissipation (W)

100m

Drain Current (A)

D

I

10m

Limited
by R

Limited by Over-Current Protection

DS(on)

1

DC

1s

=25°C

100ms

10ms

Limit of s/c protection

Single Pulse

T

amb

15X15mm FR4

1oz Cu

110

VDS Drain-Source Voltage (V)

1ms

Safe Operating Area

ZXMS6004FF

V

IN

T

A

V

IH

V

IL

V

P

15X15mm FR4

1oz Cu

0 25 50 75 100 125 150

0 5.5 V

-40 +125 °C
3 5.5 V
0 0.7 V
0 16 V

50X50mm FR4

2oz Cu

Temperature (°C)

Derating Curve

160

T

=25°C

140

120

amb

15X15mm FR4

1oz Cu

100

100

D=0.5

80

60

D=0.2

40

20

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.

ZXMS6004FF

Document number: DS33609 Rev. 5 - 2

3 of 8

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10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

Single Pulse

T

=25°C

amb

15X15mm FR4

1oz Cu

March 2014

© Diodes Incorporated