Diodes ZXMS6004DT8 User Manual
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ZXMS6004DT8
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
™
INTELLIFET
MOSFET
SUMMARY
Continuous drain source voltage 60 V
On-state resistance 500 mΩ
Nominal load current (V
Clamping Energy 210 mJ
DESCRIPTION
The ZXMS6004DT8 is a dual self protected low side MOSFET
with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level
functionality independently per channel. The ZXMS6004DT8 is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
FEATURES
• Compact dual package
• Low input current
• Logic Level Input (3.3V and 5V)
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input Protection (ESD)
• High continuous current rating
ORDERING INFORMATION
DEVICE
ZXMS6004DT8TA
= 5V) 1.2 A
IN
PART
MARK
ZXMS
6004D
REEL SIZE
(inches)
7
TAPE WIDTH
(mm)
12 embossed
SM8 Package
QUANTITY PER
REEL
1,000 units
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
1 of 9
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June 2010
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FUNCTIONAL BLOCK DIAGRAM
IN1/2
Human
body ESD
protection
Over temperature
protection
Over current
protection
Over Voltage
Pr
n
Logic
dV/dt
limitati
n
D1/2
S1/2
APPLICATIONS AND INFORMATION
• Two completely isolated independent channels
• Especially suited for loads with a high in-rush current such as lamps and motors.
• All types of resistive, inductive and capacitive loads in switching applications.
• μC compatible power switch for 12V and 24V DC applications.
• Automotive rated.
• Replaces electromechanical relays and discrete circuits.
• Linear Mode capability - the current-limiting protection circuitry is designed to de-activate
at low V
therefore determined by the thermal capability of the package/board combination, rather
than by the protection circuitry. This does not compromise the product’s ability to selfprotect at low V
to minimise on state power dissipation. The maximum DC operating current is
DS
.
DS
ZXMS6004DT8
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Continuous Drain-Source Voltage VDS 60 V
Drain-Source Voltage for short circuit protection V
36 V
DS(SC
Continuous Input Voltage VIN -0.5 ... +6 V
Continuous Input Current
-0.2V≤V
V
IN
≤6V
IN
<-0.2V or VIN>6V
Operating Temperature Range Tj, -40 to +150
Storage Temperature Range T
Power Dissipation at TA =25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA =25°C (a)(e)
Linear Derating Factor
Power Dissipation at TA =25°C (b)(d)
Linear Derating Factor
I
IN
No limit
│I
│≤2
IN
-55 to +150
stg
P
1.16
D
9.28
P
1.67
D
13.3
P
2.13
D
17
mW/°C
mW/°C
mW/°C
mA
°C
°C
W
W
W
Pulsed Drain Current @ VIN=3.3V (c) IDM 2 A
Pulsed Drain Current @ VIN=5V (c) IDM 2.5 A
Continuous Source Current (Body Diode) (a) IS 1 A
Pulsed Source Current (Body Diode) (c) ISM 5 A
E
Unclamped single pulse inductive energy, Tj=25°C,
=0.5A, VDD=24V
I
D
Electrostatic Discharge (Human Body Model) V
Charged Device Model V
210 mJ
AS
4000 V
ESD
1000 V
CDM
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (a)(e) R
Junction to Ambient (b)(d) R
Junction to Case (f) R
108
θJA
75
θJA
58.7
θJA
26.5
θJC
°C/W
°C/W
°C/W
°C/W
NOTES
(a) For a dual device surface mounted on a 25mm x 25mm FR4 PCB single sided 1oz weight copper split
down the middle on 1.6mm FR4 board, in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ≤ 10sec
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs – pulse width limited by junction
temperature. Refer to transient Thermal Impedance Graph.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead)
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
3 of 9
www.diodes.com
June 2010
© Diodes Incorporated
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