Diodes ZXMS6004DG User Manual

A Product Line of

Diodes Incorporated

ZXMS6004DG

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Top view

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D

IN

60V N-channel self protected enhancement mode Intellifet MOSFET

Summary

Continuous drain source voltage 60 V

On-state resistance 500 mΩ

Nominal load current (V

Clamping energy 490mJ

= 5V) 1.3 A

IN

Description

The ZXMS6004DG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6004DG is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.

Features

• Compact high power dissipation package

• Low input current

• Logic Level Input (3.3V and 5V)

• Short circuit protection with auto restart

• Over voltage protection (active clamp)

• Thermal shutdown with auto restart

• Over-current protection

• Input Protection (ESD)

• High continuous current rating

Ordering information

Device Part mark Reel size

(inches)

ZXMS66004DGTA ZXMS

6004D

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7 12 embossed 3,000 units

Tape width

(mm)

Quantity per reel

Functional block diagram

Over-voltage Protection

ESD Protection

Over-temperature Protection

Over-current Protection

Logic

dV/dt Limitation

IN

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ZXMS6004DG

Application information

• Especially suited for loads with a high in-rush current such as lamps and motors.

• All types of resistive, inductive and capacitive loads in switching applications.

• μC compatible power switch for 12V and 24V DC applications.

• Automotive rated.

• Replaces electromechanical relays and discrete circuits.

• Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low V therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low V

DS

to minimise on state power dissipation. The maximum DC operating current is

DS

.

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ZXMS6004DG

Absolute maximum ratings

Parameter Symbol Limit Unit

Continuous Drain-Source voltage V

Drain-Source voltage for short circuit protection V

Continuous input voltage V

Continuous input current

DS

DS(SC)

IN

I

IN

60 V

36 V

-0.5 ... +6 V

mA

-0.2V≤V

V

IN

≤6V

IN

<-0.2V or VIN>6V

Operating temperature range T

Storage temperature range T

Power dissipation at T

=25°C

A

(a)

Linear derating factor Power dissipation at T

=25°C

A

(b)

Linear derating factor Pulsed drain current @ V

Pulsed drain current @ V

Continuous source current (Body Diode)

=3.3V I

IN

=5V I

IN

(a)

Pulsed dource current (Body Diode) I

Unclamped single pulse inductive energy, Tj=25°C, I

=0.5A, VDD=24V

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Electrostatic discharge (Human body model) V

Charged device model V

Thermal resistance

No limit

│I

│≤2

IN

, -40 to +150 °C

j

stg

P

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-55 to +150 °C

1.3

10.4

P

D

3.0

24

DM

I

S

SM

E

AS

ESD

CDM

2A

2.5 A

1A

5A

490 mJ

4000 V

1000 V

W

mW/°C

W

mW/°C

Parameter Symbo Value Unit Junction to ambient

Junction to ambient Junction to case

NOTES

(a) For a device surface mounted on a 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air

conditions.

(b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board in still air

conditions.

(c) Thermal resistance from junction to the mounting surface of the drain pin.

(a) (b)

(c)

R

θJA

R

θJA

R

θJC

96 42 12

°C/W °C/W °C/W

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