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ZXMS6002G
60V N-Channel self protected enhancement mode
IntelliFET™ MOSFET with status indication
Summary
Continuous drain source voltage VDS = 60V
On-state resistance 500m⍀
Nominal load current (V
Clamping energy 550mJ
= 5V) 1.4A
IN
Description
Self protected low side MOSFET. Monolithic
over temperature, over current, over voltage
(active clamp) and ESD protected logic level
functionality. Intended as a general purpose
switch, with status indication.
Features
• Status pin (analog status indication)
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input protection (ESD)
• Load dump protection (actively protects
load)
• Logic level input
• High continuous current rating
S
D
Top view
Note: The tab is connected to the drain pin and
must be electrically isolated from the source
pin. Connection of significant copper to the tab
is recommended for best thermal performance.
Status
IN
Ordering information
Device Part mark Reel size
(inches)
ZXMS6002GTA ZXMS6002 7 12 embossed 1000
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Tape width
(mm)
Quantity
per reel
Page 2
Functional block diagram
S
Over voltage
protection
Over current
protection
Over temperature
protection
Logic
Status
Human body
ESD protection
D
IN
dV/dt
limitation
ZXMS6002G
Applications and information
• Especially suited for loads with a high in-rush current such as lamps and motors
• All types of resistive, inductive and capacitive loads in switching applications
• C compatible power switch for 12V and 24V DC applications
• Automotive rated
• Replaces electromechanical relays and discrete circuits
• Linear mode capability - the current-limiting protection circuitry is designed to de-activate at
low V
max. DC operating current is therefore determined by the thermal capability of the package/
board combination, rather than by the protection circuitry
Note: This does not compromise the product's ability to self-protect during short-circuit load
conditions.
• Status pin voltage reflects the gate drive being applied internally to the power MOSFET.
With V
Status voltage ~ 5V indicates normal operation.
Status voltage ~ (2-3)V indicates that the device is in current-limiting mode.
Status voltage < 1V indicates that the device is in thermal shutdown.
, in order not to compromise the load current during normal operation. The design
DS
= 5V:
IN
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ZXMS6002G
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ZXMS6002G
Absolute maximum ratings
Parameter Symbol Limit Unit
Continuous drain-source voltage V
Drain-source voltage for short circuit protection V
=5V V
IN
Drain-source voltage for short circuit protection
=10V
V
IN
Continuous input voltage V
Peak input voltage V
Operating temperature range T
Storage temperature range T
Power dissipation @ T
amb
=25°C
Continuous drain current @ V
Continuous drain current @ V
Continuous source current (body diode)
Pulsed source current (body diode)
(a)
=10V; T
IN
=5V; T
IN
(b)
amb
amb
=25°C
=25°C
(a)
(a)
(a)
Unclamped single pulse inductive energy E
Load dump protection V
Electrostatic discharge (human body model) V
DS
DS(SC)
V
DS(SC)
IN
IN
, -40 to +150 °C
j
stg
P
D
I
D
I
D
I
S
I
S
AS
LoadDump
ESD
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 40/150/56
60 V
36 V
20 V
-0.2 ... +10 V
-0.2 ... +20 V
-55 to +150 °C
2.5 W
1.6 A
1.4 A
3A
4.7 A
550 mJ
80 V
4000 V
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(b) For a device surface mounted on FR4 board as (a) and measured at t<=10s.
(a)
(b)
R
R
⍜JA
⍜JA
50 °C/W
28 °C/W
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Characteristics
ZXMS6002G
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ZXMS6002G
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter Symbol Min. Typ. Max. Unit Conditions
Static characteristics
Drain-source clamp voltage V
Off state drain current I
Off state drain current I
Input threshold voltage
(*)
Input current I
Input current I
Input current I
Static drain-source on-state
DS(AZ)
DSS
DSS
V
IN(th)
IN
IN
IN
R
DS(on)
60 70 75 V ID=10mA
0.1 3 AVDS=12V, VIN=0V
315AVDS=32V, VIN=0V
12.1 VVDS=VGS, ID=1mA
0.7 1.2 mA VIN=+5V
1.5 2.7 mA VIN=+7V
47mAV
=+10V
IN
520 675 m⍀ VIN=5V, ID=0.7A
resistance
Static drain-source on-state
R
DS(on)
385 500 m⍀ VIN=10V, ID=0.7A
resistance
Current limit
Current limit
(†)
(†)
I
D(LIM)
I
D(LIM)
0.7 1.0 1.5 A VIN=5V, VDS>5V
1.0 1.8 2.3 A VIN=10V, VDS>5V
Dynamic characteristics
Turn-off time (V
to 90% ID)t
IN
Slew rate on (70 to 50% V
Slew rate off (50 to 70% V
Protection functions
(‡)
Required input voltage for
off
)-dVDS/dt
DD
)DVDS/dt
DD
V
PROT
on
on
4.5 V
13 20 sRL=22⍀, VIN=10V to
0V, V
DD
=12V
820V/sRL=22⍀, VIN=0 to
10V, V
DD
3.2 10 V/sRL=22⍀, VIN=10V to
0V, V
DD
=12V
over temperature protection
Thermal overload trip
T
JT
150 175 °C
temperature
Thermal hysteresis 1 °C
Unclamped single pulse
inductive energy
=25°C
T
j
Unclamped single pulse
inductive energy
=150°C
T
j
E
AS
E
AS
550 mJ I
200 mJ I
D(ISO
V
DD
D(ISO
V
DD
)=0.7A,
=32V
)=0.7A,
=32V
=12V
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ZXMS6002G
NOTES:
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter Symbol Min. Typ. Max. Unit Conditions
Status flag
Normal operation V
Current limit operating V
Thermal shutdown activated V
Normal operation V
Current limit operation V
Thermal shutdown activated V
STATUS
STATUS
STATUS
STATUS
STATUS
STATUS
4.95 V VIN = 5V
2.5 V VIN = 5V
0.2 1 V VIN = 5V
8.0 V VIN = 10V
3.0 V VIN = 10V
0.35 1 V VIN = 10V
Inverse diode
Source drain voltage V
(*) Protection features may operate outside spec for VIN<4.5V.
(†) The drain current is limited to a reduced value when Vds exceeds a safe level
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
SD
1VV
=0V, -ID=1.4A,
IN
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Typical characteristics
ZXMS6002G
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Package outline - SOT223
ZXMS6002G
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC
A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
D 6.30 6.70 0.248 0.264 - - - - -
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXMS6002G
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labelling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
representation relating to the products or services concerned.
Terms and Conditions
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding
regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to
reduce the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview” Future device intended for production at some point. Samples may be available
“Active” Product status recommended for new designs
“Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs”
“Obsolete” Production has been discontinued
Datasheet status key:
“Draft version” This term denotes a very early datasheet version and contains highly provisional information, which
“Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
“Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to
Zetex sales offices
Europe
Zetex GmbH
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Balanstraße 59
D-81541 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
© 2007 Published by Zetex Semiconductors plc
Device is still in production to support existing designs and production
may change in any manner without notice.
However, changes to the test conditions and specifications may occur, at any time and without notice.
specifications may occur, at any time and without notice.
Americas
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Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
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Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
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