Diodes ZXMS6001N3 User Manual

ZXMS6001N3 60V N-channel self protected enhancement mode

INTELLIFETTM MOSFET

Summary

Continuous drain source voltage VDS = 60V

On-state resistance 675mΩ

Max nominal load current (a) 1.1A (V

Min nominal load current (c) 0.7A (V

Clamping Energy 550mJ

= 5V)

IN

= 5V)

IN

Description

Low input current self protected low side MOSFET intended for Vin=5V applications. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch.

Note:

The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is recommended for best thermal performance.

Features

• Short circuit protection with auto restart

• Over voltage protection (active clamp)

• Thermal shutdown with auto restart

• Over-current protection

• Input protection (ESD)

• Load dump protection (actively protects load)

• Low input current

S

D

IN

SOT223

Ordering information

Device Package Part mark Reel size

(inches)

ZXMS6001N3TA SOT223 ZXMS6001 7 12 embossed 1,000

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Tape width

(mm)

Quantity

per reel

Functional block diagram

ZXMS6001N3

Over Voltage Protection

IN

Human body ESD protection

Over current protection

Logic

Over temperature protection

dV/dt limitation

Applications and information

• Especially suited for loads with a high in-rush current such as lamps and motors.

• All types of resistive, inductive and capacitive loads in switching applications.

D

S

• µC compatible power switch for 12V and 24V DC applications.

• Automotive rated.

• Replaces electromechanical relays and discrete circuits.

Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low Vds, in order not to compromise the load current during normal operation. The design max DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the products ability to self protect itself at low V

DS

.

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ZXMS6001N3

Absolute maximum ratings

Parameter Symbol Limit Unit

Continuous Drain-Source Voltage V

Drain-Source Voltage for short circuit protection V

= 5V V

IN

Continuous Input Voltage V

Peak Input Voltage V

Continuous Input Current

DS

DS(SC)

IN

I

IN

-0.2V=VIN=10V V

<-0.2V or VIN>10V

IN

Operating Temperature Range T

Storage Temperature Range T

Power Dissipation at T

=25°C

A

=25°C

A

Continuous Drain Current @ V

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

(a)

(c)

=5V; TA=25°C

IN

=5V; TA=25°C

IN

(b)

(a)

(c)

(a)

Unclamped single pulse inductive energy E

Load dump protection V

Electrostatic Discharge (Human Body Model) V

,

j

stg

P

D

P

D

I

D

I

D

I

S

I

S

AS

LoadDump

ESD

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 40/150/56

60 V

36 V

-0.2 ... +10 V

-0.2 ... +20 V

mA

No limit

| I

| ≤2

IN

-40 to +150

-55 to +150

1.5 W

0.6 W

1.1 A

0.7 A

2.0 A

3.3 A

550 mJ

80 V

4000 V

°C

Thermal resistance

Parameter Symbol Value Unit

Junction to ambient

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight

copper. Allocation of 6cm

isolated. (b) For a device surface mounted on FR4 board as (a) and measured at t<=10s. (c) For a device surface mounted on FR4 board with the minimum copper required for electrical connections.

(a)

(b)

(c)

2

copper 33% to source tab and 66% to drain pin with source tab and drain pin electrically

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R

⍜JA

83 °C/W

45 °C/W

208 °C/W