Diodes ZXMP7A17GQ User Manual

Product Summary

V

R

(BR)DSS

-70V

DS(on)

160mΩ @ V

250mΩ @ VGS= -4.5V

= -10V

GS

T

A

Description

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Applications

 Motor Control

 Transformer Driving Switch

ADVANCE INFORMATION

 DC-DC Converters

 Power Management Functions

 Uninterrupted Power Supply

SOT223

Top View

I

D

= +25°C

-2.6A

-1.6A



Green

Features and Benefits

 100% Unclamped Inductive Switch (UIS) test in production

 Low On-Resistance

 Fast Switching Speed

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Available

Mechanical Data

 Case: SOT223

 Case Material: Molded Plastic, “Green” Molding Compound.

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals Connections: See diagram below

 Terminals: Finish - Matte Tin annealed over Copper lead frame.

 Weight: 0.112 grams (approximate)

Pin Out - Top View

ZXMP7A17GQ

70V P-CHANNEL ENHANCEMENT MODE MOSFET

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

Equivalent Circuit

e3

Ordering Information (Note 4 & 5)

Part Number Qualification Case Packaging

ZXMP7A17GQTA Automotive SOT223 1,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

Marking Information

ZXMP7A17GQ

Document Number DS36688 Rev. 2 - 2

ZXMP
7A17

www.diodes.com

ZXMP7A17 = Product Type Marking Code

1 of 6

December 2013

© Diodes Incorporated

)

r

r

g

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

V

V

GS

GS

= 10V

= 10V
Continuous Source Current (Body Diode) (Note 7)
Pulsed Source Current (Body Diode) (Note 8)

Thermal Characteristics (@T

Characteristic Symbol Value Unit

Power Dissipation
Linear Derating Factor

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

V

DSS

V
(Note 7)
TA = +70°C (Note 7)

GS

I

D

(Note 6) -2.6
(Note 8)

= +25°C, unless otherwise specified.)

A

IDM

I

S

I

SM

(Note 6)

P

D

(Note 7)

(Note 6)
(Note 7) 34

R

θJA

T

, T

J

STG

ZXMP7A17GQ

-70 V

20

-3.7

-2.9

-9.6 A

-4.8 A

-9.6 A

2

16

3.9
31

62.5

-55 to +150

V

A

W

mW/C

C/W

C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

70

 
 
 

V

ID = -250μA, VGS= 0V

-1 µA

100 nA

VDS= -70V, VGS= 0V
VGS= 20V, VDS= 0V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 9)

Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)

V

R

DS(ON)

V

GS(th

g

fs

SD

t

r

Q

r

-1

 








 

0.16

0.25

4.4



V

Ω

S

-0.85 -0.95 V

29.8

38.5




ns

nC

ID= -250µA, VDS= VGS
V

= -10V, ID= -2.1A

GS

V

= -4.5V, ID= -1.7A

GS

VDS= -15V, ID= -2.1A
IS= -2A, VGS= 0V

= -2.1A, di/dt= 100A/µs

I

S

DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)

Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

7. Same as note (6), except the device is measured at t  5 sec.

8. Same as note (6), except the device is pulsed with D= 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.

9. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%

10. For design aid only, not subject to production testing.

11. Switching characteristics are independent of operating junction temperatures.

C



iss

C



oss

C



rss

Q



Q



Q



s

Q



d

t



D(on

t



t



D(off

t



f

635

52

42.5

9.6
18

1.77

3.66

2.5

3.4

27.9
8














pF
pF
pF
nC
nC
nC
nC

ns
ns
ns
ns

= -40V, VGS= 0V

V

DS

f= 1MHz

VGS= -5V

= -10V

V

GS

V

= -35V, VGS= -10V

DD

I

= -1A, RG  6Ω

D

V

DS

I

= -2.1A

D

= -35V

ZXMP7A17GQ

Document Number DS36688 Rev. 2 - 2

2 of 6

www.diodes.com

December 2013

© Diodes Incorporated