Diodes ZXMP6A18DN8 User Manual

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Diodes Incorporated
ZXMP6A18DN8
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-60V
R
55m @ V
DS(on)
Max
= -10V
GS
T
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Applications
Disconnect Switches
Motor Drive
SO-8
G1
S2
G2
Top View
I
D
= +25°C
-4.8A
Top View
Features
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Low Profile SOIC Package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
Weight: 0.074 grams (approximate)
D1S1
e3
1
D1
D2
1
G2
D2
S1
Equivalent Circuit
Ordering Information (Notes 4 & 5)
Product Compliance Case Quantity per reel
ZXMP6A18DN8TA Standard SO-8 500 ZXMP6A18DN8TC Standard SO-8 2,500
ZXMP6A18DN8QTA Automotive SO-8 500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
Marking Information
6A18D
ZXMP6A18D = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 11 = 2011) WW = Week (01 - 53)
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S2
ZXMP6A18DN8
Document Number DS33592 Rev 2 - 2
1 of 8
www.diodes.com
October 2013
© Diodes Incorporated
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Maximum Ratings (@T
= +25°C, unless otherwise specified.)
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Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GS
(Notes 7 & 9)
Continuous Drain Current (VGS = 10V)
TA = +70ºC (Notes 7 & 9)
I
D
(Notes 6 & 9) -3.7
Pulsed Drain Current (Notes 8)
Continuous Source Current (Body Diode) (Notes 7)
Pulsed Source Current (Body Diode) (Notes 8)
Single Pulsed Avalanche Energy (L = 0.1mH) (Note 11)
Single Pulsed Avalanche Current (L = 0.1mH) (Note 11)
I
DM
I
S
I
SM
E
AS
I
AS
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
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Characteristic Symbol Value Unit
(Notes 6 & 9)
Power Dissipation Linear Derating Factor
(Notes 6 & 10)
P
D
(Notes 7 & 9)
(Notes 6 & 9)
Thermal Resistance, Junction to Ambient
(Notes 7 & 10) 69
R
θJA
(Notes 7 & 9) 58
Operating and Storage Temperature Range
Notes: 6. For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 1oz copper in still air conditions.
7. For a dual device surface mounted FR4 PCB measured at t  10 sec.
8. Repetitive rating 25mm x 25mm x 1.6mm FR4 PCB, D = 0.02, pulse width = 300µs – pulse width limited by maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. IAR and EAR rating are based on low frequency and duty cycles to keep T
T
, T
J
STG
= +25°C
J
Diodes Incorporated
ZXMP6A18DN8
-60 V
20
-4.8
-3.8
-23 A
-3.3 A
-23 A
38.2 mJ
27.6 A
1.25 10
1.8 14
2.1 17
100
-55 to +150 °C
Product Line o
V
A
W
mW/°C
°C/W
ZXMP6A18DN8
Document Number DS33592 Rev 2 - 2
2 of 8
www.diodes.com
October 2013
© Diodes Incorporated
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Thermal Characteristics
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ZXMP6A18DN8
ZXMP6A18DN8
Document Number DS33592 Rev 2 - 2
3 of 8
www.diodes.com
October 2013
© Diodes Incorporated
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