Diodes ZXMP6A17N8 User Manual

Product Summary

(BR)DSS

-60V

DS(on)

125mΩ @ V

190mΩ @ V

= -10V

= -4.5V

Description and Applications

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

ADVANCE INFORMATION

• Motor control

• Backlighting

• DC-DC Converters

• Power management functions

SO-8

Top View

= 25°C

-3.4A

-2.8A

Product Line o

Diodes Incorporated

ZXMP6A17N8

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Fast switching speed

• Low input capacitance

• “Green” component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See diagram below

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

Top View

Equivalent Circuit

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMP6A17N8TC See below 13 12 2,500

Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about

Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

ZXMP

6A17

YYWW

ZXMP6A17N8

Document Number DS32076 Rev 1 - 2

ZXMP = Product Type Marking Code, Line 1 6A17 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53)

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ZXMP6A17N8

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source voltage Gate-Source voltage

Continuous Drain current

= 10V

(Note 3) TA = 70°C (Note 3)

DSS

-60 V

±20

-3.42

-2.73

(Note 2) -2.7

Pulsed Drain current

= 10V

(Note 4) Continuous Source current (Body diode) (Note 3) Pulsed Source current (Body diode) (Note 4)

IDM

-15.6 A

-3.4 A

-15.6 A

Thermal Characteristics @T

ADVANCE INFORMATION

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power dissipation Linear derating factor

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead (Note 5)

Operating and storage temperature range

Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

3. Same as note (2), except the device is measured at t ≤ 10 sec.

4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

5. Thermal resistance from junction to solder-point (at the end of the drain lead).

(Note 2)

(Note 3)

(Note 2)

(Note 3) 50

, T

STG

1.56

12.5

2.5 20 80

-55 to 150

mW/°C

°C/W

°C

ZXMP6A17N8

Document Number DS32076 Rev 1 - 2

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Thermal Characteristics

Product Line o

Diodes Incorporated

ZXMP6A17N8

DS(on)

Limited

amb

=25°C

100ms

10ms

1ms

100µs

100m

10m

ADVANCE INFORMATION

Drain Current (A)

-I

Single Pulse

100m 1 10

-VDS Drain-Source Voltage (V)

Safe Operating Area

80 70 60 50 40 30 20 10

Thermal Re sistance (°C/W)

=25°C

amb

D=0.5

D=0.2

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0 0 20 40 60 80 100 120 140 160

Max Pow er Dissipat i o n ( W)

Temperature (°C)

25mm x 25mm

1oz FR4

Derating Curve

Single Pulse

=25°C

100

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

amb

Puls e Width (s)

Pulse Power Dissipation

ZXMP6A17N8

Document Number DS32076 Rev 1 - 2

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