Diodes ZXMP6A17E6Q User Manual

ZXMP6A17E6Q

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Product Summary

V

(BR)DSS

R

DS(on)

Max

ID Max

TA = +25°C

(Note 7)

-60V

125mΩ @ VGS = -10V

-3.0 A

190mΩ @ VGS = -4.5V

-2.4 A

Description

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications

 DC-DC Converters  Power management functions  Disconnect switches  Motor control

Features and Benefits

 Low on-resistance  Fast switching speed  Low threshold  Low gate drive  Low input capacitance

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Available

Mechanical Data

 Case: SOT26  Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020  Terminals Connections: See diagram below

 Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

 Weight: 0.018 grams (approximate)

Part Number

Compliance

Case

Quantity per reel

ZXMP6A17E6QTA

Automotive

SOT26

3,000

Pin Out - Top View

Equivalent Circuit

D

S

G

Top View

SOT26

6A17 = Product Type Marking Code

6A17

e3

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Ordering Information (Note 4 & 5)

Note: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the

same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

ZXMP6A17E6Q

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Characteristic

Symbol

Value

Unit

Drain-Source voltage

V

DSS

-60

V

Gate-Source voltage

VGS

20

V

Continuous Drain current

VGS = 10V (Note 7)

I

D

-3.0

A

TA = +70°C (Note 7)

-2.4

(Note 6)

-2.3

Pulsed Drain current

VGS = 10V

(Note 8)

IDM

-13.6

A

Continuous Source current (Body diode)

(Note 7)

IS

-2.5

A

Pulsed Source current (Body diode)

(Note 8)

ISM

-13.6

A

Characteristic

Symbol

Value

Unit

Power dissipation Linear derating factor

(Note 6)

PD

1.1

8.8

W

mW/C

(Note 7)

1.92

15.4

Thermal Resistance, Junction to Ambient (Note 6)

R

θJA

113

C/W

(Note 7)

65

Operating and storage temperature range

TJ, T

STG

-55 to +150

C

Maximum Ratings (@T

Thermal Characteristics (@T

Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

7. Same as note (6), except the device is measured at t  5 sec.

8. Same as note (6), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

= +25°C, unless otherwise specified.)

A

= +25°C, unless otherwise specified.)

A

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1 10 100

10m

100m

1

10

0 25 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

100µ 1m 10m 100m 1 10 100 1k

0

20

40

60

80

100

100µ 1m 10m 100m 1 10 100 1k

1

10

100

10us

100us

100ms

1s

R

DS(ON)

Limited

1ms

P-channel Safe Operating Area

Single Pulse, T

amb

=25°C

DC

10ms

-I

D

Drain Current (A)

-VDS Drain-Source Voltage (V)

Derating Curve

Max Power Dissipation (W)

Temperature (°C)

D=0.2

D=0.5

D=0.1

Transient Thermal Impedance

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

Single Pulse T

amb

=25°C

Pulse Power Dissipation

Maximum Power (W)

Pulse Width (s)

Thermal Characteristics

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Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV

DSS

-60



V

ID = -250μA, VGS = 0V

Zero Gate Voltage Drain Current

I

DSS

 

-1.0

A

VDS = -60V, VGS = 0V

Gate-Source Leakage

I

GSS

 

100

nA

VGS = 20V, VDS = 0V

ON CHARACTERISTICS

Gate Threshold Voltage

V

GS(th)

-1.0  -3.0

V

ID = -250μA, VDS = VGS

Static Drain-Source On-Resistance (Note 9)

R

DS (ON)



0.100

0.125

Ω

VGS = -10V, ID = -2.3A

0.130

0.190

VGS = -4.5V, ID = -1.9A

Forward Transconductance (Notes 9 & 10)

gfs



4.7  S

VDS = -15V, ID = -2.3A

Diode Forward Voltage (Note 9)

VSD



-0.85

-0.95

V

IS = -2.0A, VGS = 0V

Reverse recovery time (Note 10)

trr



25.1  ns

IF = -1.7A, di/dt = 100A/μs Reverse recovery charge (Note 10)

Qrr



27.2  nC

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

C

iss



637  pF

VDS = -30V, VGS = 0V f = 1.0MHz

Output Capacitance

C

oss



70  pF

Reverse Transfer Capacitance

C

rss



53  pF

Total Gate Charge (Note 11)

Qg



9.8 nC

VGS = -5.0V

VDS = -30V ID = -2.3A Total Gate Charge (Note 11)

Qg



17.7  nC

VGS = -10V Gate-Source Charge (Note 11)

Qgs



1.6  nC

Gate-Drain Charge (Note 11)

Qgd



4.4  nC

Turn-On Delay Time (Note 11)

t

D(on)



2.6  ns

VDD = -30V, VGS = -10V ID = -1.0A, RG  6.0Ω Turn-On Rise Time (Note 11)

tr



3.4  ns

Turn-Off Delay Time (Note 11)

t

D(off)



26.2  ns

Turn-Off Fall Time (Note 11)

tf



11.3  ns

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Notes: 9. Measured under pulsed conditions. Pulse width  300μs; duty cycle  2%

10. For design aid only, not subject to production testing.

11. Switching characteristics are independent of operating junction temperatures.

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0.1 1 10

0.01

0.1

1

10

0.1 1 10

0.01

0.1

1

10

1 2 3 4

0.1

1

10

-50 0 50 100 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.1 1 10

0.01

0.1

1

10

100

0.2 0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

10

10V

2V

3.5V

-V

GS

2.5V

4V

3V

Output Characteristics

T = 25°C

-V

GS

-I

D

Drain Current (A)

-VDS Drain-Source Voltage (V)

5V

1.5V

3.5V 3V

2V

4.5V

10V

2.5V

Output Characteristics

T = 150°C

-I

D

Drain Current (A)

-VDS Drain-Source Voltage (V)

5V

Typical Transfer Characteristics

-VDS = 10V

T = 25°C

T = 150°C

-I

D

Drain Current (A)

-VGS Gate-Source Voltage (V)

Normalised Curves v Temperature

R

DS(on)

VGS = -10V ID = - 2.3A

V

GS(th)

VGS = V

DS

ID = -250uA

Normalised R

DS(on)

and V

GS(th)

Tj Junction Temperature (°C)

VGS= 0V

4V

10V

3V

2V

3.5V

2.5V

On-Resistance v Drain Current

T = 25°C

-V

GS

R

DS(on)

Drain-Source On-Resistance



-ID Drain Current (A)

5V

T = 150°C

T = 25°C

Source-Drain Diode Forward Voltage

-VSD Source-Drain Voltage (V)

-I

SD

Reverse Drain Current (A)

Typical Characteristics

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0.1 1 10

0

200

400

600

800

1000

C

RSS

C

OSS

C

ISS

VGS = 0V f = 1MHz

C Capacitance (pF)

-VDS - Drain - Source Voltage (V)

0 2 4 6 8 10 12 14 16 18

0

2

4

6

8

10

ID = -2.3A VDS = -30V

Gate-Source Voltage v Gate Charge

Capacitance v Drain-Source Voltage

Q - Charge (nC)

-V

GS

Gate-Source Voltage (V)

Typical Characteristics (cont.)

Test Circuits

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SOT26

Dim

Min

Max

Typ

A

0.35

0.50

0.38 B 1.50

1.70

1.60

C

2.70

3.00

2.80

D



0.95

H

2.90

3.10

3.00

J

0.013

0.10

0.05

K

1.00

1.30

1.10 L 0.35

0.55

0.40

M

0.10

0.20

0.15



0°

8°



All Dimensions in mm

Dimensions

Value (in mm)

Z

3.20 G 1.60 X 0.55 Y 0.80

C1

2.40

C2

0.95

A

M

J

L

D

B C

H

K

X

Z

Y

C1

C2

G

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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Diodes ZXMP6A17E6Q User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual