Diodes ZXMP6A17E6 User Manual

A

f

D

Product Summary

V

R

(BR)DSS

-60V

125mΩ @ V

190mΩ @ VGS = -4.5V

DS(on)

Max

= -10V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

• DC-DC Converters

ADVANCE INFORMATION

• Power management functions

• Disconnect switches

• Motor control

SOT-26

Top View

Max

I

D

T

= 25°C

A

(Note 5)

-3.0 A

-2.4 A

D

G

Features and Benefits

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• Low input capacitance

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic, UL Flammability Classification

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

• Weight: 0.018 grams (approximate)

Pin Out - Top View

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Diodes Incorporated

ZXMP6A17E6

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Rating 94V-0

Solderable per MIL-STD-202, Method 208

D

G

S

Equivalent Circuit

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMP6A17E6TA 6A17 7 8 3,000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

ZXMP6A17E6

Document Number: DS33589 Rev. 2 - 2

6A17

www.diodes.com

6A17 = Product Type Marking Code

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ZXMP6A17E6

Maximum Ratings @T

Drain-Source voltage Gate-Source voltage

Continuous Drain current

Pulsed Drain current Continuous Source current (Body diode) (Note 5) Pulsed Source current (Body diode) (Note 6)

Thermal Characteristics @T

Power dissipation Linear derating factor

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient Operating and storage temperature range

Notes: 4. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

5. Same as note (4), except the device is measured at t ≤ 5 sec.

6. Same as note (4), except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

V

DSS

V

(Note 5)

= 10V

V

GS

= 10V

V

GS

Characteristic Symbol Value Unit

TA = 70°C (Note 5) (Note 4) -2.3 (Note 6)

= 25°C unless otherwise specified

A

(Note 4) (Note 5)

(Note 4) (Note 5) 65

GS

I

D

IDM

I

S

I

SM

P

D

R

JA

θ

T

, T

J

STG

-60 V

±20

-3.0

-2.4

-13.6 A

-2.5 A

-13.6 A

1.1

8.8

1.92

15.4 113

-55 to 150

V

A

W

mW/°C

°C/W

°C

ZXMP6A17E6

Document Number: DS33589 Rev. 2 - 2

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Thermal Characteristics

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ZXMP6A17E6

R

DS(ON)

10

Limited

1

DC

1s

100m

Drain Current (A)

10m

D

ADVANCE INFORMATION

-I

Single Pulse, T

10ms

100ms

110100

amb

=25°C

1ms

100us

10us

-VDS Drain-Source Voltage (V)

P-channel Safe Op erating Area

100

80

D=0.5

60 40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

1.2

1.0

0.8

0.6

0.4

0.2

0.0 0 25 50 75 100 125 150

Max Pow e r Dissipat i o n ( W)

Temperature (°C)

Derating Curve

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Single Pulse T

=25°C

amb

Pulse P ower Dissipat ion

ZXMP6A17E6

Document Number: DS33589 Rev. 2 - 2

3 of 8

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December 2010