Diodes ZXMP6A17E6 User Manual

A

f

D

Product Summary

V

R

(BR)DSS

-60V

125mΩ @ V

190mΩ @ VGS = -4.5V

DS(on)

Max

= -10V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.

• DC-DC Converters

ADVANCE INFORMATION

• Power management functions

• Disconnect switches

• Motor control

SOT-26

Top View

Max

I

D

T

= 25°C

A

(Note 5)

-3.0 A

-2.4 A

D

D

G

Features and Benefits

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• Low input capacitance

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic, UL Flammability Classification

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

• Weight: 0.018 grams (approximate)

Pin Out - Top View

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ZXMP6A17E6

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Rating 94V-0

Solderable per MIL-STD-202, Method 208

D

D

G

S

S

Equivalent Circuit

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMP6A17E6TA 6A17 7 8 3,000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

ZXMP6A17E6

Document Number: DS33589 Rev. 2 - 2

6A17

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6A17 = Product Type Marking Code

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Maximum Ratings @T

Drain-Source voltage
Gate-Source voltage

Continuous Drain current

Pulsed Drain current
Continuous Source current (Body diode) (Note 5)
Pulsed Source current (Body diode) (Note 6)

Thermal Characteristics @T

Power dissipation
Linear derating factor

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient
Operating and storage temperature range

Notes: 4. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

5. Same as note (4), except the device is measured at t ≤ 5 sec.

6. Same as note (4), except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

V

DSS

V

(Note 5)

= 10V

V

GS

= 10V

V

GS

Characteristic Symbol Value Unit

TA = 70°C (Note 5)
(Note 4) -2.3
(Note 6)

= 25°C unless otherwise specified

A

(Note 4)
(Note 5)

(Note 4)
(Note 5) 65

GS

I

D

IDM

I

S

I

SM

P

D

R

JA

θ

T

, T

J

STG

-60 V

±20

-3.0

-2.4

-13.6 A

-2.5 A

-13.6 A

1.1

8.8

1.92

15.4
113

-55 to 150

V

A

W

mW/°C

°C/W

°C

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Thermal Characteristics

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ZXMP6A17E6

R

DS(ON)

10

Limited

1

DC

1s

100m

Drain Current (A)

10m

D

ADVANCE INFORMATION

-I

Single Pulse, T

10ms

100ms

110100

amb

=25°C

1ms

100us

10us

-VDS Drain-Source Voltage (V)

P-channel Safe Op erating Area

100

80

D=0.5

60
40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 25 50 75 100 125 150

Max Pow e r Dissipat i o n ( W)

Temperature (°C)

Derating Curve

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Single Pulse
T

=25°C

amb

Pulse P ower Dissipat ion

ZXMP6A17E6

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ZXMP6A17E6

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

ON CHARACTERISTICS

Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)

V

GS(th

R

DS (ON)

Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)

V
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)

ADVANCE INFORMATION

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C
C
C

Total Gate Charge (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)

t

Q

Q

D(on

Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)

t

D(off

Turn-Off Fall Time (Note 9)

Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%

8. For design aid only, not subject to production testing.

9. Switching characteristics are independent of operating junction temperatures.

-60

DSS

⎯ ⎯

DSS

⎯ ⎯

GSS

-1.0

⎯

g

fs

SD

t

r

Q

r

iss
oss
rss

Q
Q

s
d

t

t

f

⎯
⎯

⎯

⎯
⎯
⎯

⎯

⎯
⎯
⎯
⎯
⎯
⎯
⎯

⎯ ⎯

-1.0

±100

⎯

-3.0 V

0.100 0.125

0.130 0.190

4.7

⎯

V
μA
nA

Ω

S

-0.85 -0.95 V

25.1

27.2

637

70
53

9.8

17.7

1.6

4.4

2.6

3.4

26.2

11.3

⎯
⎯

⎯
⎯
⎯

⎯

⎯
⎯
⎯
⎯
⎯
⎯
⎯

ns

nC

pF
pF
pF
nC
nC
nC
nC

ns
ns
ns
ns

ID = -250μA, VGS = 0V

= -60V, VGS = 0V

V

DS

V

= ±20V, VDS = 0V

GS

ID = -250μA, VDS = VGS
V

= -10V, ID = -2.3A

GS

V

= -4.5V, ID = -1.9A

GS

VDS = -15V, ID = -2.3A
IS = -2A, VGS = 0V

I

= -1.7A, di/dt = 100A/μs

F

V

= -30V, VGS = 0V

DS

f = 1MHz
VGS = -5.0V

V

= -30V

DS

I

= -10V

V

GS

V

= -30V, VGS = -10V

DD

I

= -1A, RG ≅ 6.0Ω

D

= -2.3A

D

ZXMP6A17E6

Document Number: DS33589 Rev. 2 - 2

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Typical Characteristics

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ZXMP6A17E6

T = 25°C

10

1

0.1

Drain Current (A)

D

-I

ADVANCE INFORMATION

0.01

0.1 1 10

10V

5V

4V

3.5V
3V

2.5V

2V

-V

Drain Current (A)

GS

D

-I

-VDS Drain-Source Voltage (V)

Outpu t C h aracteristics

T = 150°C

10

1

0.1

0.01

0.1 1 10

-VDS Drain-Source Voltage (V)

Outpu t C h aracteristics

10V

5V

4.5V

3.5V
3V

2.5V

2V

-V

1.5V

GS

1.8

DS

VGS = -10V
ID = - 2.3A

R

DS(on)

V

GS(th)

10

1

Drain Current (A)

0.1

D

-I

T = 150°C

T = 25°C

-VDS = 10V

1234

-VGS Gate-Source Voltage (V)

Typical Transfer Characteristics

1.6

GS(th)

1.4

and V

1.2

DS(on)

1.0

0.8

0.6

Normalised R

-50 0 50 100 150

VGS = V
ID = -250uA

Tj Junction Temperature (°C)

Normalised Curves v Temperature

100

10

2V

2.5V
3V

1

3.5V

-V

GS

4V

5V

10

T = 150°C

1

T = 25°C

0.1

0.1

T = 25°C

0.01

Drain-Source On-Resistance (Ω)

0.1 1 10

DS(on)

On-Resistance v D rain Cu rrent

R

-ID Drain Current (A)

ZXMP6A17E6

Document Number: DS33589 Rev. 2 - 2

10V

Reverse Dr ain Current (A)

0.01

SD

-I

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VGS= 0V

0.2 0.4 0.6 0.8 1.0 1.2

Source-Drain Voltage (V)

-V

Sou rce- D rain Diod e Forward Vo ltage

SD

© Diodes Incorporated

December 2010

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Typical Characteristics - continued

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ZXMP6A17E6

ADVANCE INFORMATION

Test Circuits

1000

VGS = 0V

C

f = 1MHz

RSS

800

600

400

C

ISS

C

OSS

200

C Capacitance (pF)

0

0.1 1 10

-VDS - Drain - Source Voltage (V)

Capacitance v Drain-Source Voltage

Q

G

10

8

6

4

2

Gate-Source Voltage (V)

0

GS

0 2 4 6 8 1012141618

-V

Q - Charge (nC)

ID = -2.3A
VDS = -30V

Gate-Source Vo ltage v Gate Ch arge

urrent

regulator

12V

0.2␮F

50k

Same as

D.U.T

Q

V

GS

G

Q

GD

I

G

D.U.T

V

GS

V

DS

I

D

Charge

Basicgatechargewaveform

t

trt

t

(on)

d(of )

t

d(on)

r

t

(on)

Switching time waveforms

V

90%

10%

V

DS

GS

Gate charge test circuit

R

D

V

GS

R

G

Pulse width ⬍1␮S
Duty factor 0.1%

Switching time test circuit

V

DS

V

DD

ZXMP6A17E6

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Package Outline Dimensions

ADVANCE INFORMATION

K

J

Suggested Pad Layout

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ZXMP6A17E6

A

SOT-26

B C

H

M

D

G

Z

Y

L

C2

C2

C1

X

Dim Min Max Typ

A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D

⎯ ⎯

H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15

0° 8°

α

All Dimensions in mm

Dimensions Value (in mm)

Z 3.20

G 1.60

X 0.55

Y 0.80
C1 2.40
C2 0.95

0.95

⎯

ZXMP6A17E6

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

ADVANCE INFORMATION

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2010, Diodes Incorporated

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

Diodes Incorporated

ZXMP6A17E6

ZXMP6A17E6

Document Number: DS33589 Rev. 2 - 2

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