Diodes ZXMP6A17DN8 User Manual

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ZXMP6A17DN8

DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

-60V

R

125mΩ @ V

190mΩ @ VGS = -4.5V

DS(on)

Max

= -10V

GS

(Notes 7 & 9)

Description

This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.

Applications

ADVANCE INFORMATION

 DC-DC Converters
 Power Management functions
 Disconnect Switches
 Motor Control

SO-8

G1

S2

G2

Top View

I

D

T

= 25°C

A

-3.4A

-2.8A

Top View

Features

 Low On-Resistance
 Fast Switching Speed
 Low Threshold
 Low Gate Drive
 Low Profile SOIC Package
 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
 PPAP capable (Note 4)

Mechanical Data

 Case: SO-8
 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Matte Tin Finish; Solderable per MIL-STD-202,

Method 208

 Weight: 0.074 grams (approximate)

D1S1

e3

1

D1
D2

1

G2

D2

S1

Equivalent Circuit

Ordering Information (Notes 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMP6A17DN8TA AEC-Q101 ZXMP6A17D 7 12 500

ZXMP6A17DN8QTC Automotive ZXMP6A17D 13 12 2,500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

Marking Information

ZXMP6A17D = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 11 = 2011)
WW = Week (01 - 53)

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ZXMP6A17DN8

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

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Characteristic Symbol Value Unit

Drain-Source voltage
Gate-Source voltage

V

DSS

V

GS

(Notes 7 & 9)

Continuous Drain current

V

GS

= 10V

(Notes 7 & 9)

I

D

TA = +70ºC

(Notes 6 & 9) -2.7
Pulsed Drain current (Notes 8 & 9)
Continuous Source current (Body diode) (Notes 7 & 9)
Pulsed Source current (Body diode) (Notes 8 & 9)

I

DM

I

S

I

SM

Thermal Characteristics (@T

ADVANCE INFORMATION

Characteristic Symbol Value Unit

= +25°C, unless otherwise specified.)

A

(Notes 6 & 9)
Power dissipation

Linear derating factor

(Notes 6 & 10)

P

D

(Notes 7 & 9)

(Notes 6 & 9)
Thermal Resistance, Junction to Ambient

(Notes 6 & 10) 70

R

θJA

(Notes 7 & 9) 60
Thermal Resistance, Junction to Lead (Notes 9 & 11)
Operating and storage temperature range

Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high cov erage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

7. Same as note (6), except the device is measured at t  10 sec.

8. Same as note (6), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

9. For a dual device with one active die.

10. For a device with two active die running at equal power.

11. Thermal resistance from junction to solder-point.

R

θJL

T

, T

J

STG

Diodes Incorporated

ZXMP6A17DN8

-60 V

20

-3.42

-2.73

-15.6 A

-3.4 A

-15.6 A

1.25

10.0

1.81

14.5

2.15
17

100

51.68

-55 to 150 °C

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V

A

W

mW/°C

°C/W

ZXMP6A17DN8

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Thermal Characteristics

R

DS(on)

10

Limited

1

100m

10m

Drain Current (A)

D

1m

-I

100m 1 10

ADVANCE INFORMATION

DC

1s

100ms

Single Pulse

T

=25°C

amb

10ms

1ms

100µs

-VDS Drain-Source Voltage (V)

Safe Operating Area

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1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 20 40 60 80 100 120 140 160

Max Pow er Dissipat i o n (W )

Temperature (°C)

25mm x 25mm

1oz FR4

Derating Curve

ZXMP6A17DN8

80
70
60
50
40
30
20
10

Thermal Re sistance (°C/W)

T

=25°C

amb

D=0.5

D=0.2

0

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Transient Thermal Impedance

D=0.1

Single Pulse

D=0.05

Single Pulse

T

=25°C

100

10

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

amb

Puls e Width (s)

Pulse Power Dissipation

ZXMP6A17DN8

Document Number DS33588 Rev 4 - 2

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