Diodes ZXMP6A16DN8 User Manual

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D
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Product Summary
I
D
TA = +25°C
(Notes 4 & 6)
-3.9A
-3.2A
V
R
(BR)DSS
-60V
Max Package
DS(ON)
85mΩ @ V
125mΩ @ VGS = -4.5V
= -10V
GS
SO-8
Description
This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
SO-8
Top View
G1
S2
G2
Top View
ZXMP6A16DN8
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Low Profile SOIC Package
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method
Weight: 0.074 grams (approximate)
D1S1
208
e3
1
2
D1
D2
1
G2
D2
S1
Equivalent Circuit
S2
Ordering Information
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMP6A16DN8TA ZXMP6A16D 7 12 500
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Marking Information
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
ZXMP6A16D = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 11 = 2011) WW = Week (01 - 53)
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ZXMP6A16DN8
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source voltage Gate-Source voltage (Note 4)
(Notes 6 & 8)
Continuous Drain current
V
GS
= 10V
TA = +70°C (Notes 6 & 8)
V
DSS
V
GS
I
D
-60 V
±20
V
-3.9
-3.1
A
(Notes 5 & 8) -2.9 Pulsed Drain current (Notes 7 & 8) Continuous Source current (Body diode) (Notes 6 & 8) Pulsed Source current (Body diode) (Notes 7 & 8)
I
DM
I
S
I
SM
-18.3 A
-3.2 A
-18.3 A
Thermal Characteristics
Characteristic Symbol Value Unit
(Notes 5 & 8) Power dissipation
Linear derating factor
(Notes 5 & 9)
P
D
(Notes 6 & 8)
(Notes 5 & 8) Thermal Resistance, Junction to Ambient
(Notes 5 & 9) 70
R
JA
θ
(Notes 6 & 8) 60 Thermal Resistance, Junction to Lead (Notes 8 & 10) Operating and storage temperature range
Notes: 4. AEC-Q101 VGS maximum is ±16V.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t 10 sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.
8. For a dual device with one active die.
9. For a device with two active die running at equal power.
10. Thermal resistance from junction to solder-point.
R
JL
T
, T
J
STG
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
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1.25
10.0
1.81
14.5
2.15 17
100
48.85
-55 to 150
W
mW/°C
°C/W
°C
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Thermal Characteristics
R
DS(on)
10
Limited
1
DC
100m
Drain Current (A)
10m
D
-I
One active die
100m 1 10 100
1s
Single Pulse
=25°C
T
amb
100ms
-VDS Drain-Sour ce Voltage (V)
Safe Operating Area
110 100
90 80 70 60 50 40 30 20 10
Thermal Resistance (°C/W)
T
=25°C
amb
One active die
D=0.5
D=0.2
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
10ms
1ms
D=0.1
100µs
Single Pulse
D=0.05
ZXMP6A16DN8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
One active die
0.4
0.2
0.0 0 20 40 60 80 100 120 140 160
Max Power Dissipat i on (W)
Temperature (°C)
Two active die
Derating Curve
Single Pulse
=25°C
T
100
10
1
Maximum Power (W)
100µ 1m 10m 100m 1 10 100 1k
amb
One active die
Pulse Width (s)
Pulse Power Dissipation
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
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ZXMP6A16DN8
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
-60
V
-1.0 µA
±100
nA
ID = -250µA, VGS = 0V V
= -60V, VGS = 0V
DS
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage Static Drain-Source On-Resistance (Note 11) Forward Transconductance (Notes 11 & 12)
Diode Forward Voltage (Note 11) Reverse recovery time (Note 12) Reverse recovery charge (Note 12)
V
GS(th)
R
DS (ON)
g
V
Q
t
fs
SD rr
rr
-1.0
⎯ ⎯ ⎯
7.2
85
125
-0.85 -0.95 V
29.2
39.6
⎯ ⎯
V
ID = -250µA, VDS = VGS
= -10V, ID = -2.9A
V
m
GS
V
= -4.5V, ID = -2.4A
GS
S
VDS = -15V, ID = -2.9A IS = -3.4A, VGS = 0V, TJ = +25°C
ns
I
= -2A, di/dt = 100A/µs,
S
T
nC
= +25°C
J
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 13) Total Gate Charge (Note 13) Gate-Source Charge (Note 13) Gate-Drain Charge (Note 13) Turn-On Delay Time (Note 13) Turn-On Rise Time (Note 13) Turn-Off Delay Time (Note 13) Turn-Off Fall Time (Note 13)
Notes: 11. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
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1021
83.1
56.4
12.1
24.2
2.5
3.7
3.5
4.1 35 10
⎯ ⎯ ⎯
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯
pF pF pF nC nC nC nC ns ns ns ns
V
= -30V, VGS = 0V,
DS
f = 1MHz VGS = -5V
V
= -10V
GS
= -30V, VGS = -10V,
V
DD
I
= -1A, RG ≅ 6.0Ω
D
= -30V,
V
DS
= -2.9A
I
D
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Typical Characteristics
T = 25°C
10
1
Drain Current (A)
D
-I
0.1
0.1 1 10
-VDS Drain-Source Voltage (V)
Outpu t C h aracteristics
10
T = 150°C
1
Drain Current (A)
D
-I
0.1 234
-VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
10V
5V
T = 25°C
-VDS = 10V
4.5V 4V
3.5V 3V
2.5V
ZXMP6A16DN8
T = 150°C
10V
10
1
0.1
Drain Current (A)
-V
GS
D
-I
0.01
0.1 1 10
-VDS Drain-Source Voltage (V)
5V
4V
3.5V 3V
2.5V
-V
2V
GS
Outpu t C h aracteristics
1.8
1.6
GS(th)
1.4
and V
1.2
DS(on)
1.0
0.8
0.6
Normalised R
0.4
-50 0 50 100 150
Tj Junction Temperature (°C)
VGS = -10V ID = - 2.9A
VGS = V
DS
ID = -250uA
R
DS(on)
V
GS(th)
Normalised Cu rve s v Tem p eratu re
10
2.5V
1
-V
GS
3V
T = 2 5°C
3.5V 4V
4.5V
10
T = 150°C
1
T = 25°C
0.1
5V
0.1
10V
Drain-Source On-Resistance (Ω)
0.1 1 10
DS(on)
R
-ID Drain Curren t (A)
On-Resistance v Drain Current
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
www.diodes.com
Reverse Drain Current (A)
SD
-I
0.01
0.4 0.6 0.8 1.0 1.2
Source-Drain Voltage (V)
-V
SD
Source-Drain Diode Forward Voltage
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Typical Characteristics (cont.)
1400 1200 1000
800 600 400 200
C Capacitance (pF)
0
0.1 1 10
C
ISS
-VDS - Drain - Source Voltage (V)
Capac ita nce v D r ain-Source Voltage
Test Circuits
ZXMP6A16DN8
VGS = 0V f = 1MHz
C
OSS
C
RSS
10
ID = -2.9A
8
6
4
2
Gate-Source Voltage (V)
0
0 5 10 15 20
GS
-V
Q - Charge (nC)
VDS = -30V
Gate-Source Voltage v Gate Charge
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
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Package Outline Dimensions
E1
E
A2
A3
e
b
D
A
Suggested Pad Layout
X
C2
Y
A1
h
C1
Detail ‘A’
°
45
L
0.254
Gaug e Plane Seating Plane
7°~9
°
Detail ‘A’
ZXMP6A16DN8
Dim Min Max
Dimensions Value (in mm)
X 0.60
Y 1.55 C1 5.4 C2 1.27
SO-8
A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10 E1 3.85 3.95
e 1.27 Typ h - 0.35 L 0.62 0.82
0° 8°
θ
All Dimensions in mm
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
ZXMP6A16DN8
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
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