Diodes ZXMP6A16DN8 User Manual

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Product Summary

I

D

TA = +25°C

(Notes 4 & 6)

-3.9A

-3.2A

V

R

(BR)DSS

-60V

Max Package

DS(ON)

85mΩ @ V

125mΩ @ VGS = -4.5V

= -10V

GS

SO-8

Description

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications

• DC-DC Converters

• Power Management Functions

• Disconnect Switches

• Motor Control

SO-8

Top View

G1

S2

G2

Top View

ZXMP6A16DN8

DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Fast Switching Speed

• Low Threshold

• Low Gate Drive

• Low Profile SOIC Package

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method

• Weight: 0.074 grams (approximate)

D1S1

208

e3

1

2

D1

D2

1

G2

D2

S1

Equivalent Circuit

S2

Ordering Information

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMP6A16DN8TA ZXMP6A16D 7 12 500

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Marking Information

ZXMP6A16DN8

Document number: DS33586 Rev. 4 - 2

ZXMP6A16D = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 11 = 2011) WW = Week (01 - 53)

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ZXMP6A16DN8

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source voltage Gate-Source voltage (Note 4)

(Notes 6 & 8)

Continuous Drain current

V

GS

= 10V

TA = +70°C (Notes 6 & 8)

V

DSS

V

GS

I

D

-60 V

±20

V

-3.9

-3.1

A

(Notes 5 & 8) -2.9 Pulsed Drain current (Notes 7 & 8) Continuous Source current (Body diode) (Notes 6 & 8) Pulsed Source current (Body diode) (Notes 7 & 8)

I

DM

I

S

I

SM

-18.3 A

-3.2 A

-18.3 A

Thermal Characteristics

Characteristic Symbol Value Unit

(Notes 5 & 8) Power dissipation

Linear derating factor

(Notes 5 & 9)

P

D

(Notes 6 & 8)

(Notes 5 & 8) Thermal Resistance, Junction to Ambient

(Notes 5 & 9) 70

R

JA

θ

(Notes 6 & 8) 60 Thermal Resistance, Junction to Lead (Notes 8 & 10) Operating and storage temperature range

Notes: 4. AEC-Q101 VGS maximum is ±16V.

5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

6. Same as note (5), except the device is measured at t ≤ 10 sec.

7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.

8. For a dual device with one active die.

9. For a device with two active die running at equal power.

10. Thermal resistance from junction to solder-point.

R

JL

T

, T

J

STG

ZXMP6A16DN8

Document number: DS33586 Rev. 4 - 2

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1.25

10.0

1.81

14.5

2.15 17

100

48.85

-55 to 150

W

mW/°C

°C/W

°C

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Thermal Characteristics

R

DS(on)

10

Limited

1

DC

100m

Drain Current (A)

10m

D

-I

One active die

100m 1 10 100

1s

Single Pulse

=25°C

T

amb

100ms

-VDS Drain-Sour ce Voltage (V)

Safe Operating Area

110 100

90 80 70 60 50 40 30 20 10

Thermal Resistance (°C/W)

T

=25°C

amb

One active die

D=0.5

D=0.2

0

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Transient Thermal Impedance

10ms

1ms

D=0.1

100µs

Single Pulse

D=0.05

ZXMP6A16DN8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

One active die

0.4

0.2

0.0 0 20 40 60 80 100 120 140 160

Max Power Dissipat i on (W)

Temperature (°C)

Two active die

Derating Curve

Single Pulse

=25°C

T

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

amb

One active die

Pulse Width (s)

Pulse Power Dissipation

ZXMP6A16DN8

Document number: DS33586 Rev. 4 - 2

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ZXMP6A16DN8

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-60

⎯ ⎯

V

-1.0 µA

±100

nA

ID = -250µA, VGS = 0V V

= -60V, VGS = 0V

DS

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS

Gate Threshold Voltage Static Drain-Source On-Resistance (Note 11) Forward Transconductance (Notes 11 & 12)

Diode Forward Voltage (Note 11) Reverse recovery time (Note 12) Reverse recovery charge (Note 12)

V

GS(th)

R

DS (ON)

g

V

Q

t

⎯

fs

⎯

SD rr

⎯

rr

-1.0

⎯

⎯ ⎯ ⎯ ⎯

7.2

85

125

⎯

-0.85 -0.95 V

29.2

39.6

⎯ ⎯

V

ID = -250µA, VDS = VGS

= -10V, ID = -2.9A

V

mΩ

GS

V

= -4.5V, ID = -2.4A

GS

S

VDS = -15V, ID = -2.9A IS = -3.4A, VGS = 0V, TJ = +25°C

ns

I

= -2A, di/dt = 100A/µs,

S

T

nC

= +25°C

J

DYNAMIC CHARACTERISTICS (Note 12)

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 13) Total Gate Charge (Note 13) Gate-Source Charge (Note 13) Gate-Drain Charge (Note 13) Turn-On Delay Time (Note 13) Turn-On Rise Time (Note 13) Turn-Off Delay Time (Note 13) Turn-Off Fall Time (Note 13)

Notes: 11. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%

12. For design aid only, not subject to production testing.

13. Switching characteristics are independent of operating junction temperatures.

ZXMP6A16DN8

Document number: DS33586 Rev. 4 - 2

⎯

C

iss

⎯

C

oss

C

rss

⎯

Q

g

⎯

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

⎯

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1021

83.1

56.4

12.1

24.2

2.5

3.7

3.5

4.1 35 10

⎯ ⎯ ⎯

⎯

⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯

pF pF pF nC nC nC nC ns ns ns ns

V

= -30V, VGS = 0V,

DS

f = 1MHz VGS = -5V

V

= -10V

GS

= -30V, VGS = -10V,

V

DD

I

= -1A, RG ≅ 6.0Ω

D

= -30V,

V

DS

= -2.9A

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Typical Characteristics

T = 25°C

10

1

Drain Current (A)

D

-I

0.1

0.1 1 10

-VDS Drain-Source Voltage (V)

Outpu t C h aracteristics

10

T = 150°C

1

Drain Current (A)

D

-I

0.1 234

-VGS Gate-Source Voltage (V)

Typical Transfer Characteristics

10V

5V

T = 25°C

-VDS = 10V

4.5V 4V

3.5V 3V

2.5V

ZXMP6A16DN8

T = 150°C

10V

10

1

0.1

Drain Current (A)

-V

GS

D

-I

0.01

0.1 1 10

-VDS Drain-Source Voltage (V)

5V

4V

3.5V 3V

2.5V

-V

2V

GS

Outpu t C h aracteristics

1.8

1.6

GS(th)

1.4

and V

1.2

DS(on)

1.0

0.8

0.6

Normalised R

0.4

-50 0 50 100 150

Tj Junction Temperature (°C)

VGS = -10V ID = - 2.9A

VGS = V

DS

ID = -250uA

R

DS(on)

V

GS(th)

Normalised Cu rve s v Tem p eratu re

10

2.5V

1

-V

GS

3V

T = 2 5°C

3.5V 4V

4.5V

10

T = 150°C

1

T = 25°C

0.1

5V

0.1

10V

Drain-Source On-Resistance (Ω)

0.1 1 10

DS(on)

R

-ID Drain Curren t (A)

On-Resistance v Drain Current

ZXMP6A16DN8

Document number: DS33586 Rev. 4 - 2

www.diodes.com

Reverse Drain Current (A)

SD

-I

0.01

0.4 0.6 0.8 1.0 1.2

Source-Drain Voltage (V)

-V

SD

Source-Drain Diode Forward Voltage

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Typical Characteristics (cont.)

1400 1200 1000

800 600 400 200

C Capacitance (pF)

0

0.1 1 10

C

ISS

-VDS - Drain - Source Voltage (V)

Capac ita nce v D r ain-Source Voltage

Test Circuits

ZXMP6A16DN8

VGS = 0V f = 1MHz

C

OSS

C

RSS

10

ID = -2.9A

8

6

4

2

Gate-Source Voltage (V)

0

0 5 10 15 20

GS

-V

Q - Charge (nC)

VDS = -30V

Gate-Source Voltage v Gate Charge

ZXMP6A16DN8

Document number: DS33586 Rev. 4 - 2

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Package Outline Dimensions

E1

E

A2

A3

e

b

D

A

Suggested Pad Layout

X

C2

Y

A1

h

C1

Detail ‘A’

°

45

L

0.254

Gaug e Plane Seating Plane

7°~9

°

Detail ‘A’

ZXMP6A16DN8

Dim Min Max

Dimensions Value (in mm)

X 0.60

Y 1.55 C1 5.4 C2 1.27

SO-8

A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10 E1 3.85 3.95

e 1.27 Typ h - 0.35 L 0.62 0.82

0° 8°

θ

All Dimensions in mm

ZXMP6A16DN8

Document number: DS33586 Rev. 4 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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ZXMP6A16DN8

Document number: DS33586 Rev. 4 - 2

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