Diodes ZXMP6A16DN8 User Manual

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Product Summary

I

D

TA = +25°C

(Notes 4 & 6)

-3.9A

-3.2A

V

R

(BR)DSS

-60V

Max Package

DS(ON)

85mΩ @ V

125mΩ @ VGS = -4.5V

= -10V

GS

SO-8

Description

This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.

Applications

• DC-DC Converters

• Power Management Functions

• Disconnect Switches

• Motor Control

SO-8

Top View

G1

S2

G2

Top View

ZXMP6A16DN8

DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Fast Switching Speed

• Low Threshold

• Low Gate Drive

• Low Profile SOIC Package

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method

• Weight: 0.074 grams (approximate)

D1S1

208

e3

1

2

D1

D2

1

G2

D2

S1

Equivalent Circuit

S2

Ordering Information

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMP6A16DN8TA ZXMP6A16D 7 12 500

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

ZXMP6A16DN8

Document number: DS33586 Rev. 4 - 2

ZXMP6A16D = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 11 = 2011)
WW = Week (01 - 53)

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ZXMP6A16DN8

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source voltage
Gate-Source voltage (Note 4)

(Notes 6 & 8)

Continuous Drain current

V

GS

= 10V

TA = +70°C (Notes 6 & 8)

V

DSS

V

GS

I

D

-60 V

±20

V

-3.9

-3.1

A

(Notes 5 & 8) -2.9
Pulsed Drain current (Notes 7 & 8)
Continuous Source current (Body diode) (Notes 6 & 8)
Pulsed Source current (Body diode) (Notes 7 & 8)

I

DM

I

S

I

SM

-18.3 A

-3.2 A

-18.3 A

Thermal Characteristics

Characteristic Symbol Value Unit

(Notes 5 & 8)
Power dissipation

Linear derating factor

(Notes 5 & 9)

P

D

(Notes 6 & 8)

(Notes 5 & 8)
Thermal Resistance, Junction to Ambient

(Notes 5 & 9) 70

R

JA

θ

(Notes 6 & 8) 60
Thermal Resistance, Junction to Lead (Notes 8 & 10)
Operating and storage temperature range

Notes: 4. AEC-Q101 VGS maximum is ±16V.

5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

6. Same as note (5), except the device is measured at t ≤ 10 sec.

7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.

8. For a dual device with one active die.

9. For a device with two active die running at equal power.

10. Thermal resistance from junction to solder-point.

R

JL

T

, T

J

STG

ZXMP6A16DN8

Document number: DS33586 Rev. 4 - 2

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1.25

10.0

1.81

14.5

2.15
17

100

48.85

-55 to 150

W

mW/°C

°C/W

°C

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Thermal Characteristics

R

DS(on)

10

Limited

1

DC

100m

Drain Current (A)

10m

D

-I

One active die

100m 1 10 100

1s

Single Pulse

=25°C

T

amb

100ms

-VDS Drain-Sour ce Voltage (V)

Safe Operating Area

110
100

90
80
70
60
50
40
30
20
10

Thermal Resistance (°C/W)

T

=25°C

amb

One active die

D=0.5

D=0.2

0

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Transient Thermal Impedance

10ms

1ms

D=0.1

100µs

Single Pulse

D=0.05

ZXMP6A16DN8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

One active die

0.4

0.2

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipat i on (W)

Temperature (°C)

Two active die

Derating Curve

Single Pulse

=25°C

T

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

amb

One active die

Pulse Width (s)

Pulse Power Dissipation

ZXMP6A16DN8

Document number: DS33586 Rev. 4 - 2

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