Diodes ZXMP6A13G User Manual

A

f

D

Product Summary

V

R

(BR)DSS

-60V

DS(on)

390mΩ @ V

595mΩ @ VGS = -4.5V

= -10V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

• Motor control

ADVANCE INFORMATION

• DC-DC Converters

• Power management functions

• Uninterrupted power supply

SOT223

Top View

= 25°C

T

A

-2.3A

-1.9A

I

D

Pin Out - Top View

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ZXMP6A13G

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Fast switching speed

• Low gate drive

• Low input capacitance

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT223

• Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.112 grams (approximate)

G

S

Equivalent Circuit

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMP6A13GTA ZXMP6A13 7 12 1,000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

ZXMP6A13G

Document Number DS32032 Rev. 5 - 2

ZXMP

6A13

ZXMP = Product Type Marking Code, Line 1 6A13 = Product Type Marking Code, Line 2

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ZXMP6A13G

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source voltage Gate-Source voltage

Continuous Drain current

V

GS

= 10V

(Note 5) TA = 70°C (Note 5)

V

DSS

V

GS

I

D

-60 V

±20

-2.3

-1.9

(Note 4) -1.7

Pulsed Drain current

V

GS

= 10V Continuous Source current (Body diode) (Note 5) Pulsed Source current (Body diode) (Note 6)

(Note 6)

IDM

I

S

I

SM

-7.8 A

-4.1 A

-7.8 A

Thermal Characteristics @T

ADVANCE INFORMATION

Power dissipation Linear derating factor

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead (Note 7)

Operating and storage temperature range

Notes: 4. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

5. Same as note (1), except the device is measured at t ≤ 10 sec.

6. Same as note (1), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).

Characteristic Symbol Value Unit

= 25°C unless otherwise specified

A

(Note 4)

P

D

(Note 5) (Note 4)

(Note 5) 32.0

R

JA

θ

R

JL

, T

T

J

STG

2.0 16

3.9 31

62.5

9.8

-55 to 150

V

A

W

mW/°C

°C/W

°C

ZXMP6A13G

Document Number DS32032 Rev. 5 - 2

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Thermal Characteristics

10

R Limited

1

100m

Drain Current (A)

ADVANCE INFORMATION

D

-I

Single Pulse

T

10m

-VDS Drain-Source Voltage (V)

DS(on)

DC

1s

100ms

10ms

1ms

=25°C

amb

1 10 100

100µs

Safe Operating Area

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2.0

1.6

1.2

0.8

0.4

0.0 0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

ZXMP6A13G

70

T

=25°C

amb

60

50

40

D=0.5

30

20

D=0.2

10

0

Thermal Resistance (°C/W)

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

100

10

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Pow er Dissipation

Single Pulse

T

=25°C

amb

ZXMP6A13G

Document Number DS32032 Rev. 5 - 2

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November 2011