A
f
D
Product Summary
V
R
(BR)DSS
-60V
DS(on)
390mΩ @ V
595mΩ @ VGS = -4.5V
= -10V
GS
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
• Motor control
ADVANCE INFORMATION
• DC-DC Converters
• Power management functions
• Uninterrupted power supply
SOT223
Top View
= 25°C
T
A
-2.3A
-1.9A
I
D
Pin Out - Top View
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ZXMP6A13G
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Fast switching speed
• Low gate drive
• Low input capacitance
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (approximate)
G
S
Equivalent Circuit
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMP6A13GTA ZXMP6A13 7 12 1,000
Notes: 1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
ZXMP6A13G
Document Number DS32032 Rev. 5 - 2
ZXMP
6A13
ZXMP = Product Type Marking Code, Line 1
6A13 = Product Type Marking Code, Line 2
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Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
V
GS
= 10V
(Note 5)
TA = 70°C (Note 5)
V
DSS
V
GS
I
D
-60 V
±20
-2.3
-1.9
(Note 4) -1.7
Pulsed Drain current
V
GS
= 10V
Continuous Source current (Body diode) (Note 5)
Pulsed Source current (Body diode) (Note 6)
(Note 6)
IDM
I
S
I
SM
-7.8 A
-4.1 A
-7.8 A
Thermal Characteristics @T
ADVANCE INFORMATION
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Note 7)
Operating and storage temperature range
Notes: 4. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. Same as note (1), except the device is measured at t ≤ 10 sec.
6. Same as note (1), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
Characteristic Symbol Value Unit
= 25°C unless otherwise specified
A
(Note 4)
P
D
(Note 5)
(Note 4)
(Note 5) 32.0
R
JA
θ
R
JL
, T
T
J
STG
2.0
16
3.9
31
62.5
9.8
-55 to 150
V
A
W
mW/°C
°C/W
°C
ZXMP6A13G
Document Number DS32032 Rev. 5 - 2
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Thermal Characteristics
10
R
Limited
1
100m
Drain Current (A)
ADVANCE INFORMATION
D
-I
Single Pulse
T
10m
-VDS Drain-Source Voltage (V)
DS(on)
DC
1s
100ms
10ms
1ms
=25°C
amb
1 10 100
100µs
Safe Operating Area
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2.0
1.6
1.2
0.8
0.4
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
ZXMP6A13G
70
T
=25°C
amb
60
50
40
D=0.5
30
20
D=0.2
10
0
Thermal Resistance (°C/W)
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
100
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Pow er Dissipation
Single Pulse
T
=25°C
amb
ZXMP6A13G
Document Number DS32032 Rev. 5 - 2
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g
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)
r
)
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ZXMP6A13G
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
I
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
V
GS(th
R
DS (ON)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
V
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
ADVANCE INFORMATION
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
C
C
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Q
Q
t
D(on
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
t
D(off
Turn-Off Fall Time (Note 10)
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
-60
DSS
⎯ ⎯
DSS
⎯ ⎯
GSS
-1.0
⎯ ⎯
g
fs
SD
t
r
Q
r
iss
oss
rss
Q
⎯
Q
⎯
s
d
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
⎯
⎯
t
⎯
f
⎯ ⎯
-0.5
±100
⎯
-3.0 V
0.390
0.595
1.8
-0.85 -0.95 V
21.1
19.3
219
25.7
20.5
2.9
5.9
0.74
1.5
1.6
2.2
11.2
5.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
ID = -250μA, VGS = 0V
μA
VDS = -60V, VGS = 0V
nA
V
= ±20V, VDS = 0V
GS
ID = -250μA, VDS = VGS
V
= -10V, ID = -0.9A
GS
Ω
S
= -4.5V, ID = -0.8A
V
GS
VDS = -15V, ID = -0.9A
IS = -0.8A, VGS = 0V, TJ = 25°C
ns
I
= -0.9A, di/dt = 100A/μs,
S
= 25°C
T
nC
pF
pF
pF
nC
J
= -30V, VGS = 0V
V
DS
f = 1MHz
VGS = -4.5V
nC
nC
V
GS
= -10V
nC
ns
ns
V
= -30V, VGS = -10V
DD
ns
= -1A, RG ≅ 6.0Ω
I
D
ns
= -30V
V
DS
I
= -0.9A
D
ZXMP6A13G
Document Number DS32032 Rev. 5 - 2
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Typical Characteristics
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ZXMP6A13G
T = 25°C
10
1
0.1
Drain Current (A)
D
-I
10V
4.5V
3.5V
3V
2.5V
2V
-V
GS
-I
Drain Current (A)
T = 150°C
10
1
0.1
D
0.01
ADVANCE INFORMATION
0.1 1 10
-VDS Drain-Source Voltage (V)
Outp u t C h aracte ristics
0.1 1 10
-VDS Drain-Source Voltage (V)
Outp u t C h aracte ristics
10V
5V
4.5V
3.5V
3V
2.5V
2V
1.5V
-V
GS
1.8
-VDS = 10V
1
T = 150°C
Drain Current (A)
D
0.1
-I
T = 25°C
12345
-VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
GS(th)
1.6
1.4
and V
1.2
DS(on)
1.0
0.8
Normalised R
0.6
-50 0 50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
VGS = -10V
ID = -0.9A
V
GS(th)
R
DS(on)
VGS = V
DS
ID = -250uA
1.5V
-V
GS
2V
2.5V
3V
3.5V
T = 25°C
4V
5V
10
T = 150°C
1
T = 25°C
1
7V
10V
Drain-Source On-Resistance (Ω)
0.1 1 10
DS(on)
R
-ID Drain Cu rrent (A)
On-Re sistan ce v Drain C urrent
ZXMP6A13G
Document Number DS32032 Rev. 5 - 2
www.diodes.com
0.1
Reverse Drain Current (A)
0.01
SD
-I
0.40.60.81.01.21.4
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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Typical Characteristics - continued
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ADVANCE INFORMATION
Test Circuits
300
VGS = 0V
f = 1MHz
C
ISS
200
C
100
C
C Capacitance (pF)
0
0.1 1 10
RSS
OSS
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Q
G
Q
V
GS
G
Q
GD
10
8
6
4
2
VDS = -30V
ID = -0.9A
Gate-Source Voltage (V)
0
0123456
GS
-V
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
urrent
regulator
12V
0.2F
50k
I
G
Sameas
D.U. T
D.U.T
V
GS
V
DS
I
D
Charge
Basicgatechargewaveform
V
DS
90%
10%
V
GS
t
trt
t
(on)
d(of )
t
d(on)
r
t
(on)
Switching time waveforms
ZXMP6A13G
Document Number DS32032 Rev. 5 - 2
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Gate charge test circuit
R
D
V
GS
R
G
Pulse width ⬍ 1S
Duty factor 0.1%
Switching time test circuit
V
DS
V
DD
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ZXMP6A13G
Package Outline Dimensions
Dim Min Max Typ
ADVANCE INFORMATION
A
A1
SOT223
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b1 2.90 3.10 3.00
b2 0.60 0.80 0.70
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e — — 4.60
e1 — — 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
Suggested Pad Layout
Y1
Y2
ZXMP6A13G
Document Number DS32032 Rev. 5 - 2
X2
X1
C2
C1
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Dimensions Value (in mm)
X1 3.3
X2 1.2
Y1 1.6
Y2 1.6
C1 6.4
C2 2.3
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© Diodes Incorporated
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
ADVANCE INFORMATION
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
Diodes Incorporated
ZXMP6A13G
ZXMP6A13G
Document Number DS32032 Rev. 5 - 2
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