Page 1
A
G
Product Summary
Max I
V
Max R
(BR)DSS
-60V
DS(on)
400mΩ @ V
600mΩ @ VGS = -4.5V
= -10V
GS
T
= +25°C
-1.1A
-0.9A
D
Description
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Applications
DC - DC converters
Power management functions
Relay and solenoid driving
Motor control
SOT23
D
Top View
ZXMP6A13FQ
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Fast switching speed
Low input capacitance
Low gate charge
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Available
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
S
D
G
S
Top View
Pin Out
Equivalent Circuit
Ordering Information (Notes 4 & 5)
Product Compliance Case Quantity per reel
ZXMP6A13FQTA
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Automotive SOT23 3,000 Units
Marking Information
7P6
ZXMP6A13FQ
Document Number DS36684 Rev. 2 - 2
7P6 = Product Type Marking Code
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Page 2
ZXMP6A13FQ
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
= 10V
GS
TA = +70°C (Note 7)
Pulsed Drain Current (Note 8)
Continuous Source Current (Body Diode) (Note 7)
Pulsed Source Current (Body Diode) (Note 8)
(Note 7)
(Note 6)
V
DSS
V
GS
ID
I
DM
I
S
I
SM
-60 V
±20 V
-1.1
-0.8
A
-0.9
-4.0 A
-1.2 A
-4.0 A
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
Linear Derating Factor
Power Dissipation (Note 7)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 9)
Operating and Storage Temperature Range
Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
7. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
8. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05 pulse width = 10μs - pulse current limited by maximum junction temperature.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
R
R
R
T
J, TSTG
P
D
P
D
θJA
θJA
θJL
625
5
806
6.5
200 °C/W
155 °C/W
194 °C/W
-55 to +150 °C
mW
mW/°C
mW
mW/°C
ZXMP6A13FQ
Document Number DS36684 Rev. 2 - 2
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Page 3
Thermal Characteristics
10
R
DS(on)
Limited
1
DC
100m
Single Pulse
Drain Current (A)
10m
D
-I
200
150
100
50
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Transient Thermal Impedance
1s
100ms
T
=25°C
amb
110100
-VDS Drain-Source Voltage (V)
Safe Operating Area
T
=25°C
amb
D=0.5
D=0.2
Pulse Width (s)
10ms
1ms
D=0.1
100µs
Single Pulse
D=0.05
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
Single Pulse
T
=25°C
amb
10
1
Maximum Power (W)
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXMP6A13FQ
ZXMP6A13FQ
Document Number DS36684 Rev. 2 - 2
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Page 4
)
r
r
)
r
)
g
g
g
ZXMP6A13FQ
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
I
DSS
DSS
GSS
-60
-0.5 μA
±100 nA
V
I
= -250μA, VGS = 0V
D
V
= -60V, VGS = 0V
DS
V
= 20V, VDS = 0V
GS
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 10)
Forward Transconductance (Notes 10 and 12)
Diode Forward Voltage (Note 10)
Reverse Recovery Time (Note 12)
Reverse Recovery Charge (Note 12)
V
GS(th
R
DS (ON)
g
fs
V
SD
t
r
Q
r
-1.0
1.8
-0.85 -0.95 V
21.1
19.3
-3.0 V
0.4
0.6
I
D
V
Ω
V
S
VDS = -15V, ID = -0.9A
TJ = +25°C, IS = -0.8A, VGS = 0V
ns
nC
T
di/dt = 100A/μs
= -250μA, VDS = VGS
= -10V, ID = -0.9A
GS
= -4.5V, ID = -0.8A
GS
= +25°C, IF = -0.9A,
J
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Notes: 10. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing
C
iss
C
oss
C
rss
t
D(on
t
t
D(off
t
f
Q
g
Q
Q
s
Q
d
219
25.7
20.5
1.6
2.2
11.2
5.7
2.9
5.9
0.74
1.5
pF
ns
nC
nC
V
= -30V, VGS = 0V
DS
f = 1.0MHz
= -30V, ID = -1A,
V
DD
R
6.0Ω V
G
V
= -30V, VGS = -4.5V,
DS
I
= -0.9A
D
V
= -30V, VGS = -10V,
DS
I
= -0.9A
D
GS
= -10V
ZXMP6A13FQ
Document Number DS36684 Rev. 2 - 2
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Page 5
Typical Characteristics
T = 25°C
10
1
0.1
Drain Current (A)
D
-I
0.1 1 10
-VDS Drain-Source Voltage (V)
Output Characteristics
-VDS = 10V
1
T = 150°C
Drain Current (A)
D
0.1
-I
12345
-VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
T = 25°C
10V
4.5V
3.5V
3V
2.5V
-V
2V
ZXMP6A13FQ
T = 150°C
10
1
0.1
Drain Current (A)
GS
D
-I
0.01
0.1 1 10
-VDS Drain-Source Voltage (V)
10V
5V
4.5V
3.5V
3V
2.5V
2V
1.5V
-V
GS
Output Characteristics
1.8
GS(th)
1.6
1.4
and V
1.2
DS(on)
1.0
0.8
Normalised R
0.6
-50 0 50 100 150
VGS = -10V
ID = -0.9A
V
GS( th)
R
DS(on)
VGS = V
DS
ID = -250uA
Tj Junction Temperature (°C)
Normalised Curves v Temperature
1.5V
-V
1
Drain-Source On-Resistance
0.1 1 10
DS(on)
R
-ID Drain Current (A)
On-Resistance v Drain Current
ZXMP6A13FQ
Document Number DS36684 Rev. 2 - 2
2.5V
2V
GS
3V
3.5V
T = 25°C
4V
5V
7V
10V
Reverse Drain Current (A)
-I
10
T = 150°C
1
0.1
0.01
SD
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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Typical Characteristics - continued
300
C
200
100
C Capacitance (pF)
0
0.1 1 10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
ISS
C
OSS
C
RSS
VGS = 0V
f = 1MHz
10
8
6
4
2
Gate-Source Voltage (V)
0
0123456
GS
-V
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
ZXMP6A13FQ
VDS = -30V
ID = -0.9A
Test Circuits
ZXMP6A13FQ
Document Number DS36684 Rev. 2 - 2
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Page 7
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
H
K
K
1
A
All 7
°
J
M
L
a
L
1
C
B
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Dimensions Value (in mm)
Z
X
E
C
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
a
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
SOT23
8°
All Dimensions in mm
ZXMP6A13FQ
ZXMP6A13FQ
Document Number DS36684 Rev. 2 - 2
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Page 8
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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ZXMP6A13FQ
ZXMP6A13FQ
Document Number DS36684 Rev. 2 - 2
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