Product Summary
Max I
V
Max R
(BR)DSS
-60V
DS(on)
400mΩ @ V
600mΩ @ VGS = -4.5V
= -10V
GS
T
= 25°C
-1.1A
-0.9A
D
Description
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Applications
• DC - DC converters
• Power management functions
• Relay and solenoid driving
• Motor control
SOT23
Top View
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Diodes Incorporated
ZXMP6A13F
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Fast switching speed
• Low input capacitance
• Low gate charge
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
S
G
Top View
Pin Out
G
Equivalent Circuit
S
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMP6A13FTA
ZXMP6A13FQTA
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
AEC-Q101 7P6 7 8 3000 Units
Automotive
7P6 7 8 3000 Units
Marking Information
ZXMP6A13F
Document Number DS32014 Rev. 6 - 2
7P6
7P6 = Product Type Marking Code
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ZXMP6A13F
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
= 10V
GS
TA = 70°C (Note 7)
Pulsed Drain Current (Note 8)
Continuous Source Current (Body Diode) (Note 7)
Pulsed Source Current (Body Diode) (Note 8)
(Note 7)
(Note 6)
V
DSS
V
GS
ID
I
DM
I
S
I
SM
-60 V
±20 V
-1.1
-0.8
A
-0.9
-4.0 A
-1.2 A
-4.0 A
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
Linear Derating Factor
Power Dissipation (Note 7)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 9)
Operating and Storage Temperature Range
Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
7. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
8. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05 pulse width = 10μs - pulse current limited by maximum junction temperature.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
R
R
R
T
J, TSTG
P
D
P
D
θJA
θJA
θJL
625
5
806
6.5
mW
mW/°C
mW
mW/°C
200 °C/W
155 °C/W
194 °C/W
-55 to +150 °C
ZXMP6A13F
Document Number DS32014 Rev. 6 - 2
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Thermal Characteristics
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Diodes Incorporated
ZXMP6A13F
10
R
DS(on)
Limited
1
DC
100m
Drain Current (A)
10m
D
-I
Single Pulse
1s
100ms
10ms
1ms
T
=25°C
amb
110100
100µs
-VDS Drain-Source Voltage (V)
Safe Operating Area
200
T
=25°C
amb
150
D=0.5
100
D=0.2
50
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/ W)
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
Single Pulse
T
=25°C
amb
10
1
Maximum Power (W)
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXMP6A13F
Document Number DS32014 Rev. 6 - 2
3 of 8
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September 2012
© Diodes Incorporated