Diodes ZXMP4A57E6 User Manual

A

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Product Summary

Diodes Incorporated

40V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

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ZXMP4A57E6

V

R

(BR)DSS

-40V

80m @ V

150m @ VGS= -4.5V

DS(ON)

max

= -10V

GS

T

Description

This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.

Applications

 Motor Control

ADVANCE INFORMATION

 DC-DC Converters
 Power Management Functions
 Uninterrupted Power Supply

SOT26

Top View

Ordering Information (Note 4 & 5)

I

max

D

= +25°C

A

-3.7 A

-2.8 A

D

D

G

 Fast switching speed
 Low gate drive
 Low input capacitance
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
 PPAP Capable (Note 4)

Mechanical Data

 Case: SOT26
 Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

 Weight 0.018 grams (approximate)

D

D

G

e3

D

S

S

Top View

Pin-Out

Equivalent Circuit

Part Number Compliance Case Quantity per reel

ZXMP4A57E6TA Standard SOT26 3,000

ZXMP4A57E6QTA Automotive SOT26 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

ZXMP4A57E6

Document Number DS35238 Rev. 1 - 2

4A57

www.diodes.com

4A57 = Product Type Marking Code

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July 2013

© Diodes Incorporated

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Maximum Ratings (@T

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Pulsed Drain current
Continuous Source Current (Body Diode) (Note 7)
Pulsed Source Current (Body Diode) (Note 8)

Thermal Characteristics (@T

ADVANCE INFORMATION

Power dissipation
Linear derating factor

Thermal Resistance, Junction to Ambient
Operating and storage temperature range

Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

7. Same as note (4), except the device is measured at t  5 sec.

8. Same as note (4), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

V

DSS

V

GS

(Note 7)

= 10V

= 10V

TA = +70°C (Note 7)
(Note 6) -2.9
(Note 8)

= +25°C, unless otherwise specified.)

A

(Note 6)

(Note 7)
(Note 6)

(Note 7) 73

V

GS

V

GS

Characteristic Symbol Value Unit

I

D

IDM

I

S

I

SM

P

D

R

θJA

T

, T

J

STG

Diodes Incorporated

ZXMP4A57E6

-40 V

20

-3.7

-2.9

-18 A

-2.6 A

-18 A

1.1

8.8

1.7

13.7
113

-55 to +150 °C

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V

A

W

mW/°C

°C/W

ZXMP4A57E6

Document Number DS35238 Rev. 1 - 2

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Thermal Characteristics

R

DS(ON)

10

Limited

1

100m

Drain Current (A)

10m

D

-I

Single Pulse, T

ADVANCE INFORMATION

-VDS Drain-Source Voltage (V)

P-channel Safe Operating Area

DC

1s

100ms

10ms

1ms

100us

=25°C

amb

110

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Diodes Incorporated

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

Derat in g Cu rve

ZXMP4A57E6

100

80

D=0.5

60
40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

Single Pulse
T

=25°C

amb

ZXMP4A57E6

Document Number DS35238 Rev. 1 - 2

3 of 8

www.diodes.com

July 2013

© Diodes Incorporated