Diodes ZXMP4A16G User Manual
40V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP4A16G
SUMMARY
V
(BR)DSS
= -40V: R
= 0.060 : ID= -6.4A
DS(on)
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
·
Fast switching speed
·
Low threshold
·
Low gate drive
·
·
SOT223 package
APPLICATIONS
·
DC-DC Converters
·
Disconnect switches
·
Audio output stages
·
Motor Control
PINOUT
3
2
2
T
O
S
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMP4A16GTA 7” 12mm 1000 units
ZXMP4A16GTC 13” 12mm 4000 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
·
ZXMP
4A16
ISSUE 4 - JULY 2003
Top View
1
SEMICONDUCTORS
ZXMP4A16G
ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current (V
= -10V; TA=25°C)
GS
(VGS= -10V; TA=70°C)
(VGS= -10V; TA=25°C)
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
(b)
(b)
(a)
(b)
Pulsed Source Current (Body Diode)(c) I
(a)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C
A
=25°C
A
(b)
Operating and Storage Temperature Range T
I
D
I
DM
I
S
SM
P
P
DSS
GS
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
Junction to Ambient
(a)
(b)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
R
θJA
R
θJA
-40 V
⫾20 V
-6.4
-5.1
-4.6
-21 A
-5.2 A
-21 A
2.0
16
mW/°C
3.9
31
mW/°C
-55 to +150 °C
62.5 °C/W
32.2 °C/W
A
W
W
SEMICONDUCTORS
ISSUE 4 - JULY 2003
2
CHARACTERISTICS
ZXMP4A16G
ISSUE 4 - JULY 2003
3
SEMICONDUCTORS
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