Diodes ZXMP3F30FH User Manual

NEW PRODUCT

Product Summary

I

V

R

(BR)DSS

-30V

80mΩ@ V

140mΩ@ VGS =-4.5V

DS(on) max

= -10V

GS

D

TA = +25°C

-4.0A

⎯

Description

This new generation Trench MOSFET has been designed to minimize

the on-state resistance (R

performance.

) and yet maintain superior switching

DS(ON)

Applications

• Power management functions

• Portable Equipment

• Battery Charging

SOT23

G

Top View Pin Configuration

ZXMP3F30FH

P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Fast Switching Speed

• 4.5V Gate Drive Capability

• Thermally Enhanced SOT23 package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

D

G

S

Equivalent Circuit

e3

D

S

Ordering Information (Note 4)

Part Number Compliance Case Packaging

ZXMP3F30FHTA Standard SOT23 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free,
"Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ZXMP3F30FH

Document number: DS33579 Rev. 2 - 2

DMB

KPA

YM

www.diodes.com

KPA = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current, VGS = -10V

Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Linear Derating Factor

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

V

DSS

V

GSS

T

= +25°C (Note 6)

A

TA = +70°C (Note 6)
TA = +25°C (Note 5)

I

D

TL = +25°C (Note 8)

I

DM

I

S

I

SM

T

= +25°C (Note 5)

A

P

TA = +25°C (Note 6)

D

TL = +25°C (Note 8)

(Note 5)
(Note 6) 89

R

T

J, TSTG

JA

θ

ZXMP3F30FH

-30 V

±20 V

-3.4

-2.7

-2.8

-4.0

-15.3 A

-2 A

-15.3 A

0.95 W

7.6 mW/°C

1.4 W

11.2 mW/°C

1.96 W

15.7 mW/°C
131

-55 to +150 °C

A

°C/W

ZXMP3F30FH

Document number: DS33579 Rev. 2 - 2

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February 2014

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)

g

g

)

r

)

r

r

ZXMP3F30FH

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

I

DSS

DSS

GSS

-30

⎯ ⎯
⎯ ⎯

⎯ ⎯

-1 nA

±100

V

V

= 0V, ID = -250μA

GS

VDS = -30V, VGS = 0V

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 9)

Forward Transconductance (Note 9 & 10)
Diode Forward Voltage (Note 9)

V

GS(th

R

DS (ON)

V

g

fs

SD

-1

⎯ ⎯

⎯
⎯

⎯

5

-0.8 -1.2 V

-3 V

80

140

⎯

V
V

mΩ

V

S

VDS = -15V, ID = -3A
V

= VGS, ID = -250μA

DS

= -10V, ID = -2.5A

GS

= -4.5V, ID = -1.9A

GS

= 0V, IS = -1.7A

GS

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

⎯

iss

C

⎯

oss

C

⎯

rss

370

72
38

⎯
⎯
⎯

pF
pF
pF

= -15V, VGS = 0V,

V

DS

f = 1.0MHz

GATE CHARACTERISTICS

NEW PRODUCT

Total Gate Charge Qg
Gate-Source Charge
Gate-Drain Charge

Q
Q

⎯

s

⎯

d

⎯

7

1.2

1.3

⎯
⎯

⎯

nC

= -15V, VGS = -10V,

V

DS

= -3A

I

D

SWITCHING CHARACTERISTICS (Note 10 & 11)

Turn-On Delay Time
Rise Time
Turn-On Delay Time
Rise Time

t

t

d(on

d(off

t

t

f

⎯

⎯

⎯

⎯

1.3

2.6
49
22

⎯

⎯

⎯

⎯

ns

= -15V, VGS = -10V,

V

DS

= -1A, RG = 6.0Ω

I

D

SOURCE-DRAIN DIODE CHARACTERISTICS (Note 11)

Reverse Recovery Time
Reverse Recovery Charge

Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

6. Mounted on FR4 PCB measured at t ≤10 sec.

7. Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300μs – pulse width limited by maximum junction temperature.

8. Thermal resistance from junction to solder-point (at the end of the drain lead).

9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.

10. Switching characteristics are independent of operating junction temperature.

11. For design aid only, not subject to production testing.

t

r

Q

r

⎯

⎯

14.6

9.5

⎯

⎯

ns

IS= -1.5A,di/dt=100A/μs

nC

ZXMP3F30FH

Document number: DS33579 Rev. 2 - 2

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February 2014

© Diodes Incorporated