Diodes ZXMP3A17E6 User Manual
ADVANCE INFORMATION
30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP3A17E6
SUMMARY
V
(BR)DSS
= -30V; R
DS(ON)
= 0.07 ID= -4.0A
DESCRIPTION
This newgeneration of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
• SOT23-6 package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
-
6
3
2
T
O
S
•
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMP3A17E6TA 7” 8mm 3000 units
ZXMP3A17E6TC 13” 8mm 10000 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
•
317
ISSUE 2 - JUNE 2003
PINOUT
Top View
1
SEMICONDUCTORS
ZXMP3A17E6
ADVANCE INFORMATION
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current V
=10V; TA=25°C (b)
GS
V
=10V; TA=70°C (b)
GS
V
=10V; TA=25°C (a)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode) (c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
=25°C (b)
A
Operating and Storage Temperature Range T
DSS
GS
I
D
DM
S
SM
P
D
P
D
j:Tstg
-30 V
20 V
-4.0
-3.2
-3.2
-14.4 A
-2.5 A
-14.4 A
1.1
8.8
mW/°C
1.7
13.6
mW/°C
-55 to +150 °C
A
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
θJA
θJA
113 °C/W
73 °C/W
SEMICONDUCTORS
ISSUE 2 - JUNE 2003
2
ADVANCE INFORMATION
ZXMP3A17E6
CHARACTERISTICS
R
DS(ON)
10
Limited
1
DC
1s
100m
D rainCu rren t(A)
D
-I
10m
Single Pulse, T
0.1 1 10
100ms
amb
10ms
1ms
100us
=25°C
-VDSDrain-Source Voltage (V)
P-channel Safe Operating Area
100
80
D=0.5
60
40
D=0.2
20
Therm al Resistance(°C/W)
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse W idth (s)
Transient Thermal Impedance
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125 150
MaxPow er Dissipation (W)
Tem perature (°C)
D eratingCurve
100
10
1
Maximu mPower (W)
100µ 1m 10m 100m 1 10 100 1k
Pulse W idth (s)
Single Pulse
T
=25°C
amb
Pulse Power Dissipation
ISSUE 2 - JUNE 2003
3
SEMICONDUCTORS
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