Diodes ZXMP3A17DN8 User Manual

ZXMP3A17DN8

DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET

SUMMARY
V

(BR)DSS

= -30V; R

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

Low profile SOIC package

•

APPLICATIONS

•

Motor Drive

= 0.070 ;ID= -4.4A

DS(ON)

SO8

•

LCD backlighting

ORDERING INFORMATION

DEVICE REEL TAPE

ZXMP3A17DN8TA 7

ZXMP3A17DN8TC 13’‘ 12mm 2500 units

WIDTH

’‘ 12mm 500 units

QUANTITY

PER REEL

DEVICE MARKING

ZXMP
3A17D

ISSUE 1 - OCTOBER 2005

PINOUT

Top view

1

ZXMP3A17DN8

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current@V

=10V; TA=25⬚C (b)(d)

GS

@V

=10V; TA=70⬚C (b)(d)

GS

@V

=10V; TA=25⬚C (a)(d)

GS

Pulsed Drain Current (c) I

Continuous Source Current (Body Diode)(b) I

Pulsed Source Current (Body Diode)(c) I

Power Dissipation at TA=25°C (a)(d)

I

P

DSS

GS

D

DM

S

SM

D

Linear Derating Factor

Power Dissipation at TA=25°C (a)(e)

P

D

Linear Derating Factor

Power Dissipation at TA=25°C (b)(d)

P

D

Linear Derating Factor

Operating and Storage Temperature Range T

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(d) R

Junction to Ambient (b)(e) R

Junction to Ambient (b)(d) R

Notes

(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.

(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.

(d) For a dual device with one active die.

(e) For dual device with 2 active die running at equal power.

θJA

θJA

θJA

-30 V

⫾20 V

-4.4

-3.6

-3.4

-16.2 A

-2.5 A

-16.2 A

1.25
10

mW/°C

1.8
14

mW/°C

2.1
17

mW/°C

-55 to +150 °C

100 °C/W

70 °C/W

60 °C/W

A
A
A

W

W

W

ISSUE 1 - OCTOBER 2005

2

CHARACTERISTICS

ZXMP3A17DN8

R

DS(on)

10

Limit ed

1

100m

Drain Current (A)

D

10m

-I

100m 1 10

DC

1s

Singl e Pulse

T

=25°C

amb

Oneactivedie

100ms

10ms

1ms

100µs

-VDSDrai n-Source Voltage (V)

Safe Operating Area

110
100

Thermal Resistance (°C/W)

T

=25°C

amb

Oneactivedie

90
80
70

D=0. 5

60
50
40

D=0. 2

30
20
10

0

100µ 1m 10m 100m 1 10 100 1k

Singl e Pulse

D=0.05

D=0. 1

Pulse Width (s)

Transient Thermal Impedance

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

Oneactivedie

0.4

0.2

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissi pation (W)

Temperature (°C)

Two active die

Derating Curve

Singl e Pulse

=25°C

T

100

10

1

Max i mu m Po we r ( W)

100µ 1m 10m 100m 1 10 100 1k

amb

Oneactivedie

Pulse Width (s)

Pulse Power Dissipation

ISSUE 1 - OCTOBER 2005

3