Diodes ZXMP3A16N8 User Manual
30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP3A16N8
SUMMARY
V
(BR)DSS
= -30V; R
DS(ON)
= 0.040 ID= -6.7A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combinesthe benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
•
Low profile SOIC package
APPLICATIONS
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
SO8
DEVICE REEL
SIZE
ZXMP3A 16N 8TA 7” 12mm 500 units
ZXMP3A 16N 8TC 13” 12mm 2500 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
•
ZXMP
3A16
ISSUE 2 - MAY 2007
PINOUT
Top View
1
ZXMP3A16N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current V
=-10V; TA=25°C (b)
GS
V
=-10V; TA=70°C (b)
GS
V
=-10V; TA=25°C (a)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode) (c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
=25°C (b)
A
Operating and Storage Temperature Range T
I
P
P
D
DM
S
SM
DSS
GS
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
-30 V
20 V
-6.7
-5.4
-5.6
-26 A
-3.2 A
-26 A
1.9
15.2
mW/°C
2.8
22.4
mW/°C
-55 to +150 °C
65 °C/W
45 °C/W
A
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 2 - MAY 2007
2
110
10m
100m
1
10
SinglePulse
T
amb
=25°C
R
DS(on )
Limit ed
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-I
D
Drain Current (A)
-VDSDrai n-Source Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
T
amb
=25°C
Transient Thermal Impedance
D=0. 5
D=0. 2
D=0. 1
Singl e Pulse
D=0. 05
Thermal Resistance (°C/W)
Pulse Wi dth (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Singl e Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Wi dth (s)
Max i mu m Pow er (W)
CHARACTERISTICS
ZXMP3A16N8
ISSUE 2 - MAY 2007
3
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