Diodes ZXMP3A16G User Manual
A
f
D
Product Summary
V
(BR)DSS
-30V
R
45mΩ @ V
70mΩ @ VGS = -4.5V
DS(on)
max
= -10V
GS
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
ADVANCE INFORMATION
• Motor control
• DC-DC Converters
• Power management functions
• Relay and solenoid driving
SOT223
Top View
max
I
D
T
= 25°C
A
(Notes 3)
-7.5A
-5.9A
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• “Green” component. Lead Free Finish / RoHS compliant
(Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (approximate)
Pin Out - Top View
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G
S
Equivalent Circuit
ZXMP3A16G
Ordering Information (Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMP3A16GTA ZXMP3A16 7 12 1,000
ZXMP3A16GTC ZXMP3A16 13 12 4,000
Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds. All applicable RoHS
exemptions applied. Further information about Diodes Inc.’s “Green” Policy can be found on our website.
Marking Information
ZXMP3A16G
Document Number DS33575 Rev. 5 - 2
ZXMP
3A16
ZXMP = Product Type Marking Code, Line 1
3A16 = Product Type Marking Code, Line 2
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V
V
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ZXMP3A16G
Maximum Ratings @T
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
= 25°C unless otherwise specified
A
Characteristic Symbol
V
DSS
V
GS
(Note 3)
V
GS
= 10V
TA = 70°C (Note 3)
I
D
alue Unit
-30 V
±20
-7.5
-6.0
(Note 2) -5.4
Pulsed Drain current
V
= 10V
GS
(Note 4)
Continuous Source current (Body diode) (Note 3)
Pulsed Source current (Body diode) (Note 4)
IDM
I
S
I
SM
-24.9 A
-3.2 A
-24.9 A
Thermal Characteristics @T
ADVANCE INFORMATION
Characteristic Symbol
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Note 5)
Operating and storage temperature range
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
= 25°C unless otherwise specified
A
(Note 2)
P
D
(Note 3)
(Note 2)
(Note 3) 32.2
R
JA
θ
R
JL
θ
, T
T
J
STG
alue Unit
2.0
16
3.9
31
62.5
8.51
-55 to 150
V
A
W
mW/°C
°C/W
°C
ZXMP3A16G
Document Number DS33575 Rev. 5 - 2
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Thermal Characteristics
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ZXMP3A16G
R
DS(on)
Limited
10
1
DC
1s
100m
Sing le Pulse
Drain Current (A)
D
T
10m
ADVANCE INFORMATION
-I
amb
100ms
10ms
1ms
=25°C
110
100µs
-VDS Drain-Source Voltage (V)
Safe Operating Area
70
T
=25°C
amb
60
50
40
D=0.5
30
20
D=0.2
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Sing le Pulse
D=0.05
D=0.1
2.0
1.6
1.2
0.8
0.4
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
Single Pulse
T
=25°C
100
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
amb
Transient Thermal Impedance
Pulse Power Dissipa t ion
ZXMP3A16G
Document Number DS33575 Rev. 5 - 2
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