Diodes ZXMP3A16DN8 User Manual

ZXMP3A16DN8

DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET

SUMMARY
V

(BR)DSS

= -30V; R

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combinesthe benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

Low profile SOIC package

•

APPLICATIONS

•

Motor Drive

= 0.045 ;ID= -5.5A

DS(ON)

SO8

•

LCD backlighting

ORDERING INFORMATION

DEVICE REEL TAPE

ZXMP3A16DN8TA 7

ZXMP3A 16DN8TC 13’‘ 12mm 2500 units

WIDTH

’‘ 12mm 500 units

QUANTITY

PER REEL

DEVICE MARKING

ZXMP
3A16

ISSUE 2 - MAY 2007

PINOUT

Top view

1

ZXMP3A16DN8

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current@V

=10V; TA=25⬚C

GS

@VGS=10V; TA=70⬚C
@VGS=10V; TA=25⬚C

Pulsed Drain Current

(c)

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

Power Dissipation at T

=25°C

A

(c)

(a)(d)

(b)(d)
(b)(d)
(a)(d)

(b)

I

I

I

I

P

DSS

GS

D

DM

S

SM

D

Linear Derating Factor

(a)(e)

Power Dissipation at T

=25°C

A

P

D

Linear Derating Factor

(b)(d)

Power Dissipation at T

=25°C

A

P

D

Linear Derating Factor

Operating and Storage Temperature Range T

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient

Junction to Ambient

Junction to Ambient

Notes

(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.

(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.

(d) For a dual device with one active die.

(e) For dual device with 2 active die running at equal power.

(a)(d)

(b)(e)

(b)(d)

R

θJA

R

θJA

R

θJA

-30 V

⫾20 V

-5.5

-4.4

-4.2

-20 A

-3.2 A

-20 A

1.25
10

mW/°C

1.8
14

mW/°C

2.1
17

mW/°C

-55 to +150 °C

100 °C/W

70 °C/W

60 °C/W

W

W

W

A
A
A

ISSUE 2 - MAY 2007

2

100m 1 10

10m

100m

1

10

Singl e Pulse

T

amb

=25°C

Oneactive die

R

DS(on)

Limit ed

100µs

1ms

10ms

100ms

1s

DC

Safe Operating Area

-I

D

Drain Current (A)

-VDSDrai n-Source Voltage (V)

0 20 40 60 80 100 120 140 160

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Two active die

Oneactive die

Derating Curve

Temperature (°C)

Max Power Dissipation ( W)

100µ 1m 10m 100m 1 10 100 1k

0

10

20

30

40

50

60

70

80

90

100

110

T

amb

=25°C

Oneactivedie

Transient Thermal Impedance

D=0. 5

D=0. 2

D=0. 1

Singl e Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

100µ 1m 10m 100m 1 10 100 1k

1

10

100

Singl e Pulse

T

amb

=25°C

Oneactivedie

Pulse Power Dissipation

Pulse Width (s)

Maximum Power (W)

CHARACTERISTICS

ZXMP3A16DN8

ISSUE 2 - MAY 2007

3