Diodes ZXMP2120G4 User Manual

200V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY
V

(BR)DSS

DESCRIPTION

This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of telecom and general high voltage circuits.

A SOT23-5 version is also available (ZXMP2120E5).

FEATURES

•

•

•

•

•

=-200V; R

High voltage

Low on-resistance

Fast switching speed

Low gate drive

Low threshold

DS(ON)

= 25 ; ID= 200mA

ZXMP2120G4

3

2

2

T

O

S

•

SOT223 package variant engineered to increase spacing between
high voltage pins.

APPLICATIONS

•

Active clamping of primary side MOSFETs in 48 volt DC-DC converters

ORDERING INFORMATION

DEVICE REEL SIZE

(inches)

ZXMP2120G4TA 7 12mm embossed 1,000 units

ZXMP2120G4TC 13 12mm embossed 4,000 units

TAPE WIDTH (mm) QUANTITY

PER REEL

DEVICE MARKING

ZXMP
2120

ISSUE 2 - SEPTEMBER 2006

1

D

Pinout - top view

S

N/C

G

ZXMP2120G4

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Gate Source Voltage V

Continuous Drain Current (V

Pulsed Drain Current

(b)

=10V; T

GS

Pulsed Source Current (Body Diode)

(a)

Power Dissipation at T

amb

=25°C

amb

(b)

=25°C)

(a)

I

I

I

P

DS

GS

D

DM

SM

tot

Linear derating factor

Operating and Storage Temperature Range T

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

(a)

R

θJA

-200 V

⫾20

-200 mA

-1 A

-1 A

2.0

1.6

mW/°C

-55 to +150 °C

62.5 °C/W

V

W

ISSUE 2 - SEPTEMBER 2006

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