Diodes ZXMP2120FF User Manual

ZXMP2120FF

D

Top view

S

G

200V SOT23F P-channel enhancement mode MOSFET

Summary

V

(BR)DSS

-200 28 @ V

R

(⍀)I

DS

(on)

= -10V -137

GS

(mA)

D

Description

This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and freedom from thermal runaway and thermally induced secondary breakdown.

Applications benefiting from this device include a variety of telecom and general high voltage circuits.

Features

• High voltage

• Low on-resistance

• Fast switching speed

• Low gate drive

• Low threshold

• SOT23 FLAT package

D

G

S

Applications

• Active clamping of primary side MOSFETs in 48 volt DC-DC converters

Ordering information

Device Reel size

(inches)

ZXMP2120FFTA 7 8 3,000

Tape width

(mm)

Quantity

per reel

Device marking

1C4

Issue 1 - January 2007 1 www.zetex.com

ZXMP2120FF

Absolute maximum ratings

Parameter Symbol Limit Unit

Drain-source voltage V

Gate-source voltage V

Continuous drain current @ V

Pulsed drain current

(c)

= 10V; T

GS

Pulsed source current (body diode)

Power dissipation at T

amb

=25°C

(a)

amb

(c)

=25°C

(a)

DSS

I

DM

I

SM

P

GS

D

Linear derating factor 8 mW/°C

Power dissapation at T

amb

=25°C

(b)

P

D

Linear derating factor 12.3 mW/°C

Operating and storage temperature range T

j

, T

stg

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

(a)

(b)

R

⍜JA

-200 V

± 20 V

-137 mA

-0.8 A

1W

1.5 W

-55 to +150 °C

125 °C/W

81 °C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air

conditions. (b) For a device surface mounted on FR4 pcb measured at t ⱕ5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction

temperature.

Issue 1 - January 2007 2 www.zetex.com

Thermal characteristics

ZXMP2120FF

Issue 1 - January 2007 3 www.zetex.com