Diodes ZXMP2120E5 User Manual

200V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

(BR)DSS

=-200V; R

V

DESCRIPTION

This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.

= 28 ; ID= -122mA

DS(ON)

ZXMP2120E5

A 4 pin SOT223 version is also available (ZXMP2120G4).

FEATURES

High voltage

•

Low on-resistance

•

Fast switching speed

•

Low gate drive

•

•

Low threshold

•

SOT23-5 package variant engineered to increase spacing between
high voltage pins.

APPLICATIONS

•

Active clamping of primary side MOSFETs in 48 volt DC-DC converters

ORDERING INFORMATION

DEVICE REEL SIZE

ZXMP2120E5TA 7 8mm embossed 3,000 units

DEVICE MARKING

•

P120

(inches)

TAPE WIDTH (mm) QUANTITY

PER REEL

SOT23-5

N/C

D

N/C

PINOUT - TOP VIEW

S

G

ISSUE 2 - SEPTEMBER 2006

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ZXMP2120E5

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

V

(a)

I

I

I

P

DSS

GS

D

DM

SM

D

Drain-Source Voltage

Gate Source Voltage V

Continuous Drain Current (V

=10V; T

GS

amb

=25°C)

Pulsed Drain Current (c)

Pulsed Source Current (Body Diode)

Power Dissipation at T

amb

=25°C

(c)

(a)

Linear Derating Factor

Operating and Storage Temperature Range T

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

(a)

R

θJA

-200 V

±20

-122 mA

-0.7 A

-0.7 A

0.75

6

W

mW/°C

-55 to +150 °C

167 °C/W

V

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