Diodes ZXMP10A18G User Manual

A

f

D

Product Summary

V

R

(BR)DSS

-100V

150mΩ @ V

190mΩ @ VGS = -6V

DS(on)

max

= -10V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

ADVANCE INFORMATION

• Motor control

• DC-DC Converters

• Power management functions

• Relay and solenoid driving

SOT223

Top View

max

I

D

= 25°C

T

A

(Notes 3)

-3.7A

-3.3A

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ZXMP10A18G

100V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low on-resistance

• Fast switching speed

• “Green” component. Lead Free Finish / RoHS compliant

(Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT223

• Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,

Method 208

• Weight: 0.112 grams (approximate)

G

S

Pin Out - Top View

Equivalent Circuit

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMP10A18GTA ZXMP10A18 7 12 1,000

Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds. All applicable RoHS exemptions applied. Further information about Diodes Inc.’s “Green” Policy can be found on our website.

Marking Information

ZXMP10A18G

Document Number DS33598 Rev. 2 - 2

ZXMP

10A18

ZXMP = Product Type Marking Code, Line 1 10A18 = Product Type Marking Code, Line 2

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ZXMP10A18G

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source voltage Gate-Source voltage

Continuous Drain current

V

GS

= 10V

(Note 3) TA = 70°C (Note 3)

V

DSS

V

GS

I

D

-100 V ±20

-3.7

-3.0

(Note 2) -2.6

Pulsed Drain current

V

= 10V

GS

Continuous Source current (Body diode) (Note 3) Pulsed Source current (Body diode) (Note 4)

(Note 4)

IDM

I

S

I

SM

-16.5 A

-5.3 A

-16.5 A

Thermal Characteristics @T

ADVANCE INFORMATION

Power dissipation Linear derating factor

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead (Note 5)

Operating and storage temperature range

Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

3. Same as note (2), except the device is measured at t ≤ 10 sec.

4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

5. Thermal resistance from junction to solder-point (at the end of the drain lead).

Characteristic Symbol Value Unit

= 25°C unless otherwise specified

A

(Note 2)

P

D

(Note 3) (Note 2)

(Note 3) 32.2

R

JA

θ

R

JL

, T

T

J

STG

2.0 16

3.9 31

62.5

7.65

-55 to 150

V

A

W

mW/°C

°C/W

°C

ZXMP10A18G

Document Number DS33598 Rev. 2 - 2

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Thermal Characteristics

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ZXMP10A18G

R

DS(on)

10

Limited

1

DC

1s

100ms

100m

10m

Single Pulse T

=25°C

amb

1 10 100

Drain Current (A)

D

ADVANCE INFORMATION

-I

10ms

1ms

100µs

-VDS Drain-Source Voltage (V)

Safe Operating Area

70

T

=25°C

amb

60

50

40

D=0.5

30

20

D=0.2

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

Transient Thermal Impedance

2.0

1.6

1.2

0.8

0.4

0.0 0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

Single Pulse T

=25°C

100

10

amb

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

ZXMP10A18G

Document Number DS33598 Rev. 2 - 2

3 of 8

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December 2011