Page 1
A
YM
Product Summary
V
R
(BR)DSS
-100V
DS(on)
350mΩ @ V
450mΩ @ VGS= -6.0V
= -10V
GS
T
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Applications
Motor Control
DC-DC Converters
Power Management Functions
ADVANCE INFORMATION
Uninterrupted Power Supply
SOT26
Top View
I
D
= +25°C
-1.6A
-1.4A
ZXMP10A17E6Q
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Fast Switching Speed
Low gate drive
Low input capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Available
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.018 grams (approximate)
Equivalent Circuit
e3
Ordering Information (Note 4 & 5)
Part Number Qualification Case Packaging
ZXMP10A17E6QTA Automotive SOT26 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2013 2014 2015 2016 2017 2018 2019
Code A B C D E F G
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ZXMP10A17E6Q
Document Number DS36689 Rev. 2 - 2
1 of 7
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1A17 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: A = 2013
M = Month ex: 9 = September
December 2013
© Diodes Incorporated
Page 2
V
V
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
V
V
GS
GS
= 10V
= 10V
Continuous Source Current (Body diode) (Note 7)
Pulsed Source Current (Body diode) (Note 8)
Thermal Characteristics (@T
Characteristic Symbol
Power dissipation
Linear derating factor
ADVANCE INFORMATION
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
V
DSS
V
GS
(Note 7)
TA = +70°C (Note 7)
I
D
(Note 6) -1.3
(Note 8)
= +25°C, unless otherwise specified.)
A
IDM
I
S
I
SM
(Note 6)
P
D
(Note 7)
(Note 6)
(Note 7) 73
R
θJA
T
, T
J
STG
ZXMP10A17E6Q
alue Unit
-100 V
20
-1.6
-1.3
-7.7 A
-2.1 A
-7.7 A
alue Unit
1.1
8.8
1.7
13.7
113
-55 to +150 °C
V
A
W
mW/°C
°C/W
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
-100
V
-0.5 µA
100
nA
ID = -250µA, V
V
= -100V, V
DS
= 20V, V
V
GS
GS
DS
GS
= 0V
= 0V
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse recovery time (Note 10)
Reverse recovery charge (Note 10)
V
R
DS(ON)
V
GS(th)
g
fs
SD
t
rr
Q
rr
-2.0
2.8
-0.85 -0.95 V
33
48
-4.0 V
0.350
0.450
Ω
S
ns
nC
ID = -250µA, V
= -10V, ID = -1.4A
V
GS
V
= -6V, ID = -1.2A
GS
V
= -15V, ID = -1.4A
DS
IS = -1.7A, V
= -1.5A, di/dt = 100A/µs
I
S
GS
DS
= 0V
= VGS
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as note (6), except the device is measured at t 5 sec.
8. Same as note (6), except the device is pulsed with D = 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.
9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
424
36.6
29.8
7.1
10.7
1.7
3.8
3
3.5
13.4
7.2
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
= -50V, V
V
DS
F = 1MHz
V
= -6V
GS
= -10V
V
GS
= -50V, V
V
DD
= -1A, RG 6.0Ω
I
D
GS
GS
= 0V
V
= -50V
DS
= -1.4A
I
D
= -10V
ZXMP10A17E6Q
Document Number DS36689 Rev. 2 - 2
2 of 7
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December 2013
© Diodes Incorporated
Page 3
ZXMP10A17E6Q
ADVANCE INFORMATION
ZXMP10A17E6Q
Document Number DS36689 Rev. 2 - 2
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December 2013
© Diodes Incorporated
Page 4
ZXMP10A17E6Q
ADVANCE INFORMATION
ZXMP10A17E6Q
Document Number DS36689 Rev. 2 - 2
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December 2013
© Diodes Incorporated
Page 5
Test Circuits
ADVANCE INFORMATION
ZXMP10A17E6Q
ZXMP10A17E6Q
Document Number DS36689 Rev. 2 - 2
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December 2013
© Diodes Incorporated
Page 6
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
ADVANCE INFORMATION
K
J
A
B C
H
M
D
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
G
Z
Y
ZXMP10A17E6Q
Document Number DS36689 Rev. 2 - 2
X
C1
6 of 7
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Dim Min Max Typ
Dimensions Value (in mm)
SOT26
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
0° 8°
All Dimensions in mm
Z 3.20
G 1.60
X 0.55
Y 0.80
C1 2.40
C2 0.95
0.95
ZXMP10A17E6Q
December 2013
© Diodes Incorporated
Page 7
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
ADVANCE INFORMATION
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
MPORTANT NOTICE
LIFE SUPPORT
ZXMP10A17E6Q
ZXMP10A17E6Q
Document Number DS36689 Rev. 2 - 2
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