Diodes ZXMP10A17E6Q User Manual

A

YM

Product Summary

V

R

(BR)DSS

-100V

DS(on)

350mΩ @ V

450mΩ @ VGS= -6.0V

= -10V

GS

T

Description

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Applications

 Motor Control

 DC-DC Converters

 Power Management Functions

ADVANCE INFORMATION

 Uninterrupted Power Supply

SOT26

Top View

I

D

= +25°C

-1.6A

-1.4A

ZXMP10A17E6Q

100V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Fast Switching Speed

 Low gate drive

 Low input capacitance

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Available

Mechanical Data

 Case: SOT26

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals Connections: See diagram below

 Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

 Weight: 0.018 grams (approximate)

Equivalent Circuit

e3

Ordering Information (Note 4 & 5)

Part Number Qualification Case Packaging

ZXMP10A17E6QTA Automotive SOT26 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2013 2014 2015 2016 2017 2018 2019

Code A B C D E F G

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ZXMP10A17E6Q

Document Number DS36689 Rev. 2 - 2

1 of 7

www.diodes.com

1A17 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: A = 2013
M = Month ex: 9 = September

December 2013

© Diodes Incorporated

V

V

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

V

V

GS

GS

= 10V

= 10V

Continuous Source Current (Body diode) (Note 7)

Pulsed Source Current (Body diode) (Note 8)

Thermal Characteristics (@T

Characteristic Symbol

Power dissipation
Linear derating factor

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

V

DSS

V

GS

(Note 7)

TA = +70°C (Note 7)

I

D

(Note 6) -1.3
(Note 8)

= +25°C, unless otherwise specified.)

A

IDM

I

S

I

SM

(Note 6)

P

D

(Note 7)

(Note 6)
(Note 7) 73

R

θJA

T

, T

J

STG

ZXMP10A17E6Q

alue Unit

-100 V

20

-1.6

-1.3

-7.7 A

-2.1 A

-7.7 A

alue Unit

1.1

8.8

1.7

13.7
113

-55 to +150 °C

V

A

W

mW/°C

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-100

 

 

 

V

-0.5 µA

100

nA

ID = -250µA, V

V

= -100V, V

DS

= 20V, V

V

GS

GS

DS

GS

= 0V

= 0V

= 0V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 9)

Forward Transconductance (Notes 9 & 10)

Diode Forward Voltage (Note 9)

Reverse recovery time (Note 10)

Reverse recovery charge (Note 10)

V

R

DS(ON)

V

GS(th)

g

fs

SD

t

rr

Q

rr

-2.0









 

2.8



-0.85 -0.95 V

33

48

-4.0 V

0.350

0.450







Ω

S

ns

nC

ID = -250µA, V

= -10V, ID = -1.4A

V

GS

V

= -6V, ID = -1.2A

GS

V

= -15V, ID = -1.4A

DS

IS = -1.7A, V

= -1.5A, di/dt = 100A/µs

I

S

GS

DS

= 0V

= VGS

DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge (Note 11)

Total Gate Charge (Note 11)

Gate-Source Charge (Note 11)

Gate-Drain Charge (Note 11)

Turn-On Delay Time (Note 11)

Turn-On Rise Time (Note 11)

Turn-Off Delay Time (Note 11)

Turn-Off Fall Time (Note 11)

Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.

7. Same as note (6), except the device is measured at t  5 sec.

8. Same as note (6), except the device is pulsed with D = 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.

9. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%.

10. For design aid only, not subject to production testing.

11. Switching characteristics are independent of operating junction temperatures.

C



iss

C

oss

C



rss

Q



g

Q

g

Q



gs

Q



gd

t

D(on)

t



r

t



D(off)

t

f









424

36.6

29.8

7.1

10.7

1.7

3.8

3

3.5

13.4

7.2























pF

pF

pF

nC

nC

nC

nC

ns

ns

ns

ns

= -50V, V

V

DS

F = 1MHz

V

= -6V

GS

= -10V

V

GS

= -50V, V

V

DD

= -1A, RG  6.0Ω

I

D

GS

GS

= 0V

V

= -50V

DS

= -1.4A

I

D

= -10V

ZXMP10A17E6Q

Document Number DS36689 Rev. 2 - 2

2 of 7

www.diodes.com

December 2013

© Diodes Incorporated

ZXMP10A17E6Q

ADVANCE INFORMATION

ZXMP10A17E6Q

Document Number DS36689 Rev. 2 - 2

3 of 7

www.diodes.com

December 2013

© Diodes Incorporated