Diodes ZXMP10A17E6 User Manual

A

Product Summary

V

R

(BR)DSS

-100V

DS(on)

350mΩ @ V

450mΩ @ VGS= -6V

= -10V

GS

T

Description

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Applications

• Motor Control

• DC-DC Converters

• Power Management Functions

ADVANCE INFORMATION

• Uninterrupted Power Supply

SOT26

Top View

I

D

= +25°C

-1.6A

-1.4A

D

D



Green

ZXMP10A17E6

100V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Fast Switching Speed

• Low gate drive

• Low input capacitance

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See diagram below

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.018 grams (approximate)

D

D

SG

Pin Out

Top View

Equivalent Circuit

e3

Ordering Information (Note 4)

Part Number Compliance Case Packaging

ZXMP10A17E6TA Standard SOT26 3,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

ZXMP10A17E6

Document Number DS32027 Rev. 6 - 2

www.diodes.com

1A17 = Product Type Marking Code

1 of 7

January 2014

© Diodes Incorporated

V

V

ZXMP10A17E6

Maximum Ratings (@T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

V

DSS

V

GS

(Note 6)

V

GS

= 10V

TA = +70°C (Note 6)

I

D

alue Unit

-100 V

±20

V

-1.6

-1.3

A

(Note 5) -1.3

Pulsed Drain Current

V

GS

= 10V

Continuous Source Current (Body diode) (Note 6)

Pulsed Source Current (Body diode) (Note 7)

(Note 7)

IDM

I

S

I

SM

-7.7 A

-2.1 A

-7.7 A

Thermal Characteristics (@T

Characteristic Symbol

Power dissipation
Linear derating factor

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

(Note 5)

P

D

(Note 6)

(Note 5)
(Note 6) 73

= +25°C, unless otherwise specified.)

A

R

θJA

T

, T

J

STG

alue Unit

1.1

8.8

1.7

13.7
113

-55 to +150

W

mW/°C

°C/W

°C

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-100

⎯ ⎯

⎯ ⎯

⎯ ⎯

V

-0.5 µA

±100

nA

ID = -250µA, V

V

= -100V, V

DS

V

= ±20V, V

GS

GS

DS

GS

= 0V

= 0V

= 0V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 8)

Forward Transconductance (Notes 8 & 9)

Diode Forward Voltage (Note 8)

Reverse recovery time (Note 9)

Reverse recovery charge (Note 9)

V

GS(th)

R

⎯ ⎯

DS(ON)

g

⎯

fs

V

⎯

SD

t

rr

Q

⎯

rr

-2

⎯

2.8

-0.85 -0.95 V

33

48

-4 V

0.35

0.45

⎯

⎯

⎯

Ω

S

ns

nC

ID = -250µA, V

V

= -10V, ID = -1.4A

GS

= -6V, ID = -1.2A

V

GS

V

= -15V, ID = -1.4A

DS

IS = -1.7A, V

= -1.5A, di/dt = 100A/µs

I

S

GS

DS

= 0V

= VGS

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge (Note 10)

Total Gate Charge (Note 10)

Gate-Source Charge (Note 10)

Gate-Drain Charge (Note 10)

Turn-On Delay Time (Note 10)

Turn-On Rise Time (Note 10)

Turn-Off Delay Time (Note 10)

Turn-Off Fall Time (Note 10)

Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.

6. Same as note (5), except the device is measured at t ≤ 5 sec.

7. Same as note (5), except the device is pulsed with D = 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.

8. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.

9. For design aid only, not subject to production testing.

10. Switching characteristics are independent of operating junction temperatures.

C

iss

C

oss

C

rss

Q

g

Q

⎯

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

⎯

f

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

424

36.6

29.8

7.1

10.7

1.7

3.8

3

3.5

13.4

7.2

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

pF

pF

pF

nC

nC

nC

nC

ns

ns

ns

ns

= -50V, V

V

DS

F = 1MHz

= -6V

V

GS

= -10V

V

GS

V

= -50V, V

DD

= -1A, RG ≅ 6Ω

I

D

GS

GS

= 0V

= -50V

V

DS

= -1.4A

I

D

= -10V

ZXMP10A17E6

Document Number DS32027 Rev. 6 - 2

2 of 7

www.diodes.com

January 2014

© Diodes Incorporated

ZXMP10A17E6

ADVANCE INFORMATION

ZXMP10A17E6

Document Number DS32027 Rev. 6 - 2

3 of 7

www.diodes.com

January 2014

© Diodes Incorporated