Diodes ZXMN7A11G User Manual

ZXMN7A11G 70V N-channel enhancement mode MOSFET

Summary

V

=70V : R

DSS

I

=3.8A

D

Description

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.

DS(on)

=0.13⍀

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• SOT223 package

Applications

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

• Class D audio output stages

Ordering information

Device Reel size

(inches)

Tape width

(mm)

D

G

S

Quantity per reel

ZXMN7A11GTA 7 12 1,000

ZXMN7A11GTC 13 12 4,000

Device marking

ZXMN 7A11

Issue 1 - March 2006 1 www.zetex.com

ZXMN7A11G

Absolute maximum ratings

Parameter Symbol Limit Unit

Drain-source voltage V

Gate-source voltage V

Continuous drain current @ V

@ V

Pulsed drain current

(c)

=10V; TA=25°C

GS

=10V; TA=70°C

GS

=10V; TA=25°C

GS

Continuous source current (body diode)

Pulsed source current (body diode)

Power dissipation at T

=25°C

A

(c)

(a)

(b)

(a)

Linear derating factor

Power dissipation at T

=25°C

A

(b)

Linear derating factor

Operating and storage temperature range T

I

j

P

, T

DSS

GS

I

D

DM

I

S

SM

D

stg

70 V

±20 V

3.8 A

3.0 A

2.7 A

10 A

5A

10 A

2

16

3.9 31

-55 to

W

mW/°C

W

mW/°C

°C

+150

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air

conditions. (b) For a device surface mounted on FR4 PCB measured at t (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10

temperature.

(a)

(b)

ⱕ 5 sec.

␮s - pulse width limited by maximum junction

R

⍜JA

62.5 °C/W

32 °C/W

Issue 1 - March 2006 2 www.zetex.com

Characteristics

ZXMN7A11G

Issue 1 - March 2006 3 www.zetex.com