Diodes ZXMN6A25N8 User Manual

ZXMN6A25N8
60V SO8 N-channel enhancement mode MOSFET

Summary

V

(BR)DSS

R

0.050 @ VGS=10V 7.0 60

0.070

(Ω) ID(A)

DS(on)

@ V

=4.5V

GS

Description

This new generation Trench MOSFET from
Zetex features low on-resistance and fast switching,
making it ideal for high efficiency power management applications.

Features

• Low on-resistance

• Fast switching speed

• Low gate drive

• SO8 package

Applications

• DC-DC Converters

• Power management functions

G

D

S

DS

• Disconnect switches

• Motor control

S

S

G

Ordering information

Device Reel size

(inches)

ZXMN6A25N8TA 7 12 500

Tape width

(mm)

Quantity

per reel

Device marking

ZXMN6A25

Issue 1 - April 2008 1

© Zetex Semiconductors plc 2008

Top view

www.zetex.com

D

D

D

ZXMN6A25N8

Absolute maximum ratings

Parameter Symbol Limit Unit

Drain-Source voltage

Gate-Source voltage

Continuous Drain current @ VGS= 10V; TA=25°C

@ V

@ V

@ V

Pulsed Drain current

(c)

Continuous Source current (Body diode)

Pulsed Source current (Body diode)

Power dissipation at TA =25°C

= 10V; TA=70°C

GS

= 10V; TA=25°C

GS

= 10V; TL=25°C

GS

(b)

(c)

(a)

Linear derating factor

Power dissipation at TA =25°C

(b)

Linear derating factor

Power dissipation at TL =25°C

(d)

Linear derating factor

Operating and storage temperature range

(b)

(b)

(a)

(a)(d)

V

V

DSS

GS

I

D

60

± 20

5.7

4.5

4.3

I

DM

I

S

I

SM

P

D

7.0

25.7 A

4.1 A

25.7 A

1.56

12.5

P

D

2.8

22.2

P

D

4.14

33.1

T

, T

j

stg

-55 to 150

V

V

A

W

mW/°C

W

mW/°C

W

mW/°C

°C

Thermal resistance

Parameter Symbol Value Unit

(d)

(a)

(b)

Junction to ambient

Junction to ambient

Junction to lead

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still

air conditions.
(b) Mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction

temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).

R

R

R

θJA

θJA

θJL

80

45

30.2

°C/W

°C/W

°C/W

Issue 1 - April 2008 2

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Thermal characteristics

ZXMN6A25N8

R

DS(on)

10

Limited

1

100m

10m

Drain Current (A)

1m

D

I

DC

1s

100ms

Single Pulse

T

=25°C

amb

100m 1 10

10ms

1ms

100µs

VDS Drain-Source Voltage (V)

Safe Operating Area

80

T

=25°C

70

60

50

40

30

20

10

Thermal Resistance (°C/W)

amb

D=0.5

D=0.2

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 20406080100120140160

Max Power Dissipation (W)

Temperature (°C)

25mm x 25mm

1oz FR4

Derating Curve

Single Pulse

T

=25°C

100

10

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

amb

Pulse Width (s)

Pulse Power Dissipation

Issue 1 - April 2008 3

© Zetex Semiconductors plc 2008

www.zetex.com