Diodes ZXMN6A25DN8 User Manual
ZXMN6A25DN8
Dual 60V SO8 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
DS(on)
0.050 @ V
0.070 @ V
()I
= 10V 5
GS
= 4.5V 4.2
GS
D
(A)
Description
This new generation trench MOSFET from Zetex
features a unique structure combining the benefits of
low on-resistance and fast switching, making it ideal
for high efficiency power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low profile SO8 package
G1
D1
S1
D2
G2
S2
Applications
•DC - DC converters
• Power management functions
• Motor control
Ordering information
Device Reel
(inches)
ZXMN6A25DN8TA 7 12 500
ZXMN6A25DN8TC 13 12 2500
Tape width
(mm)
Quantity
per reel
G1
S2
G2
Pin out - top view
D1S1
D1
D2
D2
Device marking
ZXMN
6A25D
Issue 4 - November 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXMN6A25DN8
Absolute maximum ratings
Parameter Symbol Limit Unit
Drain-source voltage V
Gate-source voltage V
Continuous drain current @V
Pulsed drain current
(c)
@V
@V
=10V; T
GS
=10V; T
GS
=10V; T
GS
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
amb
=25°C
(c)
(a) (d)
amb
amb
amb
(b)
=25°C
=70°C
=25°C
(b) (d)
(b) (d)
(a) (d)
DSS
I
I
DM
I
I
SM
P
GS
D
S
D
60 V
20 V
5A
4A
3.8 A
24 A
3.4 A
24 A
1.25 W
Linear derating factor 10 mW/°C
Power dissipation at T
amb
=25°C
(a) (e)
P
D
1.8 W
Linear derating factor 14 mW/°C
Power dissipation at T
amb
=25°C
(b) (d)
P
D
2.1 W
Linear derating factor 17 mW/°C
Operating and storage temperature range T
j:Tstg
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
Junction to ambient
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(a) (d)
(a) (e)
(b) (d)
10 sec.
R
R
R
JA
JA
JA
100 °C/W
70 °C/W
60 °C/W
s - pulse width limited by maximum junction
Issue 4 - November 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Typical characteristics
ZXMN6A25DN8
Issue 4 - November 2006 3 www.zetex.com
© Zetex Semiconductors plc 2006
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